| Prospects for LED lighting S Pimputkar, JS Speck, SP DenBaars, S Nakamura Nature photonics 3 (4), 180-182, 2009 | 2347 | 2009 |
| Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra Applied Physics Letters 77 (2), 250-252, 2000 | 1415 | 2000 |
| Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films B Heying, XH Wu, S Keller, Y Li, D Kapolnek, BP Keller, SP DenBaars, ... Applied physics letters 68 (5), 643-645, 1996 | 1103 | 1996 |
| Strain-induced polarization in wurtzite III-nitride semipolar layers AE Romanov, TJ Baker, S Nakamura, JS Speck Journal of Applied Physics 100 (2), 2006 | 879 | 2006 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 850* | 2006 |
| Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop J Iveland, L Martinelli, J Peretti, JS Speck, C Weisbuch Physical review letters 110 (17), 177406, 2013 | 763 | 2013 |
| Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. I. Theory JS Speck, W Pompe Journal of applied physics 76 (1), 466-476, 1994 | 759* | 1994 |
| Structural characterization of nonpolar a-plane GaN thin films grown on r-plane sapphire MD Craven, SH Lim, F Wu, JS Speck, SP DenBaars Applied Physics Letters 81 (3), 469-471, 2002 | 673 | 2002 |
| Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ... Journal of applied physics 86 (8), 4520-4526, 1999 | 605 | 1999 |
| Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells XH Wu, CR Elsass, A Abare, M Mack, S Keller, PM Petroff, SP DenBaars, ... Applied Physics Letters 72 (6), 692-694, 1998 | 605 | 1998 |
| Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy B Heying, R Averbeck, LF Chen, E Haus, H Riechert, JS Speck Journal of Applied Physics 88 (4), 1855-1860, 2000 | 597 | 2000 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005 | 591 | 2005 |
| Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes H Sato, H Hirasawa, RB Chung, SP DenBaars, JS Speck, S Nakamura US Patent 8,148,713, 2012 | 586 | 2012 |
| Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 XH Wu, LM Brown, D Kapolnek, S Keller, B Keller, SP DenBaars, ... Journal of applied physics 80 (6), 3228-3237, 1996 | 567 | 1996 |
| Mosaic structure in epitaxial thin films having large lattice mismatch V Srikant, JS Speck, DR Clarke Journal of applied physics 82 (9), 4286-4295, 1997 | 553 | 1997 |
| Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy EJ Tarsa, B Heying, XH Wu, P Fini, SP DenBaars, JS Speck Journal of applied physics 82 (11), 5472-5479, 1997 | 534 | 1997 |
| Dislocation mediated surface morphology of GaN B Heying, EJ Tarsa, CR Elsass, P Fini, SP DenBaars, JS Speck Journal of Applied Physics 85 (9), 6470-6476, 1999 | 512 | 1999 |
| Electrical characterization of GaN junctions with and without threading dislocations P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ... Applied physics letters 73 (7), 975-977, 1998 | 487 | 1998 |
| Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ... Acta Materialia 61 (3), 945-951, 2013 | 476 | 2013 |
| Nonpolar InGaN∕ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak A Chakraborty, BA Haskell, S Keller, JS Speck, SP DenBaars, ... Applied Physics Letters 85 (22), 5143-5145, 2004 | 450* | 2004 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
