| Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT K Narang, RK Bag, VK Singh, A Pandey, SK Saini, R Khan, A Arora, ... Journal of Alloys and Compounds 815, 152283, 2020 | 37 | 2020 |
| Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT A Malik, C Sharma, R Laishram, RK Bag, DS Rawal, S Vinayak, ... Solid-State Electronics 142, 8-13, 2018 | 37 | 2018 |
| Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure A Pandey, VK Singh, S Dalal, RK Bag, K Narang, D Kaur, R Raman, ... Vacuum 178, 109442, 2020 | 28 | 2020 |
| Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates P Mohan, R Bag, S Singh, A Kumar, R Tyagi Nanotechnology 23 (2), 025601, 2011 | 24 | 2011 |
| Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE R Khan, RK Bag, K Narang, A Pandey, S Dalal, VK Singh, SK Saini, ... Journal of Materials Science: Materials in Electronics 30, 18910-18918, 2019 | 21 | 2019 |
| Growth of InAs quantum dots on germanium substrate using metal organic chemical vapor deposition technique T Dhawan, R Tyagi, RK Bag, M Singh, P Mohan, T Haldar, R Murlidharan, ... Nanoscale research letters 5, 31-37, 2010 | 15 | 2010 |
| Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence R Khan, A Arora, A Jain, BS Yadav, J Lohani, A Goyal, K Narang, ... Journal of Materials Science: Materials in Electronics 31, 14336-14344, 2020 | 12 | 2020 |
| Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface … MK Mishra, RK Sharma, R Manchanda, RK Bag, OP Thakur, ... AIP Advances 4 (9), 2014 | 9 | 2014 |
| Suitability of thin-GaN for AlGaN/GaN HEMT material and device K Narang, VK Singh, A Pandey, R Khan, RK Bag, DS Rawal, ... Journal of Materials Science 57 (10), 5913-5923, 2022 | 8 | 2022 |
| Effect of different layer structures on the RF performance of GaN HEMT devices J Raychaudhuri, J Mukherjee, S Kumar, R Bag, M Mishra, S Ghosh Semiconductor Science and Technology 36 (10), 105005, 2021 | 8 | 2021 |
| High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics K Narang, A Pandey, R Khan, VK Singh, RK Bag, MVG Padmavati, ... Materials Science and Engineering: B 278, 115635, 2022 | 7 | 2022 |
| Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it J Raychaudhuri, J Mukherjee, R Bag, A Malik, S Kumar, DS Rawal, ... Silicon 14 (18), 12505-12512, 2022 | 5 | 2022 |
| Investigation of carrier gas on morphological and structural characteristics of AlGaN/GaN HEMT K Narang, R Khan, A Pandey, VK Singh, RK Bag, MVG Padmavati, ... Materials Research Bulletin 153, 111875, 2022 | 4 | 2022 |
| Improvement in the crystalline quality of GaN and defects analysis using cathodoluminescence R Khan, K Narang, A Arora, R Tyagi, MVG Padmavati, RK Bag, U Riaz Materials Today: Proceedings 36, 631-636, 2021 | 4 | 2021 |
| Coalesced nanomorphology, in situ, and ex situ applications of self assembled gallium droplets grown by metal organic chemical vapor deposition J Lohani, RK Bag, MVG Padmavati, S Sapra, R Tyagi Chemical Physics 493, 175-182, 2017 | 4 | 2017 |
| Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD R Khan, K Narang, MVG Padmavati, R Tyagi, RK Bag, U Riaz Materials Today: Proceedings 36, 637-641, 2021 | 3 | 2021 |
| MOVPE growth of in situ Ga catalyzed AlGaAs nanowires on sapphire substrate RK Bag, J Lohani, R Tyagi, DK Pandya, R Singh Journal of Materials Science: Materials in Electronics 27, 2335-2341, 2016 | 3 | 2016 |
| Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template RK Bag, R Tyagi, P Mohan, K Narang, S Verma, R Muralidharan 16th International Workshop on Physics of Semiconductor Devices 8549, 145-150, 2012 | 2 | 2012 |
| Comparative study of polymer based novel organic–inorganic hetero-junctions with n-GaN and AlGaN/GaN epi-structures R Khan, AK Visvkarma, K Narang, RK Bag, MVG Padmavati, R Tyagi, ... Materials Science and Engineering: B 272, 115364, 2021 | 1 | 2021 |
| Growth of aluminum catalyzed AlGaAs nanowires on silicon substrate RK Bag, P Mohan, S Singh, A Kumar, R Tyagi, DK Pandya, R Singh Journal of Nanoscience and Nanotechnology 13 (3), 1899-1902, 2013 | 1 | 2013 |
