| Reliability study of phase-change nonvolatile memories A Pirovano, A Redaelli, F Pellizzer, F Ottogalli, M Tosi, D Ielmini, ... IEEE Transactions on Device and Materials Reliability 4 (3), 422-427, 2004 | 505 | 2004 |
| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 375 | 2022 |
| Electronic switching effect and phase-change transition in chalcogenide materials A Redaelli, A Pirovano, F Pellizzer, AL Lacaita, D Ielmini, R Bez IEEE Electron Device Letters 25 (10), 684-686, 2004 | 362 | 2004 |
| Electrothermal and phase-change dynamics in chalcogenide-based memories AL Lacaita, A Redaelli, D Ielmini, F Pellizzer, A Pirovano, A Benvenuti, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 334 | 2004 |
| Threshold switching and phase transition numerical models for phase change memory simulations A Redaelli, A Pirovano, A Benvenuti, AL Lacaita Journal of Applied Physics 103 (11), 2008 | 268 | 2008 |
| Modeling of programming and read performance in phase-change memories—Part I: Cell optimization and scaling U Russo, D Ielmini, A Redaelli, AL Lacaita IEEE transactions on electron devices 55 (2), 506-514, 2008 | 147 | 2008 |
| Statistics of resistance drift due to structural relaxation in phase-change memory arrays M Boniardi, D Ielmini, S Lavizzari, AL Lacaita, A Redaelli, A Pirovano IEEE Transactions on Electron Devices 57 (10), 2690-2696, 2010 | 106 | 2010 |
| Intrinsic data retention in nanoscaled phase-change memories—Part I: Monte Carlo model for crystallization and percolation U Russo, D Ielmini, A Redaelli, AL Lacaita IEEE transactions on electron devices 53 (12), 3032-3039, 2006 | 104 | 2006 |
| A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 M Boniardi, A Redaelli, A Pirovano, I Tortorelli, D Ielmini, F Pellizzer Journal of Applied Physics 105 (8), 2009 | 98 | 2009 |
| The race of phase change memories to nanoscale storage and applications AL Lacaita, A Redaelli Microelectronic engineering 109, 351-356, 2013 | 89 | 2013 |
| Intrinsic data retention in nanoscaled phase-change memories—Part II: Statistical analysis and prediction of failure time A Redaelli, D Ielmini, U Russo, AL Lacaita IEEE transactions on electron devices 53 (12), 3040-3046, 2006 | 81 | 2006 |
| Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices B Casarin, A Caretta, J Momand, BJ Kooi, MA Verheijen, V Bragaglia, ... Scientific reports 6 (1), 22353, 2016 | 73 | 2016 |
| A phase change memory compact model for multilevel applications D Ventrice, P Fantini, A Redaelli, A Pirovano, A Benvenuti, F Pellizzer IEEE Electron Device Letters 28 (11), 973-975, 2007 | 73 | 2007 |
| Phase Change Memory A Redaelli, Redaelli, Lekhwani Springer, 2017 | 67 | 2017 |
| Optimization metrics for phase change memory (PCM) cell architectures M Boniardi, A Redaelli, C Cupeta, F Pellizzer, L Crespi, G D'Arrigo, ... 2014 IEEE International Electron Devices Meeting, 29.1. 1-29.1. 4, 2014 | 66 | 2014 |
| Self-selecting PCM device not requiring a dedicated selector transistor A Redaelli, A Pirovano US Patent 8,847,186, 2014 | 66 | 2014 |
| Phase change memory cell with self-aligned vertical heater A Pirovano, G Servalli, F Pellizzer, A Redaelli US Patent App. 12/481,496, 2010 | 66 | 2010 |
| Memory including a selector switch on a variable resistance memory cell A Redaelli, A Pirovano US Patent 9,196,355, 2015 | 64 | 2015 |
| Modeling of programming and read performance in phase-change memories—Part II: Program disturb and mixed-scaling approach U Russo, D Ielmini, A Redaelli, AL Lacaita IEEE Transactions on Electron Devices 55 (2), 515-522, 2008 | 64 | 2008 |
| Experimental investigation of transport properties in chalcogenide materials through 1∕ f noise measurements P Fantini, A Pirovano, D Ventrice, A Redaelli Applied physics letters 88 (26), 2006 | 63 | 2006 |
Agostino PirovanoMicron在 micron.com 的电子邮件经过验证
