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Shavkat Ismailov
Shavkat Ismailov
Urgench branch of Tashkent University of Information Technologies named after Muhammad al-Khwarizmi
在 ubtuit.uz 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Low Energy Ar+ Ions Scattering from SiO2 (001)<Ῑ10> Surface under Grazing Incidence
AS Ashirov, UO Kutliev, S Xakimov, SK Ismailov
Materials Science Forum on January 11, 2022 1049 (2022), 152-157, 2022
202022
Low Energy Ar+ Ion Scattering on InGaP(001) Surface
S Ismailov, U Karimov, M, Kutliev, M Otabaev
e-Journal of Surface Science and Nanotechnology 18, 164-167, 2020
12*2020
Semiconductor solid solutions Ge1-x Snx as a new material for electronics
AS Saidov, SK Ismailov, UP Asatova
Published in International Conference on Information Science and …, 2021
12021
Growing and Studying The Photoelectric and Electrical Properties of Epitaxial Films of Ge1-X Snx Solid Solutions
A Saidov, SN Usmonov, U Asatova, SK Ismailov
Acta of Turin Polytechnic University in Tashkent 9 (1), 93-100, 2019
12019
Жидкофазная эпитаксия твердых растворов (Ge2)1-x(InP)x и (GaAs)1-x-y(Ge2) (ZnSe)y
S Ismailov, A Saidov, A Pazzakov
Технологии, Техника, Инженерия” Международный научный журнал 2 (4), 28-30, 2017
1*2017
Growth of perfect-crystal Si-Si1−x Gex-(Ge2)1−x (InP)x structures from the liquid phase
AS Saidov, EA Koshchanov, AS Razzakov, SK Ismailov
Technical Physics Letters 25, 986-987, 1999
11999
КОМПЬЮТЕРНОЕ МОДЕЛИРОВАНИЯ МАЛОУГЛОВОЕ РАССЕЯНИЯ ИОНОВ AR С ДЕФЕКТНОЙ ПОВЕРХНОСТИ INP(001)
БА Ш.К. Исмаилов, М.К. Каримов, У.О. Кутлиев М.У. Отабаев, Ф.Р. Садуллаева
Acta of Turin Polytechnic University in Tashkent 10 (2), 14-16, 2020
2020
IMITATION MODELING THE DISCRE TION MODELING THE DISCRETE COMMUNICA TE COMMUNICATION CHANEL IN M ANEL IN MATLAB STATEFLOW ON BASIS OF PE OW ON BASIS OF PETROVICH MODEL
IsmailovSh, OII Djabborov Sh.Y.
Chemical Technology, Control and Management 5 (2020), 201-209, 2020
2020
Modeling Discrete Channels Based on Gilbert Model using MATLAB Software
T Rakhimov, S Ismailov, U Matyokubov, U Eschanov, V Kuchkarov
International Journal of Engineering and Advanced Technology (IJEAT) 9 (2 …, 2019
2019
Simulation of parameters of nGe-pSiGe diode structures on TCAD SENTAURUS
A Saidov, U Asatova, S Usmanov
Actual problems modern science education end training in the region …, 2017
2017
Growing of the (Sn {sub 2}){sub 1-x}(InSb){sub x} epitaxial layers on the GaAs substrate from a liquid phase
AS Saidov, UP Asatova, SK Ismailov
2007
Growing of the (Sn2)1-x(InSb)x epitaxial layers on the GaAs substrate from a liquid phase
AS Saidov, UP Asatova, SK Ismailov
2007
Liquid phase epitaxy of solid solutions
AS Saidov, SK Ismailov, UP Asatova
2007
Band structure of (Ge {sub 2}){sub 1-x}(InP){sub x} solid solution; Ehlektronnaya struktura tverdogo rastvora (Ge {sub 2}){sub 1-x}(InP){sub x}
SK Ismailov, AS Saidov, SJ Karajanov
Uzbekiston Fizika Zhurnali 9, 2007
2007
Band structure of (Ge2)1-x(InP)x solid solution
SK Ismailov, AS Saidov, SJ Karajanov
Uzbekiston Fizika Zhurnali 9 (1), 18-23, 2007
2007
Optical properties of (Ge2)1−x (InP)x solid solutions
SK Ismailov, AS Saidov, K Durshimbetov, B Zhollybekov
Technical physics letters 32, 538-541, 2006
2006
Оптические свойства твердого раствора
ШК Исмаилов, АС Саидов, К Дуршимбетов, Б Жоллыбеков
Письма в ЖТФ 32 (12), 2006
2006
Оптические свойства твердого раствора (Ge2)1-x(InP)x
ШК Исмаилов, АС Саидов, К Дуршимбетов, Б Жоллыбеков
Письма в Журнал технической физики 32 (12), 63-70, 2006
2006
Zone structure of (Ge2)1-x (InP)x (0<x<1) solid solution
SK Ismailov, AC Saidov, S Karajanov, E Jaksimov
2005
Some physical properties of semiconductor (Ge {sub 2}){sub 1-x}(InP){sub x} solid solutions; Nekotorye fizicheskie svojstva poluprovodnikovykh tverdykh rastvorov (Ge {sub 2 …
AS Saidov, EA Koshchanov, SK Ismailov, AS Razzakov
2004
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