| User-interactive electronic skin for instantaneous pressure visualization C Wang, D Hwang, Z Yu, K Takei, J Park, T Chen, B Ma, A Javey Nature materials 12 (10), 899-904, 2013 | 1253 | 2013 |
| High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition MS Wong, D Hwang, AI Alhassan, C Lee, R Ley, S Nakamura, ... Optics express 26 (16), 21324-21331, 2018 | 287 | 2018 |
| Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs D Hwang, A Mughal, CD Pynn, S Nakamura, SP DenBaars Applied Physics Express 10 (3), 032101, 2017 | 237 | 2017 |
| Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation MS Wong, C Lee, DJ Myers, D Hwang, JA Kearns, T Li, JS Speck, ... Applied Physics Express 12 (9), 097004, 2019 | 191 | 2019 |
| Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition D Hwang, AJ Mughal, MS Wong, AI Alhassan, S Nakamura, SP DenBaars Applied Physics Express 11 (1), 012102, 2017 | 79 | 2017 |
| Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates D Hwang, BP Yonkee, BS Addin, RM Farrell, S Nakamura, JS Speck, ... Optics express 24 (20), 22875-22880, 2016 | 47 | 2016 |
| Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments MS Wong, J Back, D Hwang, C Lee, J Wang, S Gandrothula, T Margalith, ... Applied Physics Express 14 (8), 086502, 2021 | 21 | 2021 |
| Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring CD Pynn, L Chan, FL Gonzalez, A Berry, D Hwang, H Wu, T Margalith, ... Optics Express 25 (14), 15778-15785, 2017 | 17 | 2017 |
| Reduction of surface recombination losses in micro-LEDs T Lauermann, S Lutgen, D Hwang US Patent 10,622,519, 2020 | 15 | 2020 |
| Iii-v micro-led arrays and methods for preparing the same D Hwang, NG Young, B Yonkee, BK Saifaddin, SP DenBaars, JS Speck, ... US Patent App. 15/582,215, 2017 | 15 | 2017 |
| Fabrication and chemical lift-off of sub-micron scale III-nitride LED structures L Chan, T Karmstrand, A Chan, P Shapturenka, D Hwang, T Margalith, ... Optics Express 28 (23), 35038-35046, 2020 | 12 | 2020 |
| P—GaN-down micro-LED on semi-polar oriented GaN C Pynn, A Munkholm, D Hwang US Patent 10,923,630, 2021 | 11 | 2021 |
| Reduction of surface recombination losses in micro-leds T Lauermann, S Lutgen, D Hwang US Patent App. 16/369,059, 2019 | 6 | 2019 |
| Reduction of surface recombination losses in micro-LEDs T Lauermann, S Lutgen, D Hwang US Patent 10,644,196, 2020 | 5 | 2020 |
| Red micro-led with dopants in active region M Broell, D Hwang, SD Lester, A Tyagi, M Grundmann, G Lheureux, ... US Patent App. 17/081,935, 2021 | 4 | 2021 |
| Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes M Broell, M Grundmann, D Hwang, S Lutgen, BM McSkimming, A Tyagi US Patent App. 16/833,614, 2020 | 3 | 2020 |
| Reduction of surface recombination losses in micro-leds T Lauermann, S Lutgen, D Hwang US Patent App. 16/800,875, 2020 | 2 | 2020 |
| Efficiency improvement by using metal–insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes J Yin, D Hwang, HZ Siboni, E Fathi, R Chaji, D Ban Frontiers of Optoelectronics 17 (1), 8, 2024 | 1 | 2024 |
| Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays D Hwang University of California, Santa Barbara, 2018 | 1 | 2018 |
| Methods for fabricating iii-nitride tunnel junction devices BP Yonkee, AJ Mughal, D Hwang, EC Young, JS Speck, SP Denbaars, ... US Patent App. 16/325,246, 2019 | | 2019 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
