| Blue superluminescent light-emitting diodes with output power above 100 mW for picoprojection F Kopp, C Eichler, A Lell, S Tautz, J Ristić, B Stojetz, C Höß, T Weig, ... Japanese Journal of Applied Physics 52 (8S), 08JH07, 2013 | 45 | 2013 |
| Longitudinal mode competition and mode clustering in (Al, In) GaN laser diodes T Weig, T Hager, G Brüderl, U Strauss, UT Schwarz Optics Express 22 (22), 27489-27503, 2014 | 41 | 2014 |
| Anisotropic optical conductivity of the putative Kondo insulator CeRu Sn V Guritanu, P Wissgott, T Weig, H Winkler, J Sichelschmidt, M Scheffler, ... arXiv preprint arXiv:1209.2942, 2012 | 37 | 2012 |
| Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence M Meneghini, S Carraro, G Meneghesso, N Trivellin, G Mura, F Rossi, ... Applied Physics Letters 103 (23), 2013 | 27 | 2013 |
| Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers PP Vasil'ev, AB Sergeev, IV Smetanin, T Weig, UT Schwarz, L Sulmoni, ... Applied Physics Letters 102 (12), 2013 | 17 | 2013 |
| Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage C De Santi, M Meneghini, M Marioli, M Buffolo, N Trivellin, T Weig, K Holc, ... Microelectronics Reliability 54 (9-10), 2147-2150, 2014 | 15 | 2014 |
| Picosecond pulse generation in monolithic GaN-based multi-section laser diodes K Holc, T Weig, W Pletschen, K Köhler, J Wagner, UT Schwarz Gallium Nitride Materials and Devices VIII 8625, 184-191, 2013 | 14 | 2013 |
| Terahertz Conductivity of the Heavy-Fermion State in CeCoIn5 M Scheffler, T Weig, M Dressel, H Shishido, Y Mizukami, T Terashima, ... Journal of the Physical Society of Japan 82 (4), 043712, 2013 | 13 | 2013 |
| Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation L Redaelli, H Wenzel, J Piprek, T Weig, S Einfeldt, M Martens, G Lükens, ... IEEE Journal of Quantum Electronics 51 (8), 1-6, 2015 | 12 | 2015 |
| Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias K Holc, T Weig, K Köhler, J Wagner, UT Schwarz Applied Physics Express 6 (8), 084101, 2013 | 12 | 2013 |
| Superluminescent light emitting diodes of 100mW output power for pico-projection UT Schwarz, F Kopp, T Weig, C Eichler, U Strauss 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR), 1-2, 2013 | 9 | 2013 |
| Implementation and investigation of mode locking in GaN‐based laser diodes in external cavity configuration T Weig, H Höck, K Holc, K Köhler, J Wagner, UT Schwarz physica status solidi (a) 212 (5), 986-991, 2015 | 8 | 2015 |
| Gallium nitride laser diodes with integrated absorber: on the dynamics of self‐pulsation K Holc, G Lükens, T Weig, K Köhler, J Wagner, UT Schwarz physica status solidi (c) 11 (3‐4), 670-673, 2014 | 8 | 2014 |
| Superfluorescent emission in electrically pumped semiconductor laser DL Boiko, X Zeng, T Stadelmann, S Grossmann, A Hoogerwerf, T Weig, ... arXiv preprint arXiv:1302.0263, 2013 | 8 | 2013 |
| Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes K Holc, A Jakob, T Weig, K Köhler, O Ambacher, UT Schwarz Novel In-Plane Semiconductor Lasers XIII 9002, 53-61, 2014 | 6 | 2014 |
| Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes T Weig, G Lükens, K Holc, K Köhler, J Wagner, UT Schwarz Novel In-Plane Semiconductor Lasers XIII 9002, 62-71, 2014 | 5 | 2014 |
| Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes T Weig, UT Schwarz, L Sulmoni, JM Lamy, JF Carlin, N Grandjean, ... Novel In-Plane Semiconductor Lasers XII 8640, 69-77, 2013 | 4 | 2013 |
| Generation of optical ultra–short pulses in (Al, In) GaN laser diodes T Weig Dissertation, Universität Freiburg, 2015, 2015 | 3 | 2015 |
| Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes L Redaelli, H Wenzel, T Weig, G Lükens, S Einfeldt, UT Schwarz, ... CLEO: Science and Innovations, CF1F. 3, 2013 | 1 | 2013 |
| Microscopic-scale investigation of the degradation of InGaN-based laser diodes submitted to electrical stress M Meneghini, S Carraro, G Meneghesso, N Trivellin, G Mura, F Rossi, ... Gallium Nitride Materials and Devices IX 8986, 210-216, 2014 | | 2014 |
Ulrich SchwarzProfessor, TU Chemnitz在 physik.tu-chemnitz.de 的电子邮件经过验证
