| Some effects of oxygen impurities on AlN and GaN GA Slack, LJ Schowalter, D Morelli, JA Freitas Jr Journal of Crystal Growth 246 (3-4), 287-298, 2002 | 522 | 2002 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 417 | 2020 |
| A 271.8 nm deep-ultraviolet laser diode for room temperature operation Z Zhang, M Kushimoto, T Sakai, N Sugiyama, LJ Schowalter, C Sasaoka, ... Applied Physics Express 12 (12), 124003, 2019 | 316 | 2019 |
| Method and apparatus for producing large, single-crystals of aluminum nitride LJ Schowalter, GA Slack, JC Rojo, RT Bondokov, KE Morgan, JA Smart US Patent 8,545,629, 2013 | 235 | 2013 |
| Crystallographic tilting of heteroepitaxial layers JE Ayers, SK Ghandhi, LJ Schowalter Journal of crystal growth 113 (3-4), 430-440, 1991 | 234 | 1991 |
| 270 nm pseudomorphic ultraviolet light-emitting diodes with over 60 mW continuous wave output power JR Grandusky, J Chen, SR Gibb, MC Mendrick, CG Moe, L Rodak, ... Applied Physics Express 6 (3), 032101, 2013 | 207 | 2013 |
| Ultraviolet semiconductor laser diodes on bulk AlN M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ... Journal of Applied Physics 101 (12), 2007 | 201 | 2007 |
| High output power from 260 nm pseudomorphic ultraviolet light-emitting diodes with improved thermal performance JR Grandusky, SR Gibb, MC Mendrick, C Moe, M Wraback, LJ Schowalter Applied physics express 4 (8), 082101, 2011 | 193 | 2011 |
| Resonant nonlinear susceptibility near the GaAs band gap XC Zhang, Y Jin, K Yang, LJ Schowalter Physical review letters 69 (15), 2303, 1992 | 188 | 1992 |
| Epitaxial growth and characterization of CaF2 on Si LJ Schowalter, RW Fathauer, RP Goehner, LG Turner, RW DeBlois, ... Journal of applied physics 58 (1), 302-308, 1985 | 176 | 1985 |
| Large-area AlN substrates for electronic applications: An industrial perspective RT Bondokov, SG Mueller, KE Morgan, GA Slack, S Schujman, MC Wood, ... Journal of Crystal Growth 310 (17), 4020-4026, 2008 | 171 | 2008 |
| Growth and characterization of single crystal insulators on silicon LJ Schowalter, RW Fathauer Critical Reviews in Solid State and Material Sciences 15 (4), 367-421, 1989 | 171 | 1989 |
| Role of elastic scattering in ballistic-electron-emission microscopy of Au/Si (001) and Au/Si (111) interfaces LJ Schowalter, EY Lee Physical Review B 43 (11), 9308, 1991 | 147 | 1991 |
| Molecular beam epitaxy growth and applications of epitaxial fluoride films LJ Schowalter, RW Fathauer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986 | 134 | 1986 |
| Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling S Hashimoto, JL Peng, WM Gibson, LJ Schowalter, RW Fathauer Applied physics letters 47 (10), 1071-1073, 1985 | 129 | 1985 |
| Surface morphology of epitaxial CaF2 films on Si substrates RW Fathauer, LJ Schowalter Applied physics letters 45 (5), 519-521, 1984 | 127 | 1984 |
| Report on the growth of bulk aluminum nitride and subsequent substrate preparation JC Rojo, GA Slack, K Morgan, B Raghothamachar, M Dudley, ... Journal of crystal growth 231 (3), 317-321, 2001 | 123 | 2001 |
| Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements E Silveira, JA Freitas Jr, OJ Glembocki, GA Slack, LJ Schowalter Physical Review B—Condensed Matter and Materials Physics 71 (4), 041201, 2005 | 120 | 2005 |
| Characterization of atomic force microscope tips by adhesion force measurements T Thundat, XY Zheng, GY Chen, SL Sharp, RJ Warmack, LJ Schowalter Applied Physics Letters 63 (15), 2150-2152, 1993 | 117 | 1993 |
| AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN X Hu, J Deng, N Pala, R Gaska, MS Shur, CQ Chen, J Yang, G Simin, ... Applied Physics Letters 82 (8), 1299-1301, 2003 | 113 | 2003 |
