High-quality MOSFETs with ultrathin LPCVD gate SiO/sub 2 J Ahn, W Ting, DL Kwong IEEE electron device letters 13 (4), 186-188, 1992 | 234 | 1992 |
Tungsten nanowires and their field electron emission properties YH Lee, CH Choi, YT Jang, EK Kim, BK Ju, NK Min, JH Ahn Applied Physics Letters 81 (4), 745-747, 2002 | 218 | 2002 |
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012 | 159 | 2012 |
A simple approach in fabricating chemical sensor using laterally grown multi-walled carbon nanotubes YT Jang, SI Moon, JH Ahn, YH Lee, BK Ju Sensors and Actuators B: Chemical 99 (1), 118-122, 2004 | 157 | 2004 |
Realization of gated field emitters for electrophotonic applications using carbon nanotube line emitters directly grown into submicrometer holes YH Lee, YT Jang, DH Kim, JH Ahn, B Ju Advanced Materials 13 (7), 479-482, 2001 | 130 | 2001 |
Furnace nitridation of thermal SiO/sub 2/in pure N/sub 2/O ambient for ULSI MOS applications J Ahn, W Ting, DL Kwong IEEE electron device letters 13 (2), 117-119, 1992 | 112 | 1992 |
Microstructure and magnetic properties of nanosized Fe–Co alloy powders synthesized by mechanochemical and mechanical alloying process BH Lee, BS Ahn, DG Kim, ST Oh, H Jeon, J Ahn, Y Do Kim Materials Letters 57 (5-6), 1103-1107, 2003 | 104 | 2003 |
Effect of NH3 and thickness of catalyst on growth of carbon nanotubes using thermal chemical vapor deposition YT Jang, JH Ahn, YH Lee, BK Ju Chemical Physics Letters 372 (5-6), 745-749, 2003 | 92 | 2003 |
Boronic acid library for selective, reversible near-infrared fluorescence quenching of surfactant suspended single-walled carbon nanotubes in response to glucose K Yum, JH Ahn, TP McNicholas, PW Barone, B Mu, JH Kim, RM Jain, ... Acs Nano 6 (1), 819-830, 2012 | 90 | 2012 |
Resistance switching characteristics for nonvolatile memory operation of binary metal oxides IS Park, KR Kim, S Lee, J Ahn Japanese journal of applied physics 46 (4S), 2172, 2007 | 76 | 2007 |
MOS characteristics of ultrathin SiO/sub 2/prepared by oxidizing Si in N/sub 2/O W Ting, GQ Lo, J Ahn, TY Chu, DL Kwong IEEE electron device letters 12 (8), 416-418, 1991 | 74 | 1991 |
Synthesis of Ag-ZnO core-shell nanoparticles with enhanced photocatalytic activity through atomic layer deposition S Seong, IS Park, YC Jung, T Lee, SY Kim, JS Park, JH Ko, J Ahn Materials & Design 177, 107831, 2019 | 67 | 2019 |
Transduction of glycan–lectin binding using near-infrared fluorescent single-walled carbon nanotubes for glycan profiling NF Reuel, JH Ahn, JH Kim, J Zhang, AA Boghossian, LK Mahal, ... Journal of the American Chemical Society 133 (44), 17923-17933, 2011 | 65 | 2011 |
Study of the composition of thin dielectrics grown on Si in a pure N2O ambient TY Chu, W Ting, JH Ahn, S Lin, DL Kwong Applied physics letters 59 (12), 1412-1414, 1991 | 62 | 1991 |
Direct fermentation route for the production of acrylic acid HS Chu, JH Ahn, J Yun, IS Choi, TW Nam, KM Cho Metabolic engineering 32, 23-29, 2015 | 58 | 2015 |
Dielectric Stacking Effect ofandin Metal–Insulator–Metal Capacitor IS Park, K Ryu, J Jeong, J Ahn IEEE Electron Device Letters 34 (1), 120-122, 2012 | 55 | 2012 |
Atomic layer deposition of Y 2 O 3 films using heteroleptic liquid (iPrCp) 2 Y (iPr-amd) precursor IS Park, YC Jung, S Seong, J Ahn, J Kang, W Noh, C Lansalot-Matras Journal of Materials Chemistry C 2 (43), 9240-9247, 2014 | 54 | 2014 |
High quality ultrathin gate dielectrics formation by thermal oxidation of Si in N 2 O J Ahn, W Ting, T Chu, SN Lin, DL Kwong Journal of the Electrochemical Society 138 (9), L39, 1991 | 54 | 1991 |
Oxynitride gate dielectrics for p/sup+/-polysilicon gate MOS devices AB Joshi, J Ahn, DL Kwong IEEE electron device letters 14 (12), 560-562, 1993 | 52 | 1993 |
Comparison of the chemical structure and composition between N2O oxides and reoxidized NH3‐nitrided oxides M Bhat, J Ahn, DL Kwong, M Arendt, JM White Applied physics letters 64 (9), 1168-1170, 1994 | 49 | 1994 |