关注
Mohammed M. El-Banna
Mohammed M. El-Banna
Professor of Eng. Physics and Nanoelectronics, FE, ASU, Cairo, Egypt
在 eng.asu.edu.eg 的电子邮件经过验证
标题
引用次数
引用次数
年份
Influence of Drain Doping Engineering on the Ambipolar Conduction and High-Frequency Performance of TFETs
A Shaker, M El Sabbagh, MM El-Banna
IEEE Transactions on Electron Devices 64 (9), 3541-3547, 2017
862017
Physically based analytical model of heavily doped silicon wafers based proposed solar cell microstructure
MS Salem, AJ Alzahrani, RA Ramadan, A Alanazi, A Shaker, ...
IEEE Access 8, 138898-138906, 2020
402020
Toward Quantum FinFET
W Han, ZM Wang
Springer, 2013
332013
Impact of nonuniform gate oxide shape on TFET performance: A reliability issue
A Shaker, M ElSabbagh, MM El-Banna
Physica E: Low-dimensional Systems and Nanostructures 106, 346-351, 2019
232019
Photon-spin coherent manipulation of piezotronic nanodevice
AS Abdelrazek, MM El-banna, AH Phillips
Micro & Nano Letters 11 (12), 876-880, 2016
102016
Full electrothermal physically-based modeling of the power diode using PSPICE
A Shaker, M Abouelatta, M El-Banna, M Ossaimee, A Zekry
Solid-State Electronics 116, 70-79, 2016
82016
Ferromagnetic silicene superlattice based thermoelectric flexible renewable energy generator device
MM El-Banna, AH Phillips, ASA Bayoumi
IEEE Access 9, 103564-103572, 2021
72021
Spin-valley thermoelectric characteristics of ferromagnetic silicene superlattice
MM El-Banna, AH Phillips, ASA Bayoumi
Ain Shams Engineering Journal 12 (2), 2193-2203, 2021
72021
Modeling and simulation of photovoltaic module for space applications using Simulink/MATLAB
KA Morsy, MA Abouelatta, MM El-Banna, MK Elsaid
2018 First International Workshop on Deep and Representation Learning (IWDRL …, 2018
72018
TCAD simulation of a proposed 3D CdZnTe detector
AA Ellakany, M Abouelatta, A Shaker, GT Sayah, M El-Banna
The Journal of Engineering 2017 (10), 574-576, 2017
62017
Identification of power PIN diode design parameters: Circuit and device-based simulation approach
A Shaker, MS Salem, A Zekry, M El-Banna, GT Sayah, M Abouelatta
Ain Shams Engineering Journal 12 (3), 3141-3155, 2021
52021
A modified pseudo 2D physically-based model for double-gate TFETs: Role of precise calculations of drain and source depletion regions
Y Yahia, MS Salem, A Shaker, H Kamel, M Abouelatta, M ElBanna
Ain Shams Engineering Journal 13 (1), 101539, 2022
42022
Partial-coupled mode space for quantum transport simulation in nanoscale double-gate MOSFETs
MM El-Banna, YM Sabry, W Fikry, OA Omar
2010 International Conference on Microelectronics, 303-306, 2010
42010
Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance
A Salah, A Shaker, M El-Banna, M Ossaimee
Semiconductor Science and Technology 36 (7), 075012, 2021
32021
Coherent Manipulation of Spin Thermoelectric Dynamics in Graphene Nanodevice
AS Abdelrazek, MM El-banna, AH Phillips
American Journal of Modern Physics and Application 2 (4), 67-75, 2015
32015
Impact of gate misalignment on the performance of CNTFET: TFET vs MOSFET
A Salah, M El Banna, A Shaker, M Ossaimee
Alexandria Engineering Journal 64, 131-139, 2023
22023
Piezoelectric effect on spin transport characteristics of ferromagnet/semiconductor junction
AS Abdelrazek, MM El-Banna, AH Phillips
Open Science J. of Modern Physics 2 (5), 72-79, 2015
22015
Simulation of Quantum Ballistic Transport in FinFETs
YM Sabry, MM El-Banna, TM Abdolkader, W Fikry
Toward Quantum FinFET, 1-24, 2013
22013
Role of Quasi-Fermi potential in modeling III-V TFETs: InAs as a case study
A Shaker, I Sayed, M Abouelatta, W Fikry, SM Salem, M El-Banna
Ain Shams Engineering Journal 14 (7), 102007, 2023
12023
Performance Improvement of npn Solar Cell Microstructure by TCAD Simulation: Role of Emitter Contact and ARC
MS Salem, A Zekry, A Shaker, M Abouelatta, TS Almurayziq, ...
Energies 15 (19), 7179, 2022
12022
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