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Catherine Chevallier
Catherine Chevallier
CNRS
在 insa-lyon.fr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Duvaut, C Vannuffel, ...
Applied Physics Letters 76 (16), 2241-2243, 2000
2592000
From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ...
Journal of applied physics 95 (9), 4761-4766, 2004
1102004
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
W Chikhaoui, JM Bluet, MA Poisson, N Sarazin, C Dua, C Bru-Chevallier
Applied Physics Letters 96 (7), 2010
1072010
Growth and optical properties of GaN/AlN quantum wells
C Adelmann, E Sarigiannidou, D Jalabert, Y Hori, JL Rouviere, B Daudin, ...
Applied Physics Letters 82 (23), 4154-4156, 2003
1062003
How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy
B Daudin, G Feuillet, J Hübner, Y Samson, F Widmann, A Philippe, ...
Journal of Applied Physics 84 (4), 2295-2300, 1998
981998
Rapid thermal annealing in structures: Effect of nitrogen reorganization on optical properties
L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, ...
Journal of applied physics 91 (9), 5902-5908, 2002
862002
Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates
J Cao, D Pavlidis, A Eisenbach, A Philippe, C Bru-Chevallier, G Guillot
Applied physics letters 71 (26), 3880-3882, 1997
561997
Structural properties of undoped and doped cubic GaN grown on SiC (001)
E Martínez-Guerrero, E Bellet-Amalric, L Martinet, G Feuillet, B Daudin, ...
Journal of applied physics 91 (8), 4983-4987, 2002
462002
Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001)
B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ...
Physical Review B 66 (19), 193305, 2002
452002
Excitonic properties of wurtzite InP nanowires grown on silicon substrate
MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 24 (3), 035704, 2012
372012
Deep traps analysis in AlGaN/GaN heterostructure transistors
W Chikhaoui, JM Bluet, C Bru‐Chevallier, C Dua, R Aubry
physica status solidi c 7 (1), 92-95, 2010
342010
MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers
V Celibert, E Tranvouez, G Guillot, C Bru-Chevallier, L Grenouillet, ...
Journal of crystal growth 275 (1-2), e2313-e2319, 2005
332005
Size and shape effects on excitons and biexcitons in single InAs∕ InP quantum dots
N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry
Journal of applied physics 100 (7), 2006
322006
Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors
C Bru-Chevallier, H Chouaib, J Arcamone, T Benyattou, H Lahreche, ...
Thin Solid Films 450 (1), 151-154, 2004
302004
Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate
MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 22 (40), 405702, 2011
292011
Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
N Chauvin, MH Hadj Alouane, R Anufriev, H Khmissi, K Naji, G Patriarche, ...
Applied Physics Letters 100 (1), 2012
272012
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
N Malbert, N Labat, A Curutchet, C Sury, V Hoel, JC de Jaeger, ...
Microelectronics Reliability 49 (9-11), 1216-1221, 2009
272009
Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP (001)
E Dupuy, P Regreny, Y Robach, M Gendry, N Chauvin, E Tranvouez, ...
Applied physics letters 89 (12), 2006
262006
InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ...
Journal of Crystal Growth 344 (1), 45-50, 2012
252012
Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAs∕ InP (001) quantum dot
G Saint-Girons, N Chauvin, A Michon, G Patriarche, G Beaudoin, ...
Applied physics letters 88 (13), 2006
242006
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