| Temperature dependence of semiconductor band gaps KP O’Donnell, X Chen Applied Physics Letters 58 (25), 2924-2926, 1991 | 1404 | 1991 |
| Origin of luminescence from InGaN diodes KP O'Donnell, RW Martin, PG Middleton Physical Review Letters 82 (1), 237, 1999 | 653 | 1999 |
| Exciton localization and the Stokes’ shift in InGaN epilayers RW Martin, PG Middleton, KP O’Donnell, W Van der Stricht Applied Physics Letters 74 (2), 263-265, 1999 | 385 | 1999 |
| Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping S Pereira, MR Correia, E Pereira, KP O’Donnell, E Alves, AD Sequeira, ... Applied Physics Letters 80 (21), 3913-3915, 2002 | 282 | 2002 |
| Compositional pulling effects in InxGa1-x N/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study S Pereira, MR Correia, E Pereira, KP O’Donnell, C Trager-Cowan, ... Physical Review B 64 (20), 205311, 2001 | 276 | 2001 |
| Origin of the Stokes shift: a geometrical model of exciton spectra in 2D semiconductors F Yang, M Wilkinson, EJ Austin, KP O’Donnell Physical Review Letters 70 (3), 323, 1993 | 257 | 1993 |
| Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’Donnell Physical Review Letters 97 (8), 085501, 2006 | 185 | 2006 |
| Luminescence decay in disordered low‐dimensional semiconductors X Chen, B Henderson, KP O’Donnell Applied Physics Letters 60 (21), 2672-2674, 1992 | 171 | 1992 |
| Origin of the 0.97 eV luminescence in irradiated silicon KP O'Donnell, KM Lee, GD Watkins Physica B+ C 116 (1-3), 258-263, 1983 | 143 | 1983 |
| Disorder and the optical spectroscopy of Cr3+-doped glasses: I. Silicate glasses F Rasheed, KP O'Donnell, B Henderson, DB Hollis Journal of Physics: Condensed Matter 3 (12), 1915, 1991 | 130 | 1991 |
| Structural and optical properties of InGaN/GaN layers close to the critical layer thickness S Pereira, MR Correia, E Pereira, C Trager-Cowan, F Sweeney, ... Applied Physics Letters 81 (7), 1207-1209, 2002 | 125 | 2002 |
| Identification of the prime optical center in GaN: Eu3+ IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ... Physical Review B 81 (8), 085209, 2010 | 123 | 2010 |
| Raman-scattering study of the InGaN alloy over the whole composition range S Hernández, R Cuscó, D Pastor, L Artús, KP O'Donnell, RW Martin, ... J Appl Phys, 2005 | 121 | 2005 |
| Structural analysis of InGaN epilayers KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White Journal of Physics: Condensed Matter 13 (32), 6977, 2001 | 121 | 2001 |
| Rare-earth doped III-nitrides for optoelectronic and spintronic applications VD (Eds.)K.P. O'Donnell Springer, 2010 | 118* | 2010 |
| Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ... Applied Physics Letters 87 (11), 2005 | 112 | 2005 |
| Optical linewidths of InGaN light emitting diodes and epilayers KP O’Donnell, T Breitkopf, H Kalt, W Van der Stricht, I Moerman, ... Applied physics letters 70 (14), 1843-1845, 1997 | 100 | 1997 |
| Optical energies of AlInN epilayers K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ... Journal of Applied Physics 103 (7), 2008 | 92 | 2008 |
| Rare earth doped III-nitrides for optoelectronics KP O'Donnell, B Hourahine The European Physical Journal-Applied Physics 36 (2), 91-103, 2006 | 90 | 2006 |
| High-temperature annealing and optical activation of Eu-implanted GaN K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ... Applied physics letters 85 (14), 2712-2714, 2004 | 88 | 2004 |
Robert MartinProfessor of Physics, Strathclyde University在 strath.ac.uk 的电子邮件经过验证
