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Farzan Gity
Farzan Gity
Senior Research Scientist, Tyndall National Institute, University College Cork
在 tyndall.ie 的电子邮件经过验证 - 首页
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引用次数
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年份
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 2016
1752016
Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes
C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ...
Nano letters 18 (3), 1794-1800, 2018
1742018
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
802019
Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors
A Grillo, E Faella, A Pelella, F Giubileo, L Ansari, F Gity, PK Hurley, ...
Advanced Functional Materials 31 (43), 2105722, 2021
652021
Insights into Multilevel Resistive Switching in Monolayer MoS2
S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ...
ACS Applied Materials & Interfaces 12 (5), 6022-6029, 2020
652020
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current
M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...
IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014
542014
Rhenium-doped MoS2 films
T Hallam, S Monaghan, F Gity, L Ansari, M Schmidt, C Downing, ...
Applied Physics Letters 111 (20), 2017
522017
Influence of heat treatment on H2S gas sensing features of NiO thin films deposited via thermal evaporation technique
D Dastan, A Jafari, T Marszalek, MKA Mohammed, L Tao, Z Shi, Y Chen, ...
Materials Science in Semiconductor Processing 154, 107232, 2023
462023
Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation
F Gity, K Yeol Byun, KH Lee, K Cherkaoui, JM Hayes, AP Morrison, ...
Applied Physics Letters 100 (9), 2012
402012
Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films
F Gity, L Ansari, M Lanius, P Schüffelgen, G Mussler, D Grützmacher, ...
Applied physics letters 110 (9), 2017
392017
Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering
D Dastan, K Shan, A Jafari, F Gity, XT Yin, Z Shi, ND Alharbi, BA Reshi, ...
Applied Physics A 128 (5), 400, 2022
362022
Growth of 1T′ MoTe2 by Thermally Assisted Conversion of Electrodeposited Tellurium Films
JB Mc Manus, G Cunningham, N McEvoy, CP Cullen, F Gity, M Schmidt, ...
ACS Applied Energy Materials 2 (1), 521-530, 2018
352018
Imaging and identification of point defects in PtTe2
K Zhussupbekov, L Ansari, JB McManus, A Zhussupbekova, IV Shvets, ...
npj 2D Materials and Applications 5 (1), 14, 2021
322021
Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures
M Prechtl, S Parhizkar, O Hartwig, K Lee, J Biba, T Stimpel‐Lindner, F Gity, ...
Advanced Functional Materials, 2103936, 2021
312021
Isotropic conduction and negative photoconduction in ultrathin PtSe2 films
F Urban, F Gity, PK Hurley, N McEvoy, A Di Bartolomeo
Applied Physics Letters 117 (19), 2020
292020
Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding
F Gity, A Daly, B Snyder, FH Peters, J Hayes, C Colinge, AP Morrison, ...
Optics Express 21 (14), 17309-17314, 2013
282013
Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers
N Liu, A Gocalinska, J Justice, F Gity, I Povey, B McCarthy, M Pemble, ...
Nano letters 16 (12), 7822-7828, 2016
242016
Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation
KY Byun, P Fleming, N Bennett, F Gity, P McNally, M Morris, I Ferain, ...
Journal of Applied Physics 109 (12), 2011
242011
Modeling the effects of interface traps on the static and dynamic characteristics of Ge/Si avalanche photodiodes
F Gity, JM Hayes, B Corbett, AP Morrison
IEEE Journal of Quantum Electronics 47 (6), 849-857, 2011
242011
Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers
GA Verni, B Long, F Gity, M Lanius, P Schüffelgen, G Mussler, ...
RSC Advances 8 (58), 33368-33373, 2018
232018
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