Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2 G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ... Journal of Applied Physics 120 (12), 2016 | 175 | 2016 |
Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ... Nano letters 18 (3), 1794-1800, 2018 | 174 | 2018 |
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ... npj 2D Materials and Applications 3 (1), 33, 2019 | 80 | 2019 |
Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe2 Field‐Effect Transistors A Grillo, E Faella, A Pelella, F Giubileo, L Ansari, F Gity, PK Hurley, ... Advanced Functional Materials 31 (43), 2105722, 2021 | 65 | 2021 |
Insights into Multilevel Resistive Switching in Monolayer MoS2 S Bhattacharjee, E Caruso, N McEvoy, C Ó Coileáin, K O’Neill, L Ansari, ... ACS Applied Materials & Interfaces 12 (5), 6022-6029, 2020 | 65 | 2020 |
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ... IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014 | 54 | 2014 |
Rhenium-doped MoS2 films T Hallam, S Monaghan, F Gity, L Ansari, M Schmidt, C Downing, ... Applied Physics Letters 111 (20), 2017 | 52 | 2017 |
Influence of heat treatment on H2S gas sensing features of NiO thin films deposited via thermal evaporation technique D Dastan, A Jafari, T Marszalek, MKA Mohammed, L Tao, Z Shi, Y Chen, ... Materials Science in Semiconductor Processing 154, 107232, 2023 | 46 | 2023 |
Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation F Gity, K Yeol Byun, KH Lee, K Cherkaoui, JM Hayes, AP Morrison, ... Applied Physics Letters 100 (9), 2012 | 40 | 2012 |
Reinventing solid state electronics: Harnessing quantum confinement in bismuth thin films F Gity, L Ansari, M Lanius, P Schüffelgen, G Mussler, D Grützmacher, ... Applied physics letters 110 (9), 2017 | 39 | 2017 |
Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering D Dastan, K Shan, A Jafari, F Gity, XT Yin, Z Shi, ND Alharbi, BA Reshi, ... Applied Physics A 128 (5), 400, 2022 | 36 | 2022 |
Growth of 1T′ MoTe2 by Thermally Assisted Conversion of Electrodeposited Tellurium Films JB Mc Manus, G Cunningham, N McEvoy, CP Cullen, F Gity, M Schmidt, ... ACS Applied Energy Materials 2 (1), 521-530, 2018 | 35 | 2018 |
Imaging and identification of point defects in PtTe2 K Zhussupbekov, L Ansari, JB McManus, A Zhussupbekova, IV Shvets, ... npj 2D Materials and Applications 5 (1), 14, 2021 | 32 | 2021 |
Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures M Prechtl, S Parhizkar, O Hartwig, K Lee, J Biba, T Stimpel‐Lindner, F Gity, ... Advanced Functional Materials, 2103936, 2021 | 31 | 2021 |
Isotropic conduction and negative photoconduction in ultrathin PtSe2 films F Urban, F Gity, PK Hurley, N McEvoy, A Di Bartolomeo Applied Physics Letters 117 (19), 2020 | 29 | 2020 |
Ge/Si heterojunction photodiodes fabricated by low temperature wafer bonding F Gity, A Daly, B Snyder, FH Peters, J Hayes, C Colinge, AP Morrison, ... Optics Express 21 (14), 17309-17314, 2013 | 28 | 2013 |
Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers N Liu, A Gocalinska, J Justice, F Gity, I Povey, B McCarthy, M Pemble, ... Nano letters 16 (12), 7822-7828, 2016 | 24 | 2016 |
Comprehensive investigation of Ge–Si bonded interfaces using oxygen radical activation KY Byun, P Fleming, N Bennett, F Gity, P McNally, M Morris, I Ferain, ... Journal of Applied Physics 109 (12), 2011 | 24 | 2011 |
Modeling the effects of interface traps on the static and dynamic characteristics of Ge/Si avalanche photodiodes F Gity, JM Hayes, B Corbett, AP Morrison IEEE Journal of Quantum Electronics 47 (6), 849-857, 2011 | 24 | 2011 |
Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers GA Verni, B Long, F Gity, M Lanius, P Schüffelgen, G Mussler, ... RSC Advances 8 (58), 33368-33373, 2018 | 23 | 2018 |