| High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ... Applied physics letters 74 (5), 762-764, 1999 | 258 | 1999 |
| AlGaN ultraviolet photoconductors grown on sapphire D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi Applied Physics Letters 68 (15), 2100-2101, 1996 | 256 | 1996 |
| High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi Applied Physics Letters 66 (22), 2958-2960, 1995 | 253 | 1995 |
| High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ... Applied physics letters 84 (7), 1046-1048, 2004 | 229 | 2004 |
| Electroluminescence at 375nm from a ZnO∕ GaN: Mg∕ c-Al2O3 heterojunction light emitting diode DJ Rogers, F Hosseini Teherani, A Yasan, K Minder, P Kung, M Razeghi Applied physics letters 88 (14), 2006 | 228 | 2006 |
| Solar-blind AlGaN photodiodes with very low cutoff wavelength D Walker, V Kumar, K Mi, P Sandvik, P Kung, XH Zhang, M Razeghi Applied Physics Letters 76 (4), 403-405, 2000 | 223 | 2000 |
| High-quality visible-blind AlGaN p-i-n photodiodes E Monroy, M Hamilton, D Walker, P Kung, FJ Sánchez, M Razeghi Applied physics letters 74 (8), 1171-1173, 1999 | 208 | 1999 |
| High quantum efficiency AlGaN solar-blind p-i-n photodiodes R McClintock, A Yasan, K Mayes, D Shiell, SR Darvish, P Kung, ... Applied physics letters 84 (8), 1248-1250, 2004 | 193 | 2004 |
| 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes A Yasan, R McClintock, K Mayes, D Shiell, L Gautero, SR Darvish, P Kung, ... Applied Physics Letters 83 (23), 4701-4703, 2003 | 193 | 2003 |
| Visible blind GaN p-i-n photodiodes D Walker, A Saxler, P Kung, X Zhang, M Hamilton, J Diaz, M Razeghi Applied physics letters 72 (25), 3303-3305, 1998 | 168 | 1998 |
| Determination of the band-gap energy of Al1-xInxN grown by metal-organic chemical-vapor deposition KS Kim, A Saxler, P Kung, M Razeghi, KY Lim Applied physics letters 71 (6), 800-802, 1997 | 163 | 1997 |
| (0⩽) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition D Walker, X Zhang, A Saxler, P Kung, J Xu, M Razeghi Applied Physics Letters 70 (8), 949-951, 1997 | 162 | 1997 |
| Growth of AlxGa1−xN:Ge on sapphire and silicon substrates X Zhang, P Kung, A Saxler, D Walker, TC Wang, M Razeghi Applied physics letters 67 (12), 1745-1747, 1995 | 151 | 1995 |
| A crystallographic model of (00⋅ 1) aluminum nitride epitaxial thin film growth on (00⋅ 1) sapphire substrate CJ Sun, P Kung, A Saxler, H Ohsato, K Haritos, M Razeghi Journal of applied physics 75 (8), 3964-3967, 1994 | 149 | 1994 |
| Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes R McClintock, JL Pau, K Minder, C Bayram, P Kung, M Razeghi Applied Physics Letters 90 (14), 2007 | 139 | 2007 |
| 320× 256 solar-blind focal plane arrays based on AlxGa1− xN R McClintock, K Mayes, A Yasan, D Shiell, P Kung, M Razeghi Applied Physics Letters 86 (1), 2005 | 136 | 2005 |
| AlxGa1− xN for solar-blind UV detectors P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ... Journal of crystal growth 231 (3), 366-370, 2001 | 136 | 2001 |
| Photovoltaic effects in GaN structures with p‐n junctions X Zhang, P Kung, D Walker, J Piotrowski, A Rogalski, A Saxler, ... Applied physics letters 67 (14), 2028-2030, 1995 | 134 | 1995 |
| High quality aluminum nitride epitaxial layers grown on sapphire substrates A Saxler, P Kung, CJ Sun, E Bigan, M Razeghi Applied physics letters 64 (3), 339-341, 1994 | 130 | 1994 |
| Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm A Yasan, R McClintock, K Mayes, SR Darvish, P Kung, M Razeghi Applied physics letters 81 (5), 801-802, 2002 | 129 | 2002 |
