受强制性开放获取政策约束的文章 - Subhashish Bhattacharya了解详情
无法在其他位置公开访问的文章：87 篇
Solid-state transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters
S Madhusoodhanan, A Tripathi, D Patel, K Mainali, A Kadavelugu, ...
IEEE Transactions on Industry Applications 51 (4), 3343-3360, 2015
强制性开放获取政策： US Department of Energy
Analysis of the modulation strategy for the minimization of the leakage current in the PV grid-connected cascaded multilevel inverter
V Sonti, S Jain, S Bhattacharya
IEEE Transactions on Power Electronics 32 (2), 1156-1169, 2016
强制性开放获取政策： Department of Science & Technology, India
Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High
A Anurag, S Acharya, Y Prabowo, G Gohil, S Bhattacharya
IEEE Transactions on Power Electronics 34 (6), 5256-5267, 2018
强制性开放获取政策： US Department of Defense
Design considerations of a 15-kV SiC IGBT-based medium-voltage high-frequency isolated DC–DC converter
AK Tripathi, K Mainali, DC Patel, A Kadavelugu, S Hazra, S Bhattacharya, ...
IEEE Transactions on Industry Applications 51 (4), 3284-3294, 2015
强制性开放获取政策： US Department of Energy
Identification and predictive analysis of a multi-area WECC power system model using synchrophasors
G Chavan, M Weiss, A Chakrabortty, S Bhattacharya, A Salazar, ...
IEEE Transactions on Smart Grid 8 (4), 1977-1986, 2016
强制性开放获取政策： US National Science Foundation
Design and evaluation of isolated gate driver power supply for medium voltage converter applications
K Mainali, S Madhusoodhanan, A Tripathi, K Vechalapu, A De, ...
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 1632-1639, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
An optimized circulating current control method based on PR and PI controller for MMC applications
S Isik, M Alharbi, S Bhattacharya
IEEE Transactions on Industry Applications 57 (5), 5074-5085, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
A MV intelligent gate driver for 15kV SiC IGBT and 10kV SiC MOSFET
A Tripathi, K Mainali, S Madhusoodhanan, A Yadav, K Vechalapu, ...
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2076-2082, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Medium voltage (≥ 2.3 kV) high frequency three-phase two-level converter design and demonstration using 10 kV SiC MOSFETs for high speed motor drive applications
S Madhusoodhanan, K Mainali, A Tripathi, K Vechalapu, S Bhattacharya
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 1497-1504, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Harmonic analysis and controller design of 15 kV SiC IGBT-based medium-voltage grid-connected three-phase three-level NPC converter
S Madhusoodhanan, K Mainali, A Tripathi, D Patel, A Kadavelugu, ...
IEEE Transactions on Power Electronics 32 (5), 3355-3369, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
Power loss analysis of medium-voltage three-phase converters using 15-kV/40-A SiC N-IGBT
S Madhusoodhanan, K Mainali, AK Tripathi, A Kadavelugu, D Patel, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 902-917, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy
A sinusoidal current control strategy based on harmonic voltage injection for harmonic loss reduction of PMSMs with non-sinusoidal back-EMF
H Kim, Y Han, K Lee, S Bhattacharya
IEEE Transactions on Industry Applications 56 (6), 7032-7043, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
A Gen-3 10-kV SiC MOSFET-based medium-voltage three-phase dual active bridge converter enabling a mobile utility support equipment solid state transformer
A Anurag, S Acharya, S Bhattacharya, TR Weatherford, AA Parker
IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (2 …, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs
A Kadavelugu, K Mainali, D Patel, S Madhusoodhanan, A Tripathi, ...
2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1396-1403, 2015
强制性开放获取政策： US Department of Energy
An accurate calorimetric loss measurement method for SiC MOSFETs
A Anurag, S Acharya, S Bhattacharya
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
强制性开放获取政策： US Department of Defense
Autonomous inverter voltage regulation in a low voltage distribution network
MG Kashani, S Bhattacharya, J Matamoros, D Kaiser, M Cespedes
IEEE Transactions on Smart Grid 9 (6), 6909-6917, 2017
强制性开放获取政策： US National Science Foundation
Modelling, design and analysis of three limb high frequency transformer including transformer parasitics, for SiC Mosfet based three port DAB
R Chattopadhyay, MA Juds, PR Ohodnicki, S Bhattacharya
IECON 2016-42nd Annual Conference of the IEEE Industrial Electronics Society …, 2016
强制性开放获取政策： US Department of Energy
A novel submodule level fault-tolerant approach for MMC with integrated scale-up architecture
M Alharbi, S Isik, S Bhattacharya
IEEE Journal of Emerging and Selected Topics in Industrial Electronics 2 (3 …, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Hybrid energy storage system comprising of battery and ultra-capacitor for smoothing of oscillating wave energy
S Hazra, S Bhattacharya
2016 IEEE energy conversion congress and exposition (ECCE), 1-8, 2016
强制性开放获取政策： US National Science Foundation
Mode analysis, transformer saturation, and fault diagnosis technique for an open-circuit fault in a three-phase DAB converter
SK Rastogi, SS Shah, BN Singh, S Bhattacharya
IEEE Transactions on Power Electronics 38 (6), 7644-7660, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
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