New types of dose distributions for vertical sidewall minimizing total dose in 3-D electron-beam proximity effect correction of nanoscale features Q Dai, SY Lee, SH Lee, BG Kim, HK Cho Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2012 | 24 | 2012 |
A fast path-based method for 3-D resist development simulation Q Dai, R Guo, SY Lee, J Choi, SH Lee, IK Shin, CU Jeon, BG Kim, ... Microelectronic engineering 127, 86-96, 2014 | 23 | 2014 |
Three-dimensional proximity effect correction for large-scale uniform patterns Q Dai, SY Lee, SH Lee, BG Kim, HK Cho Journal of Vacuum Science & Technology B 29 (6), 2011 | 22 | 2011 |
Estimation of resist profile for line/space patterns using layer-based exposure modeling in electron-beam lithography Q Dai, SY Lee, SH Lee, BG Kim, HK Cho Microelectronic engineering 88 (6), 902-908, 2011 | 21 | 2011 |
Experiment-based estimation of point spread function in electron-beam lithography: Forward-scattering part Q Dai, SY Lee, SH Lee, BG Kim, HK Cho Microelectronic engineering 88 (10), 3054-3061, 2011 | 13 | 2011 |
Enhancement of spatial resolution in generating point spread functions by Monte Carlo simulation in electron-beam lithography SY Lee, Q Dai, SH Lee, BG Kim, HK Cho Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2011 | 11 | 2011 |
Methods of estimating point spread functions in electron-beam lithography processes SH Lee, B Kim, HB Kim, SY Lee, Q Dai US Patent App. 13/486,064, 2012 | 5 | 2012 |
Determination and analysis of minimum dose for achieving vertical sidewall in electron-beam lithography X Zhao, Q Dai, SY Lee, J Choi, SH Lee, IK Shin, CU Jeon Journal of Vacuum Science & Technology B 32 (6), 2014 | 4 | 2014 |