| GHz class low-power flash ADC for broadband communications J Sexton, T Tauqeer, M Mohiuddin, M Missous 2008 International Conference on Advanced Semiconductor Devices and …, 2008 | 12 | 2008 |
| Elimination of current blocking in ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar transistors M Mohiuddin, T Tauqeer, J Sexton, R Knight, M Missous IEEE transactions on electron devices 57 (12), 3340-3347, 2010 | 9 | 2010 |
| Physical modelling of the Kink Effect in strained InGaAs/InAlAs pHEMTs S Arshad, M Mohiuddin, A Bouloukou, M Missous 2008 International Conference on Advanced Semiconductor Devices and …, 2008 | 6 | 2008 |
| Raman studies of delta-doped semiconductors and quantum wells YC Chang, H Yao, M Mohiuddin Journal of applied physics 85 (3), 1616-1621, 1999 | 6 | 1999 |
| Temperature studies of InAlAs–InGaAs–InAlAs double heterojunction bipolar transistors with no current blocking M Mohiuddin, T Tauqeer, J Sexton, M Missous Semiconductor science and technology 25 (7), 075002, 2010 | 4 | 2010 |
| 2-D Physical Modelling of delta-doped GaAs/AlGaAs HEMT M Mohiuddin, S Arshad, A Bouloukou, M Missous 7th International Conference on Advanced Semiconductor Devices and Microsystems, 2008 | 3 | 2008 |
| Exploring alternate trade-offs of placement quality versus runtime in simulated annealing algorithm B Raza, H Parvez, M Mohiuddin 2014 9th International Symposium on Reconfigurable and Communication-Centric …, 2014 | 2 | 2014 |
| Study of switching and Kirk effects in InALAs/InGaAs/InALAs double heterojunction bipolar transistors M Mohiuddin, J Sexton, M Missous JSTS: Journal of Semiconductor Technology and Science 13 (5), 516-521, 2013 | 1 | 2013 |
| InGaAs/InAlAs Double Heterojunction Bipolar Transistors for High-Speed, Low-Power Digital Applications M Mohiuddin PQDT-Global, 2010 | 1 | 2010 |
| 2-D Physical Modelling of 6-doped GaAs/AlGaAs HEMT M Mohiuddin, S Arshad, A Bouloukou, M Missous 2008 International Conference on Advanced Semiconductor Devices and …, 2008 | 1 | 2008 |
| Low temperature performance of pure ternary InAlAs-InGaAs-InAlAs double heterojunction bipolar microwave transistors M Mohiuddin, J Sexton, M Missous International Journal of Electronics Letters 1 (3), 134-141, 2013 | | 2013 |
| Low Power, High-Speed ADCs and digital circuits for SKA T Tauqeer, J Sexton, M Mohiuddin, M Missous Proceedings of Science 132, 313-316, 2009 | | 2009 |
| Low-power LVDS driver using InP HBT ECL circuits for SKA M Mohiuddin, T Tauqeer, J Sexton, M Missous Proceedings of Science 132, 311-312, 2009 | | 2009 |
| Plasmon Raman Studies of Heavily Doped In_0. 53Ga_0. 47As^ H Yao, M Mohiuddin, YC Chang APS March Meeting Abstracts, B12. 11, 1997 | | 1997 |
| Raman Spectra of Delta-doped GaAs and Heavily Doped GaAs/Al_xGa_1-xAs Multiple Quantum Wells YC Chang, H Yao, M Mohiuddin, EF Schubert, L Pfeiffer APS March Meeting Abstracts, N14. 03, 1996 | | 1996 |
| Raman Characterization of Doping in Bulk In0. 53Ga0. 4--As and GaAs/AlxGa1-xAs Multiple Quantum Wells M Mohiuddin University of Nebraska--Lincoln, 1996 | | 1996 |
| Surface control structures for high-performance AlGaN/GaN HEMTs 17 T. Hashizume S Arshad, M Mohiuddin, A Bouloukou, M Missous, E Atanassova, ... | | |
Mohamed MissousProfessor of Semiconductor Materials and Devices在 manchester.ac.uk 的电子邮件经过验证
Mohamed MissousProfessor of Semiconductor Materials and Devices在 manchester.ac.uk 的电子邮件经过验证