| Gate Oxide Degradation of SiC MOSFET in Switching Conditions R Ouaida, M Berthou, J León, X Perpina, S Oge, P Brosselard, C Joubert Electron Device Letters, 1, 2014 | 150 | 2014 |
| Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs M Berthou, P Godignon, J Milan IEEE Transaction on Power Electronics, 7, 2013 | 44 | 2013 |
| ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation J Vobecký, P Hazdra, V Záhlava, A Mihaila, M Berthou Solid-State Electronics 94, 32-38, 2014 | 36 | 2014 |
| Study of 4H-SiC Schottky diode designs for 3.3 kV applications H Bartolf, V Sundaramoorthy, A Mihaila, M Berthou, P Godignon, J Millan Materials Science Forum 778, 795-799, 2014 | 28 | 2014 |
| High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ... IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017 | 25 | 2017 |
| Study of 4H-SiC JBS diodes fabricated with tungsten Schottky barrier M Berthou, P Godignon, J Montserrat, J Millán, D Planson Journal of electronic materials 40, 2355-2362, 2011 | 21 | 2011 |
| Radiation defects produced in 4H-SiC epilayers by proton and alpha-particle irradiation P Hazdra, V Záhlava, J Vobecký, M Berthou, A Mihaila Materials Science Forum 740, 661-664, 2013 | 20 | 2013 |
| 4.5 kV SiC MOSFET with boron doped gate dielectric V Soler, M Cabello, J Montserrat, J Rebollo, J Millán, P Godignon, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 18 | 2016 |
| Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions B Maxime, O Remy, C Thibault, B Pierre, O Sebastion, T Dominique 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 17 | 2015 |
| State of art of current and future technologies in current limiting devices R Ouaida, M Berthou, D Tournier, JF Depalma 2015 IEEE First International Conference on DC Microgrids (ICDCM), 175-180, 2015 | 17 | 2015 |
| Implementation of high voltage Silicon Carbide rectifiers and switches M Berthou Lyon, INSA, 2012 | 13 | 2012 |
| Structural analysis of SiC Schottky diodes failure mechanism under current overload J León, M Berthou, X Perpiñà, V Banu, J Montserrat, M Vellvehi, ... Journal of Physics D: Applied Physics 47 (5), 055102, 2013 | 11 | 2013 |
| Temperature effects on the ruggedness of SiC Schottky diodes under surge current J León, X Perpiñà, V Banu, J Montserrat, M Berthou, M Vellvehí, ... Microelectronics Reliability 54 (9-10), 2207-2212, 2014 | 10 | 2014 |
| Edge termination design improvements for 10 kV 4H-SiC bipolar diodes DM Nguyen, R Huang, LV Phung, D Planson, M Berthou, P Godignon, ... Materials Science Forum 740, 609-612, 2013 | 10 | 2013 |
| Planar edge terminations for high voltage 4H-SiC power MOSFETs V Soler, M Berthou, A Mihaila, J Monserrat, P Godignon, J Rebollo, ... Semiconductor Science and Technology 32 (3), 035007, 2017 | 9 | 2017 |
| Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes J León, X Perpiñà, M Vellvehi, X Jordà, M Berthou, P Godignon Journal of Physics D: Applied Physics 47 (38), 385101, 2014 | 8 | 2014 |
| Rapid and Efficient Oxidation Process of SiC by In Situ Multiple RTP Steps A Constant, N Camara, P Godignon, M Berthou, J Camassel, JM Decams Materials Science Forum 645, 817-820, 2010 | 8 | 2010 |
| Investigation of using SiC MOSFET for high temperature applications R Ouaida, M Berthou, P Brosselard, S Oge, P Bevilacqua, C Joubert EPE Journal 25 (2), 5-11, 2015 | 7 | 2015 |
| Repetitive Short-Circuit tests on SiC VMOS devices M Berthou, P Bevilacqua, JB Fonder, D Tournier Materials Science Forum 858, 812-816, 2016 | 6 | 2016 |
| Experimental analysis of planar edge terminations for high voltage 4H-SiC devices V Soler, M Berthou, A Mihaila, J Montserrat, P Godignon, J Rebollo, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 68-71, 2015 | 6 | 2015 |
Dominique TournierPower Electronics Expert在 usicpower.com 的电子邮件经过验证
Dominique TournierPower Electronics Expert在 usicpower.com 的电子邮件经过验证
Xavier PerpiñàTenured Scientist, IMB-CNM (CSIC)在 imb-cnm.csic.es 的电子邮件经过验证