Additives for bottom-up copper plating from an alkaline complexed electrolyte A Joi, R Akolkar, U Landau Journal of The Electrochemical Society 160 (12), D3001, 2013 | 30 | 2013 |
Interface engineering strategy utilizing electrochemical ALD of Cu-Zn for enabling metallization of sub-10 nm semiconductor device nodes A Joi, K Venkatraman, KC Tso, D Dictus, Y Dordi, PW Wu, CW Pao, ... ECS Journal of Solid State Science and Technology 8 (9), P516, 2019 | 21 | 2019 |
Electroless atomic layer deposition of copper K Venkatraman, A Joi, Y Dordi, R Akolkar Electrochemistry Communications 91, 45-48, 2018 | 15 | 2018 |
Pulse electrodeposition of copper-manganese alloy for application in interconnect metallization A Joi, R Akolkar, U Landau Journal of The Electrochemical Society 160 (12), D3145, 2013 | 15 | 2013 |
Pb Monolayer Mediated Thin Film Growth of Cu and Co: Exploring Different Concepts D Wu, DJ Solanki, A Joi, Y Dordi, N Dole, D Litvnov, SR Brankovic Journal of The Electrochemical Society 166 (1), D3013, 2018 | 13 | 2018 |
Electroless deposition of Pb monolayer: a new process and application to surface selective atomic layer deposition D Wu, DJ Solanki, JL Ramirez, W Yang, A Joi, Y Dordi, N Dole, ... Langmuir 34 (38), 11384-11394, 2018 | 11 | 2018 |
Pulse electrodeposition of copper-manganese alloy in deep eutectic solvent WS Chiang, JQ Huang, PC Chen, PW Wu, A Joi, Y Dordi Journal of Alloys and Compounds 742, 38-44, 2018 | 11 | 2018 |
Pulse plating of copper germanide A Joi, R Akolkar, U Landau Applied Physics Letters 102 (13), 2013 | 11 | 2013 |
Underpotential and electroless Pb monolayer deposition on Ru (0001) D Wu, K Ahmadi, N Dole, A Joi, Y Dordi, SR Brankovic Journal of The Electrochemical Society 166 (10), D359, 2019 | 8 | 2019 |
Doped Ru to enable next generation barrier-less interconnect A Joi, A Lesniewska, D Dictus, KC Tso, K Venkatraman, Y Dordi, K Croes, ... Journal of Applied Physics 132 (17), 2022 | 6 | 2022 |
Investigation of RuZn alloy as barrier to Cu interconnect P Wang, XP Qu, Y Dordi, A Joi Journal of Materials Science: Materials in Electronics 33 (9), 6318-6328, 2022 | 6 | 2022 |
Electroless deposition of continuous cobalt layer using complexed Ti3+ metal ions as reducing agents E Norkus, I Stankeviciene, A Jagminiene, JOI Aniruddha, ... US Patent 9,428,836, 2016 | 6 | 2016 |
Self-forming barrier process JOI Aniruddha, Y Dordi US Patent 10,163,695, 2018 | 5 | 2018 |
Electroless deposition of continuous platinum layer E Norkus, A Jagminiene, A Zieliene, I Stankeviciene, ... US Patent 9,469,902, 2016 | 5 | 2016 |
An alkaline copper plating process providing high nucleation density on Ru and bottom-up fill A Joi, U Landau 220th ECS Meeting, Abstract, 9-14, 1944 | 5 | 1944 |
Self-forming barrier process JOI Aniruddha, Y Dordi US Patent 10,483,163, 2019 | 4 | 2019 |
Electroless Deposition of Continuous Platinum Layer Using Complexed Co2+ Metal Ion Reducing Agent E Norkus, I Stankeviciene, A Jagminiene, L Tamašauskaite-Tamašiunaite, ... US Patent US9499913B2 22, 2016 | 3 | 2016 |
Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent E Norkus, I Stankeviciene, A Jagminiene, L Tamasauskaite-tamasiunaite, ... US Patent 9,499,913, 2016 | 3 | 2016 |
ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS E Norkus, A Jagminiene, I Stankeviciene, JOI Aniruddha, Y Dordi US Patent App. 14/265,001, 2015 | 3 | 2015 |
Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment K Venkatraman, Y Dordi, JOI Aniruddha US Patent 10,501,846, 2019 | 2 | 2019 |