| High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates E Frayssinet, W Knap, P Lorenzini, N Grandjean, J Massies, ... Applied Physics Letters 77 (16), 2551-2553, 2000 | 172 | 2000 |
| GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates M Asif Khan, JW Yang, W Knap, E Frayssinet, X Hu, G Simin, P Prystawko, ... Applied Physics Letters 76 (25), 3807-3809, 2000 | 109 | 2000 |
| Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy TD Veal, PDC King, SA Hatfield, LR Bailey, CF McConville, B Martel, ... Applied Physics Letters 93 (20), 2008 | 102 | 2008 |
| Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ... MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002 | 101 | 2002 |
| Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption F Médard, J Zúñiga-Pérez, P Disseix, M Mihailovic, J Leymarie, A Vasson, ... Physical Review B—Condensed Matter and Materials Physics 79 (12), 125302, 2009 | 72 | 2009 |
| Demonstration of AlGaN/GaN high-electron-mobility transistors grown by molecular beam epitaxy on Si (110) Y Cordier, JC Moreno, N Baron, E Frayssinet, S Chenot, B Damilano, ... IEEE electron device letters 29 (11), 1187-1189, 2008 | 61 | 2008 |
| Reduction of stacking faults in (11 ̄2 0) and (11 ̄2 2) GaN films by ELO techniques and benefit on GaN wells emission Z Bougrioua, M Laügt, P Vennéguès, I Cestier, T Gühne, E Frayssinet, ... physica status solidi (a) 204 (1), 282-289, 2007 | 57 | 2007 |
| Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition HPD Schenk, E Frayssinet, A Bavard, D Rondi, Y Cordier, M Kennard Journal of crystal growth 314 (1), 85-91, 2011 | 56 | 2011 |
| Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures W Knap, E Borovitskaya, MS Shur, L Hsu, W Walukiewicz, E Frayssinet, ... Applied Physics Letters 80 (7), 1228-1230, 2002 | 56 | 2002 |
| Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature S Faure, C Brimont, T Guillet, T Bretagnon, B Gil, F Médard, D Lagarde, ... Applied Physics Letters 95 (12), 2009 | 55 | 2009 |
| Effective factor of two-dimensional electrons in GaN/AlGaN heterojunctions W Knap, E Frayssinet, ML Sadowski, C Skierbiszewski, D Maude, V Falko, ... Applied physics letters 75 (20), 3156-3158, 1999 | 55 | 1999 |
| Doping of homoepitaxial GaN layers P Prystawko, M Leszczynski, B Beaumont, P Gibart, E Frayssinet, W Knap, ... physica status solidi (b) 210 (2), 437-443, 1998 | 54 | 1998 |
| High-quality 2''bulk-like free-standing GaN grown by HydrideVapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation … D Gogova, H Larsson, A Kasic, GR Yazdi, I Ivanov, R Yakimova, ... Japanese journal of applied physics 44 (3R), 1181, 2005 | 53 | 2005 |
| GaN homoepitaxial layers grown by metalorganic chemical vapor deposition M Leszczynski, B Beaumont, E Frayssinet, W Knap, P Prystawko, T Suski, ... Applied physics letters 75 (9), 1276-1278, 1999 | 53 | 1999 |
| Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy E Frayssinet, Y Cordier, HPD Schenk, A Bavard physica status solidi c 8 (5), 1479-1482, 2011 | 52 | 2011 |
| Process for producing an epitaxial layer of gallium nitride E Frayssinet, B Beaumont, JP Faurie, P Gibart US Patent 7,118,929, 2006 | 50 | 2006 |
| Process for producing an epitalixal layer of galium nitride E Frayssinet, B Beaumont, JP Faurie, P Gibart US Patent 7,560,296, 2009 | 46 | 2009 |
| Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals E Frayssinet, W Knap, S Krukowski, P Perlin, P Wisniewski, T Suski, ... Journal of crystal growth 230 (3-4), 442-447, 2001 | 46 | 2001 |
| Response of ultra-low dislocation density GaN photodetectors in the near-and vacuum-ultraviolet JL Pau, C Rivera, E Munoz, E Calleja, U Schühle, E Frayssinet, ... Journal of applied physics 95 (12), 8275-8279, 2004 | 43 | 2004 |
| High-performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors F Giannazzo, G Greco, E Schilirò, R Lo Nigro, I Deretzis, A La Magna, ... ACS Applied Electronic Materials 1 (11), 2342-2354, 2019 | 41 | 2019 |
