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Aniruddha Joi
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引用次数
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年份
Additives for bottom-up copper plating from an alkaline complexed electrolyte
A Joi, R Akolkar, U Landau
Journal of The Electrochemical Society 160 (12), D3001, 2013
302013
Interface engineering strategy utilizing electrochemical ALD of Cu-Zn for enabling metallization of sub-10 nm semiconductor device nodes
A Joi, K Venkatraman, KC Tso, D Dictus, Y Dordi, PW Wu, CW Pao, ...
ECS Journal of Solid State Science and Technology 8 (9), P516, 2019
212019
Electroless atomic layer deposition of copper
K Venkatraman, A Joi, Y Dordi, R Akolkar
Electrochemistry Communications 91, 45-48, 2018
152018
Pulse electrodeposition of copper-manganese alloy for application in interconnect metallization
A Joi, R Akolkar, U Landau
Journal of The Electrochemical Society 160 (12), D3145, 2013
152013
Pb Monolayer Mediated Thin Film Growth of Cu and Co: Exploring Different Concepts
D Wu, DJ Solanki, A Joi, Y Dordi, N Dole, D Litvnov, SR Brankovic
Journal of The Electrochemical Society 166 (1), D3013, 2018
132018
Electroless deposition of Pb monolayer: a new process and application to surface selective atomic layer deposition
D Wu, DJ Solanki, JL Ramirez, W Yang, A Joi, Y Dordi, N Dole, ...
Langmuir 34 (38), 11384-11394, 2018
112018
Pulse electrodeposition of copper-manganese alloy in deep eutectic solvent
WS Chiang, JQ Huang, PC Chen, PW Wu, A Joi, Y Dordi
Journal of Alloys and Compounds 742, 38-44, 2018
112018
Pulse plating of copper germanide
A Joi, R Akolkar, U Landau
Applied Physics Letters 102 (13), 2013
112013
Underpotential and electroless Pb monolayer deposition on Ru (0001)
D Wu, K Ahmadi, N Dole, A Joi, Y Dordi, SR Brankovic
Journal of The Electrochemical Society 166 (10), D359, 2019
82019
Doped Ru to enable next generation barrier-less interconnect
A Joi, A Lesniewska, D Dictus, KC Tso, K Venkatraman, Y Dordi, K Croes, ...
Journal of Applied Physics 132 (17), 2022
62022
Investigation of RuZn alloy as barrier to Cu interconnect
P Wang, XP Qu, Y Dordi, A Joi
Journal of Materials Science: Materials in Electronics 33 (9), 6318-6328, 2022
62022
Electroless deposition of continuous cobalt layer using complexed Ti3+ metal ions as reducing agents
E Norkus, I Stankeviciene, A Jagminiene, JOI Aniruddha, ...
US Patent 9,428,836, 2016
62016
Self-forming barrier process
JOI Aniruddha, Y Dordi
US Patent 10,163,695, 2018
52018
Electroless deposition of continuous platinum layer
E Norkus, A Jagminiene, A Zieliene, I Stankeviciene, ...
US Patent 9,469,902, 2016
52016
An alkaline copper plating process providing high nucleation density on Ru and bottom-up fill
A Joi, U Landau
220th ECS Meeting, Abstract, 9-14, 1944
51944
Self-forming barrier process
JOI Aniruddha, Y Dordi
US Patent 10,483,163, 2019
42019
Electroless Deposition of Continuous Platinum Layer Using Complexed Co2+ Metal Ion Reducing Agent
E Norkus, I Stankeviciene, A Jagminiene, L Tamašauskaite-Tamašiunaite, ...
US Patent US9499913B2 22, 2016
32016
Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent
E Norkus, I Stankeviciene, A Jagminiene, L Tamasauskaite-tamasiunaite, ...
US Patent 9,499,913, 2016
32016
ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS
E Norkus, A Jagminiene, I Stankeviciene, JOI Aniruddha, Y Dordi
US Patent App. 14/265,001, 2015
32015
Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment
K Venkatraman, Y Dordi, JOI Aniruddha
US Patent 10,501,846, 2019
22019
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