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Tania Roy
Tania Roy
在 duke.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Field-effect transistors built from all two-dimensional material components
T Roy, M Tosun, JS Kang, AB Sachid, SB Desai, M Hettick, CC Hu, ...
ACS nano 8 (6), 6259-6264, 2014
7782014
Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors
T Roy, M Tosun, X Cao, H Fang, DH Lien, P Zhao, YZ Chen, YL Chueh, ...
ACS nano 9 (2), 2071-2079, 2015
6862015
The Role of Graphene and Other 2D Materials in Solar Photovoltaics
S Das, D Pandey, J Thomas, T Roy
Advanced Materials 31 (1), 1802722, 2019
4022019
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
T Roy, M Tosun, M Hettick, GH Ahn, C Hu, A Javey
Applied Physics Letters 108 (8), 083111, 2016
3172016
Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment
M Tosun, L Chan, M Amani, T Roy, GH Ahn, P Taheri, C Carraro, JW Ager, ...
ACS nano 10 (7), 6853-6860, 2016
2382016
Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice
B Pradhan, S Das, J Li, F Chowdhury, J Cherusseri, D Pandey, D Dev, ...
Science Advances 6 (7), eaay5225, 2020
2152020
Engineering light outcoupling in 2D materials
DH Lien, JS Kang, M Amani, K Chen, M Tosun, HP Wang, T Roy, ...
Nano letters 15 (2), 1356-1361, 2015
1792015
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
YS Puzyrev, T Roy, M Beck, BR Tuttle, RD Schrimpf, DM Fleetwood, ...
Journal of Applied Physics 109 (3), 034501, 2011
1532011
Process dependence of proton-induced degradation in GaN HEMTs
T Roy, EX Zhang, YS Puzyrev, DM Fleetwood, RD Schrimpf, BK Choi, ...
IEEE Transactions on Nuclear Science 57 (6), 3060-3065, 2010
1082010
A leaf-inspired photon management scheme using optically tuned bilayer nanoparticles for ultra-thin and highly efficient photovoltaic devices
S Das, MJ Hossain, SF Leung, A Lenox, Y Jung, K Davis, JH He, T Roy
Nano Energy 58, 47-56, 2019
982019
Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors
YS Puzyrev, T Roy, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2918-2924, 2011
932011
Artificial Neuron using Vertical MoS 2/Graphene Threshold Switching Memristors
H Kalita, A Krishnaprasad, N Choudhary, S Das, D Dev, Y Ding, L Tetard, ...
Scientific reports 9 (1), 1-8, 2019
922019
Novel mesoporous electrode materials for symmetric, asymmetric and hybrid supercapacitors
J Cherusseri, KS Kumar, N Choudhary, N Nagaiah, Y Jung, T Roy, ...
Nanotechnology 30 (20), 202001, 2019
882019
2D MoS2-Based Threshold Switching Memristor for Artificial Neuron
D Dev, A Krishnaprasad, MS Shawkat, Z He, S Das, D Fan, HS Chung, ...
IEEE Electron Device Letters 41 (6), 936-939, 2020
822020
Optoelectronic synapse using monolayer MoS 2 field effect transistors
MM Islam, D Dev, A Krishnaprasad, L Tetard, T Roy
Scientific reports 10 (1), 1-9, 2020
712020
Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition
MM Islam, A Krishnaprasad, D Dev, R Martinez-Martinez, V Okonkwo, ...
ACS nano, 2022
672022
Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions
T Roy, L Liu, S de la Barrera, B Chakrabarti, ZR Hesabi, CA Joiner, ...
Applied Physics Letters 104 (12), 123506, 2014
672014
Single event mechanisms in 90 nm triple-well CMOS devices
T Roy, AF Witulski, RD Schrimpf, ML Alles, LW Massengill
IEEE Transactions on Nuclear Science 55 (6), 2948-2956, 2008
642008
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, ...
Applied Physics Letters 99 (20), 203501, 2011
632011
Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering
MS Shawkat, J Gil, SS Han, TJ Ko, M Wang, D Dev, J Kwon, GH Lee, ...
ACS Applied Materials & Interfaces 12 (12), 14341-14351, 2020
602020
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