| Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells Y Zhao, M Xu, X Huang, J Lebeau, T Li, D Wang, H Fu, K Fu, X Wang, ... Materials Today Energy 31, 101229, 2023 | 18 | 2023 |
| GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ... IEEE Transactions on Electron Devices, 2023 | 8 | 2023 |
| Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications A Biswas, R Maiti, F Lee, CY Chen, T Li, AB Puthirath, SA Iyengar, C Li, ... Nanoscale Horizons 8 (5), 641-651, 2023 | 7* | 2023 |
| Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer M Xu, A Biswas, T Li, Z He, S Luo, Z Mei, J Zhou, C Chang, AB Puthirath, ... Applied Physics Letters 123 (23), 2023 | 5 | 2023 |
| Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments S Luo, K Fu, Q Xie, M Yuan, G Gao, H Guo, R Xu, N Giles, T Li, Z Mei, ... Applied Physics Letters 123 (24), 2023 | 4 | 2023 |
| Non‐Linear Optics at Twist Interfaces in h‐BN/SiC Heterostructures A Biswas, R Xu, GA Alvarez, J Zhang, J Christiansen‐Salameh, ... Advanced Materials 35 (47), 2304624, 2023 | 4 | 2023 |
| Understanding the Breakdown Behavior of Ultrawide Bandgap BN Power Diodes Using Device Modeling Z He, K Fu, M Xu, J Zhou, T Li, Y Zhao physica status solidi (RRL)–Rapid Research Letters, 2023 | 4* | 2023 |
| Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition A Biswas, GA Alvarez, T Li, J Christiansen-Salameh, E Jeong, ... Physical Review Materials 7 (9), 094602, 2023 | 1 | 2023 |
| Top-down fabrication of diamond nanostructures C Li, T Pieshkov, Z Mei, M Xu, T Li, J Murukeshan, R Vajtai, Y Zhao, ... Diamond and Related Materials, 111535, 2024 | | 2024 |
| Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric Z He, X Zhang, TS Pieshkov, AE Yekta, T Terlier, DH Mudiyanselage, ... Applied Physics Letters 125 (4), 2024 | | 2024 |
| GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350° C S Luo, C Chang, Q Xie, T Li, M Xu, Z He, T Palacios, Y Zhao 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method J Zhou, T Li, X Zhao, X Zhang, J Doumani, M Xu, Z He, S Luo, Z Mei, ... Semiconductor Science and Technology, 2024 | | 2024 |
| Modulation of dielectric properties of hexagonal/cubic boron nitride composites M Xu, Z He, A Biswas, S Luo, T Li, C Chang, C Li, B Gao, R Vajtai, P Dai, ... Applied Physics Letters 124 (19), 2024 | | 2024 |
| Ultrawide-bandgap boron nitride thin films grown on diamond via pulsed laser deposition A BISWAS, G A Alvarez, T Li, J Christiansen-Salameh, E Jeong, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Topological Photonic Devices in the UV-Visible Spectrum Based on the III-N Wide Bandgap Semiconductor Platform T Li Rice University, 2024 | | 2024 |
| Edge States Propagation within h-BN Topological Photonic Structures in UV-Vis Spectrum T Li, J Zhou, K Fu, M Xu, Z He, Y Zhao 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | | 2022 |
Yuji ZhaoProfessor, Electrical and Computer Engineering, Rice University在 rice.edu 的电子邮件经过验证
