受强制性开放获取政策约束的文章 - Shenwu Zhu了解详情
无法在其他位置公开访问的文章:9 篇
True Nonvolatile High‐Speed DRAM Cells Using Tailored Ultrathin IGZO
Q Hu, C Gu, Q Li, S Zhu, S Liu, Y Li, L Zhang, R Huang, Y Wu
Advanced Materials 35 (20), 2210554, 2023
强制性开放获取政策: 国家自然科学基金委员会
Capacitorless DRAM cells based on high-performance indium-tin-oxide transistors with record data retention and reduced write latency
Q Hu, C Gu, S Zhu, Q Li, A Tong, J Kang, R Huang, Y Wu
IEEE Electron Device Letters 44 (1), 60-63, 2022
强制性开放获取政策: 国家自然科学基金委员会
Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation
Q Hu, Q Li, S Zhu, C Gu, S Liu, R Huang, Y Wu
2022 International Electron Devices Meeting (IEDM), 26.6. 1-26.6. 4, 2022
强制性开放获取政策: 国家自然科学基金委员会
BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V
Q Li, C Gu, S Zhu, Q Hu, W Zhao, X Li, R Huang, Y Wu
2022 International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2022
强制性开放获取政策: 国家自然科学基金委员会
High-performance short-channel top-gate indium-tin-oxide transistors by optimized gate dielectric
C Gu, Q Hu, S Zhu, Q Li, M Zeng, H Liu, J Kang, S Liu, Y Wu
IEEE Electron Device Letters 44 (5), 837-840, 2023
强制性开放获取政策: 国家自然科学基金委员会
High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel
Q Hu, S Zhu, C Gu, Y Wu
Applied Physics Letters 121 (24), 2022
强制性开放获取政策: 国家自然科学基金委员会
First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record Id = 2.05 mA/µm, gm = 1.13 mS/µm and …
Q Li, W Zhao, Q Hu, C Gu, S Zhu, H Liu, R Huang, Y Wu
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策: 国家自然科学基金委员会
1/f noise of short-channel indium tin oxide transistors under stress
C Gu, Q Hu, Q Li, S Zhu, J Kang, Y Wu
Applied Physics Letters 122 (25), 2023
强制性开放获取政策: 国家自然科学基金委员会
First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC …
Q Hu, C Gu, S Liu, M Zeng, S Zhu, J Kang, R Liu, W Zhao, A Tong, Q Li, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策: 国家自然科学基金委员会
可在其他位置公开访问的文章:1 篇
Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress
Q Hu, S Zhu, C Gu, S Liu, M Zeng, Y Wu
Science Advances 8 (51), eade4075, 2022
强制性开放获取政策: 国家自然科学基金委员会
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