Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors JK Saha, RN Bukke, NN Mude, J Jang Nature Scientific Reports 10 (1), 1-11, 2020 | 90 | 2020 |
Lanthanum doping in zinc oxide for highly reliable thin-film transistors on flexible substrates by spray pyrolysis RN Bukke, JK Saha, NN Mude, Y Kim, S Lee, J Jang ACS applied materials & interfaces 12 (31), 35164-35174, 2020 | 52 | 2020 |
Highly Stable, Nanocrystalline, ZnO Thin-Film Transistor by Spray Pyrolysis Using High-K Dielectric JK Saha, MM Billah, RN Bukke, YG Kim, NN Mude, AB Siddik, MM Islam, ... IEEE Transactions on Electron Devices 67 (3), 1021-1026, 2020 | 51 | 2020 |
Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOx Gate Insulator RN Bukke, C Avis, MN Naik, J Jang IEEE Electron Device Letters 39 (3), 371-374, 2018 | 50 | 2018 |
Improvement in performance of solution processed indium–zinc–tin oxide thin-film transistors by UV/O3 treatment on zirconium oxide gate insulator BR Naik, C Avis, MDH Chowdhury, T Kim, T Lin, J Jang J. Jpn. J. Appl. Phys 55, 03CC02, 2016 | 44 | 2016 |
Solution-Processed Amorphous In–Zn–Sn Oxide Thin-Film Transistor Performance Improvement by Solution-Processed Y2O3Passivation RN Bukke, C Avis, J Jang IEEE Electron Device Letters 37 (4), 433-436, 2016 | 43 | 2016 |
High performance of a‐IZTO TFT by purification of the semiconductor oxide precursor RN Bukke, NN Mude, JK Saha, J Jang Advanced Materials Interfaces 6 (13), 1900277, 2019 | 41 | 2019 |
Spray‐pyrolyzed high‐k zirconium‐aluminum‐oxide dielectric for high performance metal‐oxide thin‐film transistors for low power displays MM Islam, JK Saha, MM Hasan, J Kim, RN Bukke, A Ali, J Jang Advanced Materials Interfaces 8 (16), 2100600, 2021 | 38 | 2021 |
Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment NN Mude, RN Bukke, JK Saha, C Avis, J Jang Advanced Electronic Materials 5 (12), 1900768, 2019 | 38 | 2019 |
Solution-Processed La Alloyed ZrOx High-k Dielectric for High-Performance ZnO Thin-Film Transistors MM Islam, JK Saha, RN Bukke, MM Hasan, MM Billah, NN Mude, A Ali, ... IEEE Electron Device Letters 41 (7), 1021-1024, 2020 | 33 | 2020 |
Remarkable Stability Improvement of ZnO TFT with Al2O3 Gate Insulator by Yttrium Passivation with Spray Pyrolysis JK Saha, RN Bukke, NN Mude, J Jang Nanomaterials 10 (5), 976, 2020 | 31 | 2020 |
Improvement of Metal-Oxide Films by Post Atmospheric Ar/O2 Plasma Treatment for Thin Film Transistors with High Mobility and Excellent Stability RN Bukke, NN Mude, MM Islam, J Jang Applied Surface Science, 150947, 2021 | 28 | 2021 |
Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis JK Saha, RN Bukke, J Jang Advanced Electronic Materials, 2000594, 2020 | 25 | 2020 |
Effect of Hf Alloy in ZrOx Gate Insulator for Solution Processed a-IZTO Thin Film Transistors RN Bukke, NN Mude, J Lee, C Avis, J Jang IEEE Electron Device Letters 40 (1), 32-35, 2018 | 24 | 2018 |
High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring NN Mude, RN Bukke, J Mude, Jang ACS Applied Materials and Interfaces 13 (17), 20277–20287, 2021 | 20 | 2021 |
Artificial ITO Synaptic Transistor by Inkjet Printing Using Solution‐Processed ZrOx Gate Dielectric Y Goo Kim, D Lv, J Huang, R Naik Bukke, H Chen, J Jang physica status solidi (a), 2020 | 16 | 2020 |
Transparent, P‐channel CuISn Thin‐film Transistor with Field Effect Mobility of 45 cm2 V–1 s–1 and Excellent Bias Stability NN Mude, RN Bukke, J Jang Advanced Materials Technologies 7 (8), 2101434, 2022 | 15 | 2022 |
Performance Improvement for Spray-Coated ZnO TFT by F Doping With Spray-Coated Zr-Al-O Gate Insulator RNB JK Saha, A Ali, YG Kim, MM Islam, JJang IEEE Transaction on Electron Devices, 2021 | 15 | 2021 |
Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment MM Hasan, MM Islam, RN Bukke, E Tokumitsu, HY Chu, SC Kim, J Jang IEEE Electron Device Letters 43 (5), 725-728, 2022 | 14 | 2022 |
Nano-Scale Ga2O3 Interface Engineering for High-Performance of ZnO-Based Thin-Film Transistors RN Bukke, NN Mude, J Bae, J Jang ACS Applied Materials & Interfaces 14 (36), 41508-41519, 2022 | 12 | 2022 |