受强制性开放获取政策约束的文章 - Satoshi Kamiyama了解详情
无法在其他位置公开访问的文章：16 篇
Improvement of 650-nm red-emitting GaIn0. 17N/GaIn0. 38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration
R Takahashi, R Fujiki, K Hozo, R Hiramatsu, M Matsukura, T Kojima, ...
Applied Physics Letters 120 (14), 2022
强制性开放获取政策： Japan Science and Technology Agency
Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters
A Fadil, Y Ou, D Iida, S Kamiyama, PM Petersen, H Ou
Nanoscale 8 (36), 16340-16348, 2016
强制性开放获取政策： Innovation Fund Denmark
Effects of Mg dopant in Al-composition-graded Al x Ga1− x N (0.45≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction
K Sato, K Yamada, K Sakowski, M Iwaya, T Takeuchi, S Kamiyama, ...
Applied Physics Express 14 (9), 096503, 2021
强制性开放获取政策： Narodowe Centrum Nauki
Influence of near-field coupling from Ag surface plasmons on InGaN/GaN quantum-well photoluminescence
A Fadil, D Iida, Y Chen, Y Ou, S Kamiyama, H Ou
Journal of Luminescence 175, 213-216, 2016
强制性开放获取政策： Innovation Fund Denmark
Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
JW Sun, V Jokubavicius, R Liljedahl, R Yakimova, S Juillaguet, ...
Thin Solid Films 522, 33-35, 2012
强制性开放获取政策： Swedish Research Council
Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN
K Shojiki, M Shimokawa, S Iwayama, T Omori, S Teramura, A Yamaguchi, ...
Applied Physics Express 15 (5), 051004, 2022
强制性开放获取政策： Japan Science and Technology Agency
Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation
R Kondo, A Yabutani, T Omori, K Yamada, E Matsubara, R Hasegawa, ...
Applied Physics Letters 121 (25), 2022
强制性开放获取政策： Japan Science and Technology Agency
Hydrogen in-situ etching of GaN surface to reduce non-radiative recombination centers in 510-nm GaInN/GaN quantum-wells
R Fujiki, R Takahashi, R Hiramatsu, K Hozo, DP Han, M Iwaya, ...
Journal of Crystal Growth 593, 126751, 2022
强制性开放获取政策： Japan Science and Technology Agency
Superlattice-induced variations in morphological and emission properties of GaInN/GaN multiquantum nanowire-based micro-LEDs
S Inaba, W Lu, K Ito, S Katsuro, N Nakayama, A Shima, Y Jinno, ...
ACS Applied Materials & Interfaces 14 (44), 50343-50353, 2022
强制性开放获取政策： 国家自然科学基金委员会, Japan Science and Technology Agency
Pre-trimethylindium Flow Treatment of GaInN/GaN Quantum Wells to Suppress Surface Defect Incorporation and Improve Efficiency
DP Han, M Iwaya, T Takeuchi, S Kamiyama
ACS Applied Materials & Interfaces 14 (22), 26264-26270, 2022
强制性开放获取政策： Japan Science and Technology Agency
Photoluminescence and Raman spectroscopy characterization of boron-and nitrogen-doped 6H silicon carbide
YY Ou, V Jokubavicius, C Liu, RW Berg, MK Linnarsson, S Kamiyama, ...
Materials Science Forum 717, 233-236, 2012
强制性开放获取政策： Swedish Research Council
High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning
K Shibata, T Nagasawa, K Kobayashi, R Watanabe, T Tanaka, T Takeuchi, ...
Applied Physics Express 15 (11), 112007, 2022
强制性开放获取政策： Japan Science and Technology Agency
A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water
E Matsubara, R Hasegawa, T Nishibayashi, A Yabutani, R Yamada, ...
Applied Physics Express 15 (11), 116502, 2022
强制性开放获取政策： Japan Science and Technology Agency
Growth and light properties of fluorescent SiC for white LEDs
M Syväjärvi, R Yakimova, M Iwaya, T Takeuchi, I Akasaki, S Kamiyama
Materials Science Forum 717, 87-92, 2012
强制性开放获取政策： Swedish Research Council
Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers
JW Sun, S Kamiyama, R Yakimova, M Syväjärvi
Materials Science Forum 740, 490-493, 2013
强制性开放获取政策： Swedish Research Council
On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
V Jokubavicius, B Lundqvist, P Hens, R Liljedahl, R Yakimova, ...
Materials Science Forum 717, 193-196, 2012
强制性开放获取政策： Swedish Research Council
可在其他位置公开访问的文章：14 篇
Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al 2 O 3
W Lu, Y Iwasa, Y Ou, D Jinno, S Kamiyama, PM Petersen, H Ou
RSC advances 7 (14), 8090-8097, 2017
强制性开放获取政策： Innovation Fund Denmark
Donor-acceptor-pair emission characterization in NB doped fluorescent SiC
Y Ou, V Jokubavicius, S Kamiyama, C Liu, RW Berg, M Linnarsson, ...
Optical Materials Express 1 (8), 1439-1446, 2011
强制性开放获取政策： Swedish Research Council
White light emission from fluorescent SiC with porous surface
W Lu, Y Ou, EM Fiordaliso, Y Iwasa, V Jokubavicius, M Syväjärvi, ...
Scientific reports 7 (1), 9798, 2017
强制性开放获取政策： Innovation Fund Denmark
Temperature-dependent photoluminescence properties of porous fluorescent SiC
W Lu, AT Tarekegne, Y Ou, S Kamiyama, H Ou
Scientific reports 9 (1), 16333, 2019
强制性开放获取政策： Innovation Fund Denmark
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