Parametric investigation and trap sensitivity of npn double gate TFETs D Deb, R Goswami, RK Baruah, K Kandpal, R Saha Computers and Electrical Engineering 100, 107930, 2022 | 15 | 2022 |
An SOI npn double gate TFET for low power applications D Deb, R Goswami, RK Baruah, K Kandpal, R Saha 2021 Devices for Integrated Circuit (DevIC), 621-623, 2021 | 8 | 2021 |
Junctionless tunnel FET for high-temperature applications from an analog design perspective S Routh, D Deb, RK Baruah, R Goswami 2022 IEEE International Conference on Nanoelectronics, Nanophotonics …, 2022 | 6 | 2022 |
Impact of high-temperature and interface traps on performance of a junctionless tunnel FET S Routh, D Deb, RK Baruah, R Goswami Silicon 15 (6), 2703-2714, 2023 | 5 | 2023 |
Fin core dimensionality and corner effect in dual core gate-all-around FinFET PS Das, D Deb, R Goswami, S Sharma, R Saha Microelectronics Journal 143, 105985, 2024 | 4 | 2024 |
Role of gate electrode in influencing interface trap sensitivity in SOI tunnel FETs D Deb, R Goswami, RK Baruah, R Saha, K Kandpal Journal of Micromechanics and Microengineering 32 (4), 044006, 2022 | 4 | 2022 |
A dual core source/drain GAA FinFET PS Das, D Deb, R Goswami, S Sharma, R Saha, H Choudhury Revista Tecnología en Marcha, ág 5-11, 2023 | 3 | 2023 |
Model for predicting the threshold voltage of tunnel field-effect transistors using linear regression V Kumar, MK Parida, R Goswami, D Deb Journal of Electronic Materials 50, 6015-6019, 2021 | 3 | 2021 |
Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors P Pathak, D Deb, D Nath, PS Das, H Choudhury, R Goswami Journal of Electronic Materials 53 (3), 1142-1160, 2024 | 1 | 2024 |
Random Telegraph Noise Due to Dielectric-Semiconductor Interface Traps in MOS Transistors D Deb, R Goswami, RK Baruah IEEE Transactions on Dielectrics and Electrical Insulation, 2024 | | 2024 |
Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs PS Das, D Nath, D Deb, P Pathak, H Choudhury, R Goswami Microsystem Technologies, 1-13, 2024 | | 2024 |
Flatband voltage in MOS structures for spatial fixed oxide charge distributions P Hazarika, M Ray, A Hazarika, D Deb, PS Das, H Choudhury, ... Journal of Materials Science: Materials in Electronics 34 (15), 1242, 2023 | | 2023 |
Impact of Doping and Temperature on Mobility in Single and Dual Core S/D GAA FinFETs D Nath, D Deb, PS Das, H Choudhury, P Pathak, R Goswami 2023 IEEE Devices for Integrated Circuit (DevIC), 392-395, 2023 | | 2023 |
A Single Memristor-based TTL NOT logic H Choudhury, S Paul, D Deb, PS Das, R Goswami Tecnología en Marcha 36 (2), 88-94, 2023 | | 2023 |