| Microwave dielectric properties of (ABi) 1/2MoO4 (A= Li, Na, K, Rb, Ag) type ceramics with ultra-low firing temperatures D Zhou, CA Randall, LX Pang, H Wang, J Guo, GQ Zhang, Y Wu, KT Guo, ... Materials Chemistry and Physics 129 (3), 688-692, 2011 | 75 | 2011 |
| Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking X Duan, K Huang, J Feng, J Niu, H Qin, S Yin, G Jiao, D Leonelli, X Zhao, ... IEEE Transactions on Electron Devices 69 (4), 2196-2202, 2022 | 63 | 2022 |
| Low temperature firing microwave dielectric ceramics (K0. 5Ln0. 5) MoO4 (Ln= Nd and Sm) with low dielectric loss D Zhou, LX Pang, J Guo, GQ Zhang, Y Wu, H Wang, X Yao Journal of the European Ceramic Society 31 (15), 2749-2752, 2011 | 54 | 2011 |
| Microwave and Infrared Dielectric Response of Temperature Stable (1−x)BaMoO4–xTiO2 Composite Ceramics J Guo, D Zhou, H Wang, Y Chen, Y Zeng, F Xiang, Y Wu, X Yao Journal of the American Ceramic Society 95 (1), 232-237, 2012 | 51 | 2012 |
| Temperature stable microwave dielectric ceramic 0.3 Li2TiO3–0.7 Li (Zn0. 5Ti1. 5) O4 with ultra-low dielectric loss Y Wu, D Zhou, J Guo, LX Pang, H Wang, X Yao Materials Letters 65 (17-18), 2680-2682, 2011 | 51 | 2011 |
| Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band S Xu, K Han, YC Huang, KH Lee, Y Kang, S Masudy-Panah, Y Wu, D Lei, ... Optics express 27 (19), 26924-26939, 2019 | 35 | 2019 |
| Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018 | 32 | 2018 |
| Ultra-low specific contact resistivity (1.4× 10− 9 Ω· cm2) for metal contacts on in-situ Ga-doped Ge0. 95Sn0. 05 film Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, G Liang, X Gong, YC Yeo Journal of Applied Physics 122 (22), 2017 | 28 | 2017 |
| Microwave dielectric properties and low temperature firing of (1 − x)Li2Zn3Ti4O12 –xLi2TiO3 (0.2 ≤ x ≤ 0.8) ceramics with B2O3–CuO addition Y Wu, D Zhou, J Guo, LX Pang Journal of Materials Science: Materials in Electronics 24, 1505-1510, 2013 | 20 | 2013 |
| High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate D Lei, K Han, Y Wu, Z Liu, X Gong IEEE Journal of the Electron Devices Society 7, 596-600, 2019 | 18 | 2019 |
| Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology S Masudy-Panah, Y Wu, D Lei, A Kumar, YC Yeo, X Gong Journal of Applied Physics 123 (2), 2018 | 17 | 2018 |
| Colossal permittivity and dielectric relaxations in BaTi0. 99 (Nb0. 5Ga0. 5) 0.02 O3 ceramics Y Wu, J Miao, Z Liu, Y Li Ceramics International 41, S846-S850, 2015 | 17 | 2015 |
| First demonstration of complementary FinFETs and tunneling FinFETs co-integrated on a 200 mm GeSnOI substrate: A pathway towards future hybrid nano-electronics systems K Han, Y Wu, YC Huang, S Xu, A Kumar, E Kong, Y Kang, J Zhang, ... 2019 Symposium on VLSI Technology, T182-T183, 2019 | 12 | 2019 |
| Elimination of the parasitic metal resistance in transmission line model for extraction of ultralow specific contact resistivity Y Wu, H Xu, X Gong, YC Yeo IEEE Transactions on Electron Devices 66 (7), 3086-3092, 2019 | 12 | 2019 |
| Sub- Specific Contact Resistivity on P-type Ge and GeSn: In-situ Ga Doping with Ga Ion Implantation at 300 °C, 25 °C, and −100 °C Y Wu, LH Chua, W Wang, K Han, W Zou, T Henry, X Gong 2018 IEEE International Electron Devices Meeting (IEDM), 35.5. 1-35.5. 4, 2018 | 12 | 2018 |
| High field temperature-independent field-effect mobility of amorphous indium–gallium–zinc oxide thin-film transistors: Understanding the importance of equivalent-oxide … K Han, S Samanta, S Xu, Y Wu, X Gong IEEE Transactions on Electron Devices 68 (1), 118-124, 2020 | 11 | 2020 |
| Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25° C to 300° C D Lei, K Han, Y Wu, Z Liu, X Gong Applied Physics Express 12 (4), 041001, 2019 | 11 | 2019 |
| GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,intof 900 µS/µm, and High-Field µeffof 275 cm … D Lei, K Han, KH Lee, YC Huang, W Wang, S Yadav, A Kumar, Y Wu, ... 2018 IEEE Symposium on VLSI Technology, 197-198, 2018 | 11 | 2018 |
| Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10−10Ω-cm2 Y Wu, W Wang, S Masudy-Panah, Y Li, K Han, L He, Z Zhang, D Lei, S Xu, ... 2018 IEEE Symposium on VLSI Technology, 77-78, 2018 | 11 | 2018 |
| IEEE Symposium on VLSI Technology Y Wu, S Lou, W Wang, S Masudy-Panah, X Gong, G Liang, YC Yeo | 11 | 2017 |
Xiao GongNational University of Singapore在 nus.edu.sg 的电子邮件经过验证
