受强制性开放获取政策约束的文章 - Maxime Berthou了解详情
无法在其他位置公开访问的文章：11 篇
Gate Oxide Degradation of SiC MOSFET in Switching Conditions
R Ouaida, M Berthou, J León, X Perpina, S Oge, P Brosselard, C Joubert
Electron Device Letters, 1, 2014
强制性开放获取政策： Government of Spain
Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs
M Berthou, P Godignon, J Milan
IEEE Transaction on Power Electronics, 7, 2013
强制性开放获取政策： Government of Spain
Study of 4H-SiC JBS diodes fabricated with tungsten Schottky barrier
M Berthou, P Godignon, J Montserrat, J Millán, D Planson
Journal of electronic materials 40, 2355-2362, 2011
强制性开放获取政策： Government of Spain
4.5 kV SiC MOSFET with boron doped gate dielectric
V Soler, M Cabello, J Montserrat, J Rebollo, J Millán, P Godignon, ...
2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016
强制性开放获取政策： European Commission, Government of Spain
Planar edge terminations for high voltage 4H-SiC power MOSFETs
V Soler, M Berthou, A Mihaila, J Monserrat, P Godignon, J Rebollo, ...
Semiconductor Science and Technology 32 (3), 035007, 2017
强制性开放获取政策： European Commission, Government of Spain
Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes
J León, X Perpiñà, M Vellvehi, X Jordà, M Berthou, P Godignon
Journal of Physics D: Applied Physics 47 (38), 385101, 2014
强制性开放获取政策： Government of Spain
Impact of layout on the surge current robustness of 1.2 KV SiC diodes
V Banu, M Berthou, J Montserrat, X Jordà, P Godignon
2017 International Semiconductor Conference (CAS), 147-150, 2017
强制性开放获取政策： Government of Spain
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices
V Soler, M Berthou, A Mihaila, J Montserrat, P Godignon, J Rebollo, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 68-71, 2015
强制性开放获取政策： European Commission, Government of Spain
High temperature capability of high voltage 4H-SiC JBS
M Berthou, P Godignon, B Vergne, P Brosselard
Materials Science Forum 711, 124-128, 2012
强制性开放获取政策： Government of Spain
Integration of temperature and current sensors in 4H-SiC VDMOS
M Berthou, P Godignon, P Brosselard, D Tournier, J Millán
Materials Science Forum 717, 1093-1096, 2012
强制性开放获取政策： Government of Spain
Impact of channel mobility improvement using boron diffusion on different power MOSFETs voltage classes
V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ...
Materials Science Forum 897, 537-540, 2017
强制性开放获取政策： Government of Spain
可在其他位置公开访问的文章：7 篇
High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide
V Soler, M Cabello, M Berthou, J Montserrat, J Rebollo, P Godignon, ...
IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017
强制性开放获取政策： Government of Spain
Structural analysis of SiC Schottky diodes failure mechanism under current overload
J León, M Berthou, X Perpiñà, V Banu, J Montserrat, M Vellvehi, ...
Journal of Physics D: Applied Physics 47 (5), 055102, 2013
强制性开放获取政策： Government of Spain
Temperature effects on the ruggedness of SiC Schottky diodes under surge current
J León, X Perpiñà, V Banu, J Montserrat, M Berthou, M Vellvehí, ...
Microelectronics Reliability 54 (9-10), 2207-2212, 2014
强制性开放获取政策： Government of Spain
Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
MJ Tadjer, A Constant, P Godignon, S Martin-Horcajo, A Bosca, F Calle, ...
Materials Science Forum 740, 553-556, 2013
强制性开放获取政策： Government of Spain
Effect of the Growth Conditions on the Properties of Nitrided Oxides Grown by RTP for 4H-SiC p-Channel MOSFETs Fabrication
A Constant, M Berthou, M Florentin, J Millan, P Godignon
Journal of the Electrochemical Society 159 (5), H516, 2012
强制性开放获取政策： Government of Spain
Studies on Floating Contact Press-Pack Diodes Surge Current Capability
V Banu, M Berthou, J Montserrat, X Jordá, J Millan, P Godignon
Materials Science Forum 858, 1053-1056, 2016
强制性开放获取政策： Government of Spain
Thermal Behavior of SiC Power Diodes
J Millán, P Godignon, X Jordà, M Berthou, V Banu
ECS Transactions 50 (3), 399, 2013
强制性开放获取政策： Government of Spain
出版信息和资助信息由计算机程序自动确定