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Jean-Francois Lelièvre
Jean-Francois Lelièvre
未知所在单位机构
在 insa-lyon.fr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Pyramidal texturing of silicon solar cell with TMAH chemical anisotropic etching
P Papet, O Nichiporuk, A Kaminski, Y Rozier, J Kraiem, JF Lelievre, ...
Solar Energy Materials and Solar Cells 90 (15), 2319-2328, 2006
4082006
Study of the composition of hydrogenated silicon nitride SiNx: H for efficient surface and bulk passivation of silicon
JF Lelièvre, E Fourmond, A Kaminski, O Palais, D Ballutaud, M Lemiti
Solar Energy Materials and Solar Cells 93 (8), 1281-1289, 2009
2082009
Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation
J Dupuis, E Fourmond, JF Lelièvre, D Ballutaud, M Lemiti
Thin Solid Films 516 (20), 6954-6958, 2008
942008
Acceptable contamination levels in solar grade silicon: From feedstock to solar cell
J Hofstetter, JF Lelièvre, C Del Cañizo, A Luque
Materials Science and Engineering: B 159, 299-304, 2009
892009
Impurity‐to‐efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution
J Hofstetter, DP Fenning, MI Bertoni, JF Lelièvre, C Cañizo1, T Buonassisi
Progress in photovoltaics: Research and applications 19 (4), 487-497, 2011
622011
Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling
DP Fenning, J Hofstetter, MI Bertoni, S Hudelson, M Rinio, JF Lelievre, ...
Applied Physics Letters 98 (16), 2011
522011
About the origin of low wafer performance and crystal defect generation on seed‐cast growth of industrial mono‐like silicon ingots
I Guerrero, V Parra, T Carballo, A Black, M Miranda, D Cancillo, ...
Progress in Photovoltaics: Research and Applications 22 (8), 923-932, 2014
482014
Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells
JF Lelièvre, B Kafle, P Saint‐Cast, P Brunet, R Magnan, E Hernandez, ...
Progress in Photovoltaics: Research and Applications 27 (11), 1007-1019, 2019
472019
Elaboration de SiNx: H par PECVD: optimisation des propriétés optiques, passivantes et structurales pour applications photovoltaïques
JF Lelièvre
Institut National des Sciences Appliquées de Lyon, 2007
472007
Investigation of graded index SiOxNy antireflection coating for silicon solar cell manufacturing
M Lipiński, A Kaminski, JF Lelièvre, M Lemiti, E Fourmond, P Zięba
physica status solidi c 4 (4), 1566-1569, 2007
382007
Correlation of optical and photoluminescence properties in amorphous SiNx: H thin films deposited by PECVD or UVCVD
JF Lelievre, J De la Torre, A Kaminski, G Bremond, M Lemiti, ...
Thin Solid Films 511, 103-107, 2006
362006
Dissolution and gettering of iron during contact co-firing
JF Lelievre, J Hofstetter, A Peral, I Hoces, F Recart, C Del Cañizo
Energy Procedia 8, 257-262, 2011
352011
Atmospheric Pressure Radio‐Frequency DBD Deposition of Dense Silicon Dioxide Thin Film
R Bazinette, J Paillol, JF Lelièvre, F Massines
Plasma Processes and Polymers 13 (10), 1015-1024, 2016
282016
Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics
F Massines, J Silva, JF Lelièvre, R Bazinette, J Vallade, P Lecouvreur, ...
Plasma Processes and Polymers 13 (1), 170-183, 2016
222016
Desert label development for improved reliability and durability of photovoltaic modules in harsh desert conditions
JF Lelièvre, R Couderc, N Pinochet, L Sicot, D Munoz, R Kopecek, ...
Solar Energy Materials and Solar Cells 236, 111508, 2022
212022
Cannizo and C, Luque L 2009 Mater
J Hofstetter, JF Lelièvre
Sci. Eng. B 159, 299, 0
20
Fabrication of Si tunnel diodes for c-Si based tandem solar cells using proximity rapid thermal diffusion
A Fave, JF Lelièvre, T Gallet, Q Su, M Lemiti
Energy Procedia 124, 577-583, 2017
182017
Influence of the discharge mode on the optical and passivation properties of SiNx: H deposited by PECVD at atmospheric pressure
R Bazinette, JF Lelièvre, L Gaudy, F Massines
Energy Procedia 92, 309-316, 2016
172016
Impact of a metal–organic vapor phase epitaxy environment on silicon substrates for III–V-on-Si multijunction solar cells
E García-Tabarés, I García, JF Lelievre, I Rey-Stolle
Japanese Journal of Applied Physics 51 (10S), 10ND05, 2012
162012
Engineering metal precipitate size distributions to enhance gettering in multicrystalline silicon
J Hofstetter, DP Fenning, JF Lelièvre, C del Cañizo, T Buonassisi
physica status solidi (a) 209 (10), 1861-1865, 2012
152012
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