| Improved properties of the atomic layer deposited Ru electrode for dynamic random-access memory capacitor using discrete feeding method DS Kwon, W Jeon, DG Kim, TK Kim, H Seo, J Lim, CS Hwang ACS applied materials & interfaces 13 (20), 23915-23927, 2021 | 11 | 2021 |
| The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors H Seo, IW Yeu, DS Kwon, DG Kim, J Lim, TK Kim, H Paik, JH Choi, ... Advanced Electronic Materials 8 (7), 2200099, 2022 | 8 | 2022 |
| Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution J Lim, KH Ye, DS Kwon, H Seo, TK Kim, H Paik, JH Shin, H Song, ... ACS Applied Electronic Materials 5 (8), 4187-4197, 2023 | 3 | 2023 |
| Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer DS Kwon, TK Kim, J Lim, H Seo, H Paik, CS Hwang ACS Applied Electronic Materials 4 (4), 2005-2014, 2022 | 3 | 2022 |
| Understanding phase evolution of ferroelectric Hf 0.5 Zr 0.5 O 2 thin films with Al 2 O 3 and Y 2 O 3 inserted layers J Shin, H Seo, KH Ye, YH Jang, DS Kwon, J Lim, TK Kim, H Paik, H Song, ... Journal of Materials Chemistry C 12 (14), 5035-5046, 2024 | 2 | 2024 |
| Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate DG Kim, HR Kim, DS Kwon, J Lim, H Seo, TK Kim, H Paik, W Lee, ... Journal of Physics D: Applied Physics 54 (18), 185110, 2021 | 2 | 2021 |
| Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates DG Kim, DS Kwon, J Lim, H Seo, TK Kim, W Lee, CS Hwang Advanced Electronic Materials 7 (2), 2000819, 2021 | 2 | 2021 |
| Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping … J Lim, DS Kwon, H Seo, TK Kim, H Paik, J Shin, H Song, YH Jang, Y Park, ... ACS Applied Electronic Materials 5 (8), 4494-4503, 2023 | 1 | 2023 |
| Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition BW Wang, S Kim, H Song, H Seo, X Li, JM Choi, J Choi, J Shin, ... Journal of Materials Chemistry C 10 (17), 6611-6620, 2022 | 1 | 2022 |
| Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction H Seo, HS Park, ST Cho, J Shin, J Lim, TK Kim, H Paik, H Song, ... Journal of Applied Physics 136 (1), 2024 | | 2024 |
| 2Memristor‐1Capacitor Integrated Temporal Kernel for High‐Dimensional Data Mapping SK Shim, YH Jang, J Han, JW Jeon, DH Shin, YR Kim, JK Han, KS Woo, ... Small, 2306585, 2024 | | 2024 |
| Reversible Modulation of Critical Electric Fields for Field-Induced Ferroelectric Effect with Field-Cycling in ZrO 2 Thin Films J Shin, DH Shin, K Do Kim, H Seo, KH Ye, JW Jeon, TK Kim, H Paik, ... Journal of Materials Chemistry C, 2024 | | 2024 |
| Improved electrical performance of ultra-thin Be x Mg 1− x O films using super-cycle atomic layer deposition H Song, B Wang, J Shin, YK Park, TK Kim, H Paik, H Seo, J Lim, D Kwon, ... Journal of Materials Chemistry C 12 (8), 2714-2722, 2024 | | 2024 |
| The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors (Adv … H Seo, IW Yeu, DS Kwon, DG Kim, J Lim, TK Kim, H Paik, JH Choi, ... Advanced Electronic Materials 8 (7), 2270030, 2022 | | 2022 |
