Single-electron transport through single dopants in a dopant-rich environment M Tabe, D Moraru, M Ligowski, M Anwar, R Jablonski, Y Ono, T Mizuno Physical review letters 105 (1), 016803, 2010 | 134 | 2010 |
Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope M Ligowski, D Moraru, M Anwar, T Mizuno, R Jablonski, M Tabe Applied Physics Letters 93 (14), 2008 | 101 | 2008 |
Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires D Moraru, Y Ono, H Inokawa, M Tabe Physical Review B—Condensed Matter and Materials Physics 76 (7), 075332, 2007 | 87 | 2007 |
Atom devices based on single dopants in silicon nanostructures D Moraru, A Udhiarto, M Anwar, R Nowak, R Jablonski, E Hamid, ... Nanoscale research letters 6, 1-9, 2011 | 83 | 2011 |
Electron-tunneling operation of single-donor-atom transistors at elevated temperatures E Hamid, D Moraru, Y Kuzuya, T Mizuno, LT Anh, H Mizuta, M Tabe Physical Review B—Condensed Matter and Materials Physics 87 (8), 085420, 2013 | 68 | 2013 |
Transport spectroscopy of coupled donors in silicon nano-transistors D Moraru, A Samanta, LT Anh, T Mizuno, H Mizuta, M Tabe Scientific reports 4 (1), 6219, 2014 | 55 | 2014 |
Single-electron transfer by inter-dopant coupling tuning in doped nanowire silicon-on-insulator field-effect transistors D Moraru, M Ligowski, K Yokoi, T Mizuno, M Tabe Applied physics express 2 (7), 071201, 2009 | 44 | 2009 |
Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors E Hamid, D Moraru, JC Tarido, S Miki, T Mizuno, M Tabe Applied Physics Letters 97 (26), 2010 | 39 | 2010 |
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors A Samanta, M Muruganathan, M Hori, Y Ono, H Mizuta, M Tabe, D Moraru Applied Physics Letters 110 (9), 2017 | 36 | 2017 |
Single-gated single-electron transfer in nonuniform arrays of quantum dots K Yokoi, D Moraru, M Ligowski, M Tabe Japanese Journal of Applied Physics 48 (2R), 024503, 2009 | 36 | 2009 |
Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope R Nowak, D Moraru, T Mizuno, R Jablonski, M Tabe Applied Physics Letters 102 (8), 2013 | 34 | 2013 |
Observation of discrete dopant potential and its application to Si single-electron devices M Tabe, D Moraru, M Ligowski, M Anwar, K Yokoi, R Jablonski, T Mizuno Thin Solid Films 518 (6), S38-S43, 2010 | 34 | 2010 |
Effect of electron injection into phosphorus donors in silicon-on-insulator channel observed by Kelvin probe force microscopy M Anwar, R Nowak, D Moraru, A Udhiarto, T Mizuno, R Jablonski, M Tabe Applied Physics Letters 99 (21), 2011 | 33 | 2011 |
Phosphorous doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film T Momose, A Nakamura, M Daniel, M Shimomura Aip Advances 8 (2), 2018 | 32 | 2018 |
Single‐photon detection by Si single‐electron FETs M Tabe, A Udhiarto, D Moraru, T Mizuno physica status solidi (a) 208 (3), 646-651, 2011 | 30 | 2011 |
Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors A Udhiarto, D Moraru, T Mizuno, M Tabe Applied Physics Letters 99 (11), 2011 | 28 | 2011 |
Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes M Tabe, HN Tan, T Mizuno, M Muruganathan, H Mizuta, R Nuryadi, ... Applied Physics Letters 108 (9), 2016 | 27 | 2016 |
Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope M Anwar, Y Kawai, D Moraru, R Nowak, R Jablonski, T Mizuno, M Tabe Japanese Journal of Applied Physics 50 (8S3), 08LB10, 2011 | 26 | 2011 |
Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions A Udhiarto, D Moraru, S Purwiyanti, Y Kuzuya, T Mizuno, H Mizuta, ... Applied physics express 5 (11), 112201, 2012 | 24 | 2012 |
Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy K Tyszka, D Moraru, A Samanta, T Mizuno, R Jabłoński, M Tabe Journal of Applied Physics 117 (24), 2015 | 19 | 2015 |