| Substrate grain size and orientation of Cu and Cu–Ni foils used for the growth of graphene films ZR Robinson, P Tyagi, TM Murray, CA Ventrice, S Chen, A Munson, ... Journal of Vacuum Science & Technology A 30 (1), 2012 | 68 | 2012 |
| Argon-assisted growth of epitaxial graphene on Cu (111) ZR Robinson, P Tyagi, TR Mowll, CA Ventrice Jr, JB Hannon Physical Review B 86 (23), 235413, 2012 | 52 | 2012 |
| Influence of chemisorbed oxygen on the growth of graphene on Cu (100) by chemical vapor deposition ZR Robinson, EW Ong, TR Mowll, P Tyagi, DK Gaskill, H Geisler, ... The Journal of Physical Chemistry C 117 (45), 23919-23927, 2013 | 47 | 2013 |
| Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ... Applied Physics Letters 104 (22), 2014 | 41 | 2014 |
| Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates BN Feigelson, VM Bermudez, JK Hite, ZR Robinson, VD Wheeler, ... Nanoscale 7 (8), 3694-3702, 2015 | 39 | 2015 |
| Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films MJ Tadjer, VD Wheeler, BP Downey, ZR Robinson, DJ Meyer, CR Eddy Jr, ... Solid-State Electronics 136, 30-35, 2017 | 32 | 2017 |
| Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ... Journal of Vacuum Science & Technology A 35 (3), 2017 | 23 | 2017 |
| Magnetic and structural properties of sintered bulk pucks and aerosol deposited films of Ti-doped barium hexaferrite for microwave absorption applications SD Johnson, CM Gonzalez, V Anderson, Z Robinson, HS Newman, ... Journal of Applied Physics 122 (2), 2017 | 19 | 2017 |
| Characterization of graphene films grown on CuNi foil substrates P Tyagi, ZR Robinson, A Munson, CW Magnuson, S Chen, JD McNeilan, ... Surface Science 634, 16-24, 2015 | 19 | 2015 |
| In situ hydrogen plasma exposure for varying the stoichiometry of atomic layer deposited niobium oxide films for use in neuromorphic computing applications AC Kozen, ZR Robinson, ER Glaser, M Twigg, TJ Larrabee, H Cho, ... ACS applied materials & interfaces 12 (14), 16639-16647, 2020 | 18 | 2020 |
| In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface A Nath, M Currie, AK Boyd, VD Wheeler, AD Koehler, MJ Tadjer, ... 2D Materials 3 (2), 025013, 2016 | 18 | 2016 |
| Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates JK Hite, ZR Robinson, CR Eddy Jr, BN Feigelson ACS applied materials & interfaces 7 (28), 15200-15205, 2015 | 18 | 2015 |
| Challenges to graphene growth on SiC (0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient ZR Robinson, GG Jernigan, M Currie, JK Hite, KM Bussmann, LO Nyakiti, ... Carbon 81, 73-82, 2015 | 16 | 2015 |
| Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods N Nepal, VR Anderson, SD Johnson, BP Downey, DJ Meyer, A DeMasi, ... Journal of Vacuum Science & Technology A 35 (3), 2017 | 15 | 2017 |
| Spectroscopy of strongly localized excitons and band-gap states in semiconducting single-walled carbon nanotubes ES Comfort, DA Jones, A Malapanis, ZR Robinson, MT Fishman, JU Lee Physical Review B 83 (8), 081401, 2011 | 13 | 2011 |
| Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy DR Boris, VR Anderson, N Nepal, SD Johnson, ZR Robinson, AC Kozen, ... Journal of Vacuum Science & Technology A 36 (5), 2018 | 10 | 2018 |
| Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering N Nepal, VR Anderson, SD Johnson, BP Downey, DJ Meyer, ... Journal of Vacuum Science & Technology A 37 (2), 2019 | 8 | 2019 |
| Chemical Vapor Deposition of Two-Dimensional Crystals ZR Robinson, SW Schmucker, KM McCreary, ED Cobas Handbook of Crystal Growth, 785-833, 2015 | 8 | 2015 |
| Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering JM Woodward, SG Rosenberg, AC Kozen, N Nepal, SD Johnson, ... Journal of Vacuum Science & Technology A 37 (3), 2019 | 7 | 2019 |
| In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth SG Rosenberg, C Wagenbach, VR Anderson, SD Johnson, N Nepal, ... Journal of Vacuum Science & Technology A 37 (2), 2019 | 7 | 2019 |
Carl A. Ventrice, Jr.College of Nanotechnology, Science, & Engineering, SUNY Polytechnic Institute在 albany.edu 的电子邮件经过验证
