Recessed metal liner contact with copper fill P Adusumilli, VS Basker, H Bu, Z Liu US Patent 9,496,225, 2016 | 312 | 2016 |
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 177 | 2016 |
Future on-chip interconnect metallization and electromigration CK Hu, J Kelly, H Huang, K Motoyama, H Shobha, Y Ostrovski, JHC Chen, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 4F. 1-1-4F. 1-6, 2018 | 69 | 2018 |
Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 59 | 2016 |
Confined PCM-based Analog Synaptic Devices offering Low Resistance-drift and 1000 Programmable States for Deep Learning W Kim, RL Bruce, T Masuda, GW Fraczak, N Gong, P Adusumilli, ... 2019 Symposium on VLSI Technology, T66-T67, 2019 | 57 | 2019 |
Experimental study of nanoscale Co damascene BEOL interconnect structures J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 53 | 2016 |
Atom-probe tomography of semiconductor materials and device structures LJ Lauhon, P Adusumilli, P Ronsheim, PL Flaitz, D Lawrence MRS bulletin 34 (10), 738-743, 2009 | 53 | 2009 |
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires CK Hu, J Kelly, JHC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 47 | 2017 |
Low resistivity wrap-around contacts P Adusumilli, AV Carr, A Reznicek, O van der Straten US Patent 10,074,727, 2018 | 45 | 2018 |
High performance middle of line interconnects P Adusumilli, A Reznicek, O van der Straten, CC Yang US Patent 20170278747A1, 2016 | 41 | 2016 |
FinFET performance with Si: P and Ge: Group-III-metal metastable contact trench alloys O Gluschenkov, Z Liu, H Niimi, S Mochizuki, J Fronheiser, X Miao, J Li, ... 2016 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2016 | 40 | 2016 |
Contacts in Advanced CMOS: History and Emerging Challenges C Lavoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, N Breil, ... ECS Transactions 77 (5), 59-79, 2017 | 38 | 2017 |
ECS Meeting Abstracts AR LaVoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, ... | 38* | |
Bulk magnetic properties of CdFe2O4 in nano-regime R Desai, RV Mehta, RV Upadhyay, A Gupta, A Praneet, KV Rao Bulletin of Materials Science 30 (3), 197-204, 2007 | 36 | 2007 |
Impact of heater configuration on Reset characteristics of PCM Mushroom cell A Chandra, P Oldiges, CT Chen, TM Philip, P Adusumilli, M BrightSky 2019 IEEE Albany Nanotechnology Symposium (ANS), 1-6, 2019 | 30* | 2019 |
Three-dimensional atomic-scale mapping of Pd in thin films YC Kim, P Adusumilli, LJ Lauhon, DN Seidman, SY Jung, HD Lee, ... Applied Physics Letters 91 (11), 113106, 2007 | 30 | 2007 |
Ti and NiPt/Ti liner silicide contacts for advanced technologies P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 29 | 2016 |
Dual metal interconnect structure P Adusumilli, H Jagannathan, K Motoyama, O van der Straten US Patent 9741812B1, 2017 | 25* | 2017 |
Field-effect transistor device having a metal gate stack with an oxygen barrier layer P Adusumilli, A Callegari, JB Chang, C Choi, MM Frank, MA Guillorn, ... US Patent 8,415,677, 2013 | 25 | 2013 |
Metal cap protection layer for gate and contact metallization P Adusumilli, H Jagannathan, A Reznicek, O van der Straten, CC Yang US Patent App. 14/852,459, 2017 | 24 | 2017 |