受强制性开放获取政策约束的文章 - Jie Zhang了解详情
无法在其他位置公开访问的文章：13 篇
InAlN/GaN HEMT on Si with fmax= 270 GHz
P Cui, M Jia, H Chen, G Lin, J Zhang, L Gundlach, JQ Xiao, Y Zeng
IEEE Transactions on Electron Devices 68 (3), 994-999, 2021
强制性开放获取政策： US Department of Defense, US National Aeronautics and Space Administration
Ultrathin InGaO thin film transistors by atomic layer deposition
J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin, DY Peide
IEEE Electron Device Letters 44 (2), 273-276, 2022
强制性开放获取政策： US Department of Defense
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
J Zhang, M Jia, MG Sales, Y Zhao, G Lin, P Cui, C Santiwipharat, C Ni, ...
ACS Applied Electronic Materials 3 (12), 5483-5495, 2021
强制性开放获取政策： US Department of Defense, US National Aeronautics and Space Administration
Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition
J Zhang, Z Lin, Z Zhang, K Xu, H Dou, B Yang, A Charnas, D Zheng, ...
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： US Department of Defense
Sub-60 mV/decade switching via hot electron transfer in nanoscale GaN HEMTs
P Cui, G Lin, J Zhang, Y Zeng
IEEE Electron Device Letters 41 (8), 1185-1188, 2020
强制性开放获取政策： US Department of Defense, US National Aeronautics and Space Administration
Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing
J Zhang, G Lin, P Cui, M Jia, Z Li, L Gundlach, Y Zeng
IEEE Transactions on Electron Devices 67 (6), 2346-2351, 2020
强制性开放获取政策： US Department of Defense
Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration
PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ...
IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023
强制性开放获取政策： US Department of Defense
One-Volt TiO₂ Thin Film Transistors with Low-Temperature Process
J Zhang, Y Zhang, P Cui, G Lin, C Ni, Y Zeng
IEEE Electron Device Letters 42 (4), 521-524, 2021
强制性开放获取政策： US Department of Defense
Fluorine anion-doped ultra-thin InGaO transistors overcoming mobility-stability trade-off
J Zhang, Z Zhang, H Dou, Z Lin, K Xu, W Yang, X Zhang, H Wang, PD Ye
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策： US Department of Defense
Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility
J Zhang, Z Zhang, Z Lin, D Zheng, DY Peide
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
强制性开放获取政策： US Department of Defense
High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric
J Zhang, Y Zeng
2022 Device Research Conference (DRC), 1-2, 2022
强制性开放获取政策： US Department of Defense, US National Aeronautics and Space Administration
High-Performance, sub-2 volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics
J Zhang, P Cui, G Lin, Y Zeng
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
强制性开放获取政策： US Department of Defense
Fabrication of a polycrystalline SiGe-and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate
G Lin, D Liang, Z Huang, C Yu, P Cui, J Zhang, J Wang, J Xu, S Chen, ...
Semiconductor Science and Technology 35 (9), 095016, 2020
强制性开放获取政策： US Department of Defense, 国家自然科学基金委员会
可在其他位置公开访问的文章：11 篇
First demonstration of BEOL-compatible ultrathin atomiclayer-deposited InZnO transistors with GHz operation and record high bias-stress stability
D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ...
2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022
强制性开放获取政策： US Department of Defense
Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma
J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, PY Liao, D Zemlyanov, ...
Applied Physics Letters 121 (17), 2022
强制性开放获取政策： US Department of Defense
Performance enhancement of monolayer MoS2 transistors by atomic layer deposition of high-k dielectric assisted by Al2O3 seed layer
G Lin, MQ Zhao, M Jia, J Zhang, P Cui, L Wei, H Zhao, ATC Johnson, ...
Journal of Physics D: Applied Physics 53 (10), 105103, 2019
强制性开放获取政策： US National Science Foundation, US Department of Defense
First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10 11, SS of …
J Zhang, Z Zhang, Z Lin, K Xu, H Dou, B Yang, X Zhang, H Wang, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
强制性开放获取政策： US Department of Defense
Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents
Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, ...
2022 International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2022
强制性开放获取政策： US Department of Defense
Ultrathin indium oxide thin-film transistors with gigahertz operation frequency
A Charnas, J Anderson, J Zhang, D Zheng, D Weinstein, DY Peide
IEEE Transactions on Electron Devices 70 (2), 532-536, 2022
强制性开放获取政策： US Department of Defense
Fabrication of germanium tin microstructures through inductively coupled plasma dry etching
G Lin, P Cui, T Wang, R Hickey, J Zhang, H Zhao, J Kolodzey, Y Zeng
IEEE Transactions on Nanotechnology 20, 846-851, 2021
强制性开放获取政策： US Department of Defense
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