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Sindhu Ramaswamy
Sindhu Ramaswamy
GlobalFoundries, IIT Delhi
在 globalfoundries.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Doping-less tunnel field effect transistor: Design and investigation
MJ Kumar, S Janardhanan
IEEE transactions on Electron Devices 60 (10), 3285-3290, 2013
6172013
Junctionless impact ionization MOS: Proposal and investigation
S Ramaswamy, MJ Kumar
IEEE Transactions on Electron Devices 61 (12), 4295-4298, 2014
622014
Double Gate Symmetric Tunnel FET: Investigation and Analysis
S Ramaswamy, MJ Kumar
IET Circuits, Devices and Systems, 2016
262016
Raised source/drain Dopingless Junctionless Accumulation Mode FET: Design and Analysis
S Ramaswamy, MJ Kumar
IEEE Transactions on Electron Devices, 2016
212016
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