| High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ... Nature communications 3 (1), 1011, 2012 | 1781 | 2012 |
| Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 780, 2012 | 1141 | 2012 |
| Three-dimensional semiconductor memory devices and methods of fabricating the same KS Seol, C Park, K Hwang, H Choi, D Yoo, S Hur, W Hwang, T Nakanishi, ... US Patent 9,536,970, 2017 | 616 | 2017 |
| High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande ACS nano 7 (6), 5446-5452, 2013 | 565 | 2013 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ... Applied Physics Letters 104 (20), 2014 | 390 | 2014 |
| Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ... Applied physics letters 101 (1), 2012 | 317 | 2012 |
| Exfoliated multilayer MoTe2 field-effect transistors S Fathipour, N Ma, WS Hwang, V Protasenko, S Vishwanath, HG Xing, ... Applied Physics Letters 105 (19), 2014 | 206 | 2014 |
| AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ... IEEE electron device letters 33 (3), 363-365, 2012 | 164 | 2012 |
| Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates WS Hwang, P Zhao, K Tahy, LO Nyakiti, VD Wheeler, RL Myers-Ward, ... APL materials 3 (1), 2015 | 105 | 2015 |
| High-performance photocurrent generation from two-dimensional WS2 field-effect transistors S Hwan Lee, D Lee, W Sik Hwang, E Hwang, D Jena, W Jong Yoo Applied Physics Letters 104 (19), 2014 | 104 | 2014 |
| Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors S Fathipour, M Remskar, A Varlec, A Ajoy, R Yan, S Vishwanath, ... Applied Physics Letters 106 (2), 2015 | 84 | 2015 |
| Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene WS Hwang, K Tahy, X Li, HG Xing, AC Seabaugh, CY Sung, D Jena Applied Physics Letters 100 (20), 2012 | 77 | 2012 |
| Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma WS Hwang, J Chen, WJ Yoo, V Bliznetsov Journal of Vacuum Science & Technology A 23 (4), 964-970, 2005 | 73 | 2005 |
| Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ... IEEE Electron Device Letters 32 (11), 1516-1518, 2011 | 72 | 2011 |
| A robust highly aligned DNA nanowire array-enabled lithography for graphene nanoribbon transistors SH Kang, WS Hwang, Z Lin, SH Kwon, SW Hong Nano Letters 15 (12), 7913-7920, 2015 | 62 | 2015 |
| Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors W Sik Hwang, M Remskar, R Yan, T Kosel, J Kyung Park, B Jin Cho, ... Applied Physics Letters 102 (4), 2013 | 55 | 2013 |
| Electrical Characteristics of Memory Devices With a High- Trapping Layer and Dual Tunneling Layer YQ Wang, WS Hwang, G Zhang, G Samudra, YC Yeo, WJ Yoo IEEE transactions on electron devices 54 (10), 2699-2705, 2007 | 55 | 2007 |
| High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis HJ Bae, TH Yoo, Y Yoon, IG Lee, JP Kim, BJ Cho, WS Hwang Nanomaterials 8 (8), 594, 2018 | 53 | 2018 |
| MBE growth of few-layer 2H-MoTe2 on 3D substrates S Vishwanath, A Sundar, X Liu, A Azcatl, E Lochocki, AR Woll, ... Journal of Crystal Growth 482, 61-69, 2018 | 52 | 2018 |
| Hydrothermal synthesis and photocatalytic property of Sn-doped β-Ga2O3 nanostructure H Ryou, TH Yoo, Y Yoon, IG Lee, M Shin, J Cho, BJ Cho, WS Hwang ECS Journal of solid state science and technology 9 (4), 045009, 2020 | 44 | 2020 |
Byung Jin ChoKAIST在 kaist.edu 的电子邮件经过验证
