| 22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL S Narasimha, P Chang, C Ortolland, D Fried, E Engbrecht, K Nummy, ... 2012 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2012 | 104 | 2012 |
| Surface modification of poly (dimethylsiloxane) for microfluidic assay applications C Seguin, JM McLachlan, PR Norton, F Lagugné-Labarthet Applied Surface Science 256 (8), 2524-2531, 2010 | 71 | 2010 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 65 | 2017 |
| A novel metal-protected plasma treatment for the robust bonding of polydimethylsiloxane N Patrito, JM McLachlan, SN Faria, J Chan, PR Norton Lab on a Chip 7 (12), 1813-1818, 2007 | 37 | 2007 |
| Single spacer for complementary metal oxide semiconductor process flow MA Bergendahl, K Cheng, J Dechene, FL Lie, ER Miller, JC Shearer, ... US Patent 9,450,095, 2016 | 13 | 2016 |
| Surface modifications of poly (dimethylsiloxane) for biological application of microfluidic devices JM Dechene The University of Western Ontario (Canada), 2010 | 12 | 2010 |
| Ligand effects on the size and purity of Pd nanoparticles M Iqbal, J McLachlan, W Jia, N Braidy, G Botton, S Eichhorn Journal of thermal analysis and calorimetry 96 (1), 15-20, 2009 | 10 | 2009 |
| Titanium silicide/titanium nitride full metal gates for dual-channel gate-first CMOS MM Frank, C Cabral, JM Dechene, C Ortolland, Y Zhu, ED Marshall, ... IEEE Electron Device Letters 37 (2), 150-153, 2015 | 9 | 2015 |
| Positionally controlled growth of cells using a cytophobic fluorinated polymer S Varma, J McLachlan, AM Leclair, BC Galarreta, PR Norton, ... Analytical and bioanalytical chemistry 396, 1159-1165, 2010 | 9 | 2010 |
| Contact level patterning challenges for sub 22-nm architecture J Shearer, J Dechene, S Kanakasabapathy, N Mohanty, B Messer, ... Proc. Am. Vacuum Soc. Int'l Symp 61, 2014 | 8 | 2014 |
| Characterization of Au and Pd nanoparticles by high-temperature TGA–MS W Jia, J McLachlan, J Xu, SM Tadayyon, PR Norton, SH Eichhorn Canadian journal of chemistry 84 (7), 998-1005, 2006 | 8 | 2006 |
| Selective recessing to form a fully aligned via BD Briggs, J Dechene, EE Huang, J Lee, TE Standaert US Patent 10,636,706, 2020 | 7 | 2020 |
| Selective recessing to form a fully aligned via BD Briggs, J Dechene, EE Huang, J Lee, TE Standaert US Patent 10,832,952, 2020 | 6 | 2020 |
| Isolation structures of finfet semiconductor devices H Zang, R Xie, JM Dechene US Patent App. 16/246,536, 2020 | 6 | 2020 |
| Methods, apparatus and system for replacement contact for a finFET device J Gao, D Jaeger, M Aquilino, P Carpenter, J Dechene, H Cao, ... US Patent 10,269,654, 2019 | 6 | 2019 |
| Tone inversion method and structure for selective contact via patterning X Qiu, MV Aquilino, PD Carpenter, J Dechene, MH Tang, H Huang, H Cao US Patent 10,453,751, 2019 | 5 | 2019 |
| Single diffusion cut for gate structures H Zang, R Xie, JM Dechene US Patent 11,127,623, 2021 | 4 | 2021 |
| Single spacer for complementary metal oxide semiconductor process flow MA Bergendahl, K Cheng, J Dechene, FL Lie, ER Miller, JC Shearer, ... US Patent 9,754,942, 2017 | 4 | 2017 |
| Multi-level air gap formation in dual-damascene structure RA Conti, J Dechene, SV Nguyen, JC SHEARER US Patent 10,224,239, 2019 | 3 | 2019 |
| Single spacer for complementary metal oxide semiconductor process flow MA Bergendahl, K Cheng, J Dechene, FL Lie, ER Miller, JC Shearer, ... US Patent 9,748,146, 2017 | 3 | 2017 |
