| Efficient and Clean Gold‐Catalyzed One‐Pot Selective N‐Alkylation of Amines with Alcohols L He, XB Lou, J Ni, YM Liu, Y Cao, HY He, KN Fan Chemistry–A European Journal 16 (47), 13965-13969, 2010 | 188 | 2010 |
| Highly chemo‐and regioselective transfer reduction of aromatic nitro compounds using ammonium formate catalyzed by supported gold nanoparticles XB Lou, L He, Y Qian, YM Liu, Y Cao, KN Fan Advanced Synthesis & Catalysis 353 (2‐3), 281-286, 2011 | 123 | 2011 |
| A novel gold-catalyzed chemoselective reduction of α, β-unsaturated aldehydes using CO and H 2 O as the hydrogen source L He, FJ Yu, XB Lou, Y Cao, HY He, KN Fan Chemical communications 46 (9), 1553-1555, 2010 | 62 | 2010 |
| High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ... IEEE Electron Device Letters 37 (5), 556-559, 2016 | 58 | 2016 |
| Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices X Wang, OI Saadat, B Xi, X Lou, RJ Molnar, T Palacios, RG Gordon Applied Physics Letters 101 (23), 2012 | 51 | 2012 |
| Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ... Nano letters 16 (12), 7650-7654, 2016 | 43 | 2016 |
| DC and RF performance of AlGaN/GaN/SiC MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric H Zhou, X Lou, K Sutherlin, J Summers, SB Kim, KD Chabak, RG Gordon, ... IEEE Electron Device Letters 38 (10), 1409-1412, 2017 | 38 | 2017 |
| Synthesis of calcium (II) amidinate precursors for atomic layer deposition through a redox reaction between calcium and amidines SB Kim, C Yang, T Powers, LM Davis, X Lou, RG Gordon Angewandte Chemie International Edition 55 (35), 10228-10233, 2016 | 36 | 2016 |
| Enhancement-mode AlGaN/GaN fin-MOSHEMTs on Si substrate with atomic layer epitaxy MgCaO H Zhou, X Lou, SB Kim, KD Chabak, RG Gordon, DY Peide IEEE Electron Device Letters 38 (9), 1294-1297, 2017 | 23 | 2017 |
| Direct-liquid-evaporation chemical vapor deposition of nanocrystalline cobalt metal for nanoscale copper interconnect encapsulation J Feng, X Gong, X Lou, RG Gordon ACS applied materials & interfaces 9 (12), 10914-10920, 2017 | 20 | 2017 |
| Total-ionizing-dose responses of GaN-based HEMTs with different channel thicknesses and MOSHEMTs with epitaxial MgCaO as gate dielectric MA Bhuiyan, H Zhou, SJ Chang, X Lou, X Gong, R Jiang, H Gong, ... IEEE Transactions on Nuclear Science 65 (1), 46-52, 2017 | 16 | 2017 |
| Study of the crystal structure of SnS thin films by atomic layer deposition X Zhao, LM Davis, X Lou, SB Kim, S Uličná, A Jayaraman, C Yang, ... AIP Advances 11 (3), 2021 | 15 | 2021 |
| InGaAs 3D MOSFETs with drastically different shapes formed by anisotropic wet etching J Zhang, M Si, XB Lou, W Wu, RG Gordon, PD Ye 2015 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2015 | 13 | 2015 |
| III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface L Dong, XW Wang, JY Zhang, XF Li, XB Lou, N Conrad, H Wu, ... 2014 Symposium on VLSI technology (VLSI-Technology): digest of technical …, 2014 | 13 | 2014 |
| Band-Offset Analysis of Atomic Layer Deposition La2O3 on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth X Lou, X Gong, J Feng, R Gordon ACS applied materials & interfaces 11 (31), 28515-28519, 2019 | 11 | 2019 |
| Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate J Zhang, X Lou, M Si, H Wu, J Shao, MJ Manfra, RG Gordon, PD Ye Applied Physics Letters 106 (7), 2015 | 10 | 2015 |
| Atomic layer deposition of cubic tin–calcium sulfide alloy films C Yang, X Zhao, SB Kim, LT Schelhas, X Lou, RG Gordon Journal of Materials Research 35 (7), 795-803, 2020 | 7 | 2020 |
| Total ionizing dose (TID) effects in GaAs MOSFETs with La-based epitaxial gate dielectrics S Ren, MA Bhuiyan, J Zhang, X Lou, M Si, X Gong, R Jiang, K Ni, X Wan, ... IEEE Transactions on Nuclear Science 64 (1), 164-169, 2016 | 4 | 2016 |
| ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis X Gong, X Lou, SB Kim, RG Gordon ACS Applied Electronic Materials 3 (2), 845-853, 2021 | 3 | 2021 |
| InAs gate-all-around nanowire MOSFETs by top-down approach H Wu, XB Lou, M Si, JY Zhang, RG Gordon, V Tokranov, S Oktyabrsky, ... 72nd Device Research Conference, 213-214, 2014 | 3 | 2014 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
