| A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ... IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007 | 173 | 2007 |
| Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study D Reid, C Millar, G Roy, S Roy, A Asenov IEEE Transactions on Electron Devices 56 (10), 2255-2263, 2009 | 87 | 2009 |
| Accurate statistical description of random dopant-induced threshold voltage variability C Millar, D Reid, G Roy, S Roy, A Asenov IEEE Electron Device Letters 29 (8), 946-948, 2008 | 87 | 2008 |
| Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ... IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2014 | 72 | 2014 |
| Statistical-variability compact-modeling strategies for BSIM4 and PSP B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov IEEE Design & Test of Computers 27 (2), 26-35, 2010 | 72 | 2010 |
| Interplay between process-induced and statistical variability in 14-nm CMOS technology double-gate SOI FinFETs X Wang, B Cheng, AR Brown, C Millar, JB Kuang, S Nassif, A Asenov IEEE Transactions on Electron Devices 60 (8), 2485-2492, 2013 | 62 | 2013 |
| Understanding LER-Induced MOSFET Variability—Part I: Three-Dimensional Simulation of Large Statistical Samples D Reid, C Millar, S Roy, A Asenov IEEE Transactions on Electron Devices 57 (11), 2801-2807, 2010 | 55 | 2010 |
| Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ... 2008 IEEE International Electron Devices Meeting, 1-1, 2008 | 51 | 2008 |
| Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ... Microelectronics Reliability 54 (4), 682-697, 2014 | 49 | 2014 |
| Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ... IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017 | 44 | 2017 |
| Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs B Cheng, S Roy, AR Brown, C Millar, A Asenov Solid-State Electronics 53 (7), 767-772, 2009 | 38 | 2009 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| A survey of carbon nanotube interconnects for energy efficient integrated circuits A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ... IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017 | 35 | 2017 |
| Impact of self-heating on the statistical variability in bulk and SOI FinFETs L Wang, AR Brown, M Nedjalkov, C Alexander, B Cheng, C Millar, ... IEEE Transactions on Electron Devices 62 (7), 2106-2112, 2015 | 35 | 2015 |
| FinFET centric variability-aware compact model extraction and generation technology supporting DTCO X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015 | 33 | 2015 |
| Predictive simulation and benchmarking of Si and Ge pMOS FinFETs for future CMOS technology L Shifren, R Aitken, AR Brown, V Chandra, B Cheng, C Riddet, ... IEEE Transactions on Electron Devices 61 (7), 2271-2277, 2014 | 32 | 2014 |
| 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity L Wang, AR Brown, M Nedjalkov, C Alexander, B Cheng, C Millar, ... 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 28 | 2014 |
| Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ... IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015 | 25 | 2015 |
| Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability A Asenov, B Cheng, X Wang, AR Brown, D Reid, C Millar, C Alexander 2013 IEEE International Electron Devices Meeting, 33.1. 1-33.1. 4, 2013 | 25 | 2013 |
| Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013 | 22 | 2013 |
a asenovThe University of Glasgow在 glasgow.ac.uk 的电子邮件经过验证
