| Schottky barrier parameters of Pd/Ti contacts on n-type InP revealed from I-V-T and C-V-T measurements NNKRVRR D. Subba Reddy Journal of Modern Physics 2, 113-123, 2011 | 53 | 2011 |
| Onion-Ring-like Carbon and Nitrogen from ZIF-8 on TiO2/Fe2O3 Nanostructure for Overall Electrochemical Water Splitting SVP Vattikuti, KC Devarayapalli, NK Reddy Nallabala, TN Nguyen, ... The Journal of Physical Chemistry Letters 12 (25), 5909-5918, 2021 | 44 | 2021 |
| Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I-V-T and C-V-T measurements NNKRVR Reddy Bulletin of Material Science 35, 53-61, 2012 | 36 | 2012 |
| Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector SVPV Nanda Kumar Reddy Nallabala, Srinivas Godavarthi, Venkata ... Materials Science in Semiconductor Processing 117, 105190, 2020 | 34 | 2020 |
| Zr-doped SnO2 thin films synthesized by spray pyrolysis technique for barrier layers in solar cells NNK Reddy, HS Akkera, MC Sekhar, SH Park Applied Physics A 123, 1-7, 2017 | 32 | 2017 |
| Influence of Ga doping on structural, optical and electrical properties of transparent conducting SnO2 thin films P Sivakumar, HS Akkera, TRK Reddy, GS Reddy, N Kambhala, ... Optik 226, 165859, 2021 | 28 | 2021 |
| High performance, self-powered and thermally stable 200–750 nm spectral responsive gallium nitride (GaN) based broadband photodetectors SVPV Nanda Kumar Reddy Nallabala, Srinivas Godavarthi, Venkata Krishnaiah ... Solar Energy Materials and Solar Cells 225, 111033, 2021 | 23 | 2021 |
| Enhanced photoresponse performance in GaN based symmetric type MSM ultraviolet-A and MIS ultraviolet-A to C photodetectors NKR Nallabala, VRM Reddy, VR Singh, KR Bakash, S Kumar, D Saha, ... Sensors and Actuators A: Physical 339, 113502, 2022 | 21 | 2022 |
| Highly sensitive and cost-effective metal-semiconductor-metal asymmetric type Schottky metallization based ultraviolet photodetecting sensors fabricated on n-type GaN NKR Nallabala, SVP Vattikuti, VK Verma, VR Singh, S Alhammadi, ... Materials Science in Semiconductor Processing 138, 106297, 2022 | 19 | 2022 |
| Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies VRRNNK Reddy Superlattices and Microstructures 52, 484-499, 2012 | 19 | 2012 |
| Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure MC Sekhar, NNK Reddy, HS Akkera, BP Reddy, V Rajendar, S Uthanna, ... Journal of Alloys and Compounds 718, 104-111, 2017 | 18 | 2017 |
| Structural, optical and electrical properties of DC reactive magnetron sputtered (Ta2O5)1−x(TiO2)x thin films SU M. Chandra Sekhar, N. Nanda Kumar Reddy , V.K. Verma Ceramics International, 2016 | 18 | 2016 |
| Transformation of g-C3N4 into onion like carbon on nickel nanoparticles for ultrafast hydrogenation MK Kesarla, NNK Reddy, F Ortiz-Chi, CG Espinosa-González, JGT Torres, ... Materials Chemistry and Physics 240, 122157, 2020 | 17 | 2020 |
| Optical and spectroscopic properties of Ho3+-doped fluorophosphate glasses for visible lighting applications G Neelima, N Ravi, N Kiran, NKR Nallabala, VK Kummara, K Suresh, ... Materials Research Bulletin 124, 110753, 2020 | 16 | 2020 |
| Influence of substrate bias voltage on crystallographic structure, optical and electronic properties of Al/(Ta2O5)0.85(TiO2)0.15/p-Si MIS Schottky barrier diodes fabricated by … SHP M. Chandra Sekhar, N. Nanda Kumar Reddy, B. Purusottam Reddy, B. Poorna ... Materials Science in Semiconductor Processing 76, 80-86, 2018 | 15 | 2018 |
| Influence of rapid thermal annealing effect on electrical and structural properties of Pd/Ru Schottky contacts to n-type GaN NNK Reddy, VR Reddy, CJ Choi Materials Chemistry and Physics 130 (3), 1000-1006, 2011 | 15 | 2011 |
| Structure, morphology, photonconversion and energy transfer characteristics of Er3+/Yb3+: BaYF5 nanocrystals synthesized by hydrothermal method for photovoltaics KV Krishnaiah, P Venkatalakshmamma, KU Kumar, P Haritha, V Lavin, ... Ceramics International 49 (16), 26879-26889, 2023 | 12 | 2023 |
| Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods V Manjunath, NKR Nallabala, C Yuvaraj, C Kukkambakam, VK Kummara, ... Applied Physics A 127, 1-12, 2021 | 11 | 2021 |
| Near infrared broadband and visible upconversion emissions of erbium ions in oxyfluoride glasses for optical amplifier applications VK Kummara, G Neelima, N Ravi, NNK Reddy, HSK Reddy, ... Optics & Laser Technology 127, 106167, 2020 | 11 | 2020 |
| Self-powered and improved photoresponsive broadband photodetecting sensors using Au/NiFe2O4/p-Si heterojunction architecture NKR Nallabala, SS Kushvaha, A Kumari, VR Singh, VK Verma, ... Materials Science in Semiconductor Processing 156, 107266, 2023 | 10 | 2023 |
Dr. Ravi NirlakallaProfessor in Physics, Rajeev Gandhi Memorial College of Engineering & Technology在 rgmcet.edu.in 的电子邮件经过验证
