| III-V/Ge MOS device technologies for low power integrated systems S Takagi, M Noguchi, M Kim, SH Kim, CY Chang, M Yokoyama, K Nishi, ... Solid-State Electronics 125, 82-102, 2016 | 58 | 2016 |
| Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process M Ke, M Takenaka, S Takagi ACS Applied Electronic Materials 1 (3), 311-317, 2019 | 27 | 2019 |
| Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation M Ke, X Yu, C Chang, M Takenaka, S Takagi Applied Physics Letters 109 (3), 2016 | 25 | 2016 |
| Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation M Ke, X Yu, R Zhang, J Kang, C Chang, M Takenaka, S Takagi Microelectronic Engineering 147, 244-248, 2015 | 21 | 2015 |
| Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation M Ke, M Takenaka, S Takagi IEEE Journal of the Electron Devices Society 6, 950-955, 2018 | 19 | 2018 |
| Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀. ₇₈Ge₀. ₂₂ Structures by Trimethylaluminum Treatment TE Lee, M Ke, K Toprasertpong, M Takenaka, S Takagi IEEE Transactions on Electron Devices 67 (10), 4067-4072, 2020 | 18 | 2020 |
| Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation TE Lee, K Kato, M Ke, M Takenaka, S Takagi 2019 Symposium on VLSI Technology, T100-T101, 2019 | 18 | 2019 |
| Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0. 62Ge0. 38 gate stacks with high temperature post-metallization annealing TE Lee, M Ke, K Kato, M Takenaka, S Takagi Journal of Applied Physics 127 (18), 2020 | 10 | 2020 |
| Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers M Ke, M Takenaka, S Takagi Microelectronic Engineering 178, 132-136, 2017 | 10 | 2017 |
| Impact of metal gate electrodes on electrical properties of Y2O3/Si0. 78Ge0. 22 gate stacks TE Lee, K Kato, M Ke, K Toprasertpong, M Takenaka, S Takagi Microelectronic Engineering 214, 87-92, 2019 | 9 | 2019 |
| Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers M Ke, M Takenaka, S Takagi 2017 47th European Solid-State Device Research Conference (ESSDERC), 296-299, 2017 | 9 | 2017 |
| Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces M Ke, P Cheng, K Kato, M Takenaka, S Takagi 2018 IEEE International Electron Devices Meeting (IEDM), 34.3. 1-34.3. 4, 2018 | 8 | 2018 |
| Effectiveness of synchronization and cooperative behavior of multiple robots based on swarm AI T Hiejima, S Kawashima, M Ke, T Kawahara 2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 341-344, 2019 | 4 | 2019 |
| Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process M Ke, M Takenaka, S Takagi IEEE Transactions on Electron Devices 66 (12), 5060-5064, 2019 | 4 | 2019 |
| Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique T Xie, M Ke, K Ueno, K Watanabe, T Taniguchi, N Aoki Applied Physics Letters 124 (21), 2024 | 3 | 2024 |
| Enhanced contact properties of MoTe2-FET via laser-induced heavy doping T Xie, K Fukuda, M Ke, P Krüger, K Ueno, GH Kim, N Aoki Japanese Journal of Applied Physics 62 (SC), SC1010, 2022 | 3 | 2022 |
| Improvement of generalization performance for timber health monitoring using machine learning K Suzuki, T Ito, K Koike, T Kawahara, M Ke, K Mori 2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 197-200, 2020 | 3 | 2020 |
| Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM Y Kishi, A Yamada, M Ke, T Kawahara IEEE Transactions on Magnetics 58 (5), 1-10, 2022 | 2 | 2022 |
| Damage-position identification of wooden-house models for structural health monitoring using machine learning K Koike, K Suzuki, M Ke, K Mori, T Ito, T Kawahara 2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 114-117, 2020 | 2 | 2020 |
| MOS Interface Control Technologies for Advanced III-V/Ge Devices S Takagi, CY Chang, M Yokoyama, K Nishi, R Zhang, M Ke, JH Han, ... ECS Transactions 69 (5), 37, 2015 | 2 | 2015 |
