| Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures SO Slipchenko, AA Podoskin, OS Soboleva, NA Pikhtin, TA Bagaev, ... Journal of Applied Physics 121 (5), 2017 | 32 | 2017 |
| High-Power Laser Thyristors With High Injection Efficiency ( –910 nm) SO Slipchenko, AA Podoskin, AV Rozhkov, NA Pikhtin, IS Tarasov, ... IEEE Photonics Technology Letters 27 (3), 307-310, 2014 | 31 | 2014 |
| High-power laser diodes (λ= 808–850 nm) based on asymmetric separate-confinement heterostructures AY Andreev, AY Leshko, AV Lyutetskiĭ, AA Marmalyuk, TA Nalyot, ... Semiconductors 40, 611-614, 2006 | 31 | 2006 |
| High-power pulse semiconductor laser-thyristor emitting at 900-nm wavelength SO Slipchenko, AA Podoskin, AV Rozhkov, NA Pikhtin, IS Tarasov, ... IEEE Photonics Technology Letters 25 (17), 1664-1667, 2013 | 29 | 2013 |
| Evaluation of elastic constants of AlN, GaN, and InN AA Marmalyuk, RK Akchurin, VA Gorbylev Inorganic materials 34 (7), 691-694, 1998 | 26 | 1998 |
| Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides AA Marmalyuk, YL Ryaboshtan, PV Gorlachuk, MA Ladugin, AA Padalitsa, ... Quantum Electronics 47 (3), 272, 2017 | 25 | 2017 |
| Laser diodes (λ= 0.98 μm) with a narrow radiation pattern and low internal optical losses SO Slipchenko, NA Pikhtin, NV Fetisova, MA Khomylev, AA Marmalyuk, ... Technical Physics Letters 29, 980-983, 2003 | 24 | 2003 |
| High peak optical power of 1ns pulse duration from laser diodes–low voltage thyristor vertical stack SO Slipchenko, AA Podoskin, VS Golovin, DN Romanovich, ... Optics Express 27 (22), 31446-31455, 2019 | 21 | 2019 |
| Stimulated emission at transitions between Wannier–Stark ladders in semiconductor superlattices AA Andronov, EP Dodin, DI Zinchenko, YN Nozdrin, MA Ladugin, ... JETP letters 102, 207-211, 2015 | 21 | 2015 |
| On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range SO Slipchenko, AA Podoskin, VV Vasil’eva, NA Pikhtin, AV Rozhkov, ... Semiconductors 48, 697-699, 2014 | 21 | 2014 |
| Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures PV Bulaev, AA Marmalyuk, AA Padalitsa, DB Nikitin, ID Zalevsky, ... Journal of crystal growth 248, 114-118, 2003 | 20 | 2003 |
| Investigation of indium segregation in InGaAs/(Al) GaAs quantum wells grown by MOCVD AA Marmalyuk, OI Govorkov, AV Petrovsky, DB Nikitin, AA Padalitsa, ... Journal of crystal growth 237, 264-268, 2002 | 20 | 2002 |
| Tunnel-coupled laser diode microarray as a kW-level 100-ns pulsed optical power source (λ= 910 nm) SO Slipchenko, AA Podoskin, DA Veselov, VA Strelets, NA Rudova, ... IEEE Photonics Technology Letters 34 (1), 35-38, 2021 | 19 | 2021 |
| Advanced AlGaAs/GaAs heterostructures grown by MOVPE MA Ladugin, IV Yarotskaya, TA Bagaev, KY Telegin, AY Andreev, ... Crystals 9 (6), 305, 2019 | 19 | 2019 |
| Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact SO Slipchenko, AA Podoskin, OS Soboleva, NA Pikhtin, TA Bagaev, ... Optics Express 24 (15), 16500-16511, 2016 | 19 | 2016 |
| The temperature dependence of internal optical losses in semiconductor lasers (λ= 900–920 nm) NA Pikhtin, SO Slipchenko, IS Shashkin, MA Ladugin, AA Marmalyuk, ... Semiconductors 44, 1365-1369, 2010 | 19 | 2010 |
| A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD DA Vinokurov, VP Konyaev, MA Ladugin, AV Lyutetskiy, AA Marmalyuk, ... Semiconductors 44, 238-242, 2010 | 19 | 2010 |
| SO Slip chenko, MA Khomylev, and IS Tarasov AY Andreev, AY Leshko, AV Lyutetskii, AA Marmalyuk, TA Nalet, ... Fiz. Tekh. Poluprovodn 40, 628, 2006 | 19 | 2006 |
| Transport in weak barrier superlattices and the problem of the terahertz Bloch oscillator AA Andronov, MN Drozdov, DI Zinchenko, AA Marmalyuk, IM Nefedov, ... Physics-uspekhi 46 (7), 755, 2003 | 19 | 2003 |
| Theoretical calculation of the Debye temperature and temperature dependence of heat capacity of aluminum, gallium, and indium nitrides AA Marmalyuk, RK Akchurin, VA Gorbylev High temperature 36 (5), 817-819, 1998 | 18 | 1998 |
