| Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices H Abbas, A Ali, J Jung, Q Hu, MR Park, HH Lee, TS Yoon, CJ Kang Applied Physics Letters 114 (9), 2019 | 68 | 2019 |
| NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode M Hussain, SHA Jaffery, A Ali, CD Nguyen, S Aftab, M Riaz, S Abbas, ... Scientific reports 11 (1), 3688, 2021 | 47 | 2021 |
| Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection M Hussain, S Aftab, SHA Jaffery, A Ali, S Hussain, DN Cong, R Akhtar, ... Scientific Reports 10 (1), 9374, 2020 | 44 | 2020 |
| Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices A Ali, Y Abbas, H Abbas, YR Jeon, S Hussain, BA Naqvi, C Choi, J Jung Applied Surface Science 525, 146390, 2020 | 39 | 2020 |
| A vertical WSe 2–MoSe 2 p–n heterostructure with tunable gate rectification H Liu, S Hussain, A Ali, BA Naqvi, D Vikraman, W Jeong, W Song, KS An, ... RSC advances 8 (45), 25514-25518, 2018 | 32 | 2018 |
| Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses A Ali, H Abbas, M Hussain, SHA Jaffery, S Hussain, C Choi, J Jung Nano Research, 1-15, 2022 | 30 | 2022 |
| Thickness‐Dependent, Gate‐Tunable Rectification and Highly Sensitive Photovoltaic Behavior of Heterostructured GeSe/WS2 p–n Diode SHA Jaffery, J Kim, G Dastgeer, M Hussain, A Ali, S Hussain, J Eom, ... Advanced Materials Interfaces 7 (23), 2000893, 2020 | 30 | 2020 |
| First-principles calculations to investigate electronic, optical, and thermoelectric properties of Na2GeX3 (X= S, Se, Te) for energy applications Z Abbas, K Fatima, I Gorczyca, SHA Jaffery, A Ali, M Irfan, HH Raza, ... Materials Science in Semiconductor Processing 154, 107206, 2023 | 28 | 2023 |
| Characteristics of Mo2C-CNTs hybrid blended hole transport layer in the perovskite solar cells and X-ray detectors S Hussain, H Liu, D Vikraman, M Hussain, SHA Jaffery, A Ali, HS Kim, ... Journal of Alloys and Compounds 885, 161039, 2021 | 27 | 2021 |
| Versatile GeS-based CBRAM with compliance-current-controlled threshold and bipolar resistive switching for electronic synapses A Ali, H Abbas, M Hussain, SHA Jaffery, S Hussain, C Choi, J Jung Applied Materials Today 29, 101554, 2022 | 16 | 2022 |
| Near‐Direct Band Alignment of MoTe2/ReSe2 Type‐II p‐n Heterojunction for Efficient VNIR Photodetection SHA Jaffery, G Dastgeer, M Hussain, A Ali, S Hussain, M Ali, J Jung Advanced Materials Technologies 7 (10), 2200026, 2022 | 16 | 2022 |
| Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era J Li, H Abbas, DS Ang, A Ali, X Ju Nanoscale horizons, 2023 | 15 | 2023 |
| Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping M Hussain, A Ali, SHA Jaffery, S Aftab, S Abbas, M Riaz, TPA Bach, ... Nanoscale 14 (30), 10910-10917, 2022 | 11 | 2022 |
| Schottky barrier height modulation and photoconductivity in a vertical graphene/ReSe2 vdW pn heterojunction barristor TPA Bach, SHA Jaffery, DC Nguyen, A Ali, S Hussain, M Hussain, Y Seo, ... Journal of Materials Research and Technology 17, 2796-2806, 2022 | 10 | 2022 |
| Investigation of junction-less tunneling field effect transistor (JL-TFET) with floating gate A Ali, D Seo, IH Cho JSTS: Journal of Semiconductor Technology and Science 17 (1), 156-161, 2017 | 9 | 2017 |
| Forming-Free, Self-Compliance WTe2-Based Conductive Bridge RAM With Highly Uniform Multilevel Switching for High-Density Memory H Abbas, A Ali, J Li, TT Te Tun, DS Ang IEEE Electron Device Letters 44 (2), 253-256, 2022 | 7 | 2022 |
| Highly Fast Response of Pd/Ta2O5/SiC and Pd/Ta2O5/Si Schottky Diode-Based Hydrogen Sensors M Hussain, W Jeong, IS Kang, KK Choi, SHA Jaffery, A Ali, T Hussain, ... Sensors 21 (4), 1042, 2021 | 6 | 2021 |
| Analysis of the current path for a vertical NAND flash cell with program/erase states D Kang, H Kim, A Ali, Y Yoon, IH Cho Semiconductor Science and Technology 31 (3), 035011, 2016 | 5 | 2016 |
| Correction: A vertical WSe 2–MoSe 2 p–n heterostructure with tunable gate rectification H Liu, S Hussain, A Ali, BA Naqvi, D Vikraman, W Jeong, W Song, KS An, ... RSC advances 8 (50), 28692-28692, 2018 | 3 | 2018 |
| Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction A Ali, SY Kim, M Hussain, SHA Jaffery, G Dastgeer, S Hussain, BTP Anh, ... Nanomaterials 11 (11), 3003, 2021 | 2 | 2021 |
Jongwan JungSejong university在 sejong.ac.kr 的电子邮件经过验证
