| Amorphous IGZO TFTs featuring Extremely-Scaled Channel Thickness and 38 nm Channel Length: Achieving Record High of 125 at VDS of 1 V and … S Samanta, K Han, C Sun, C Wang, AVY Thean, X Gong 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 57 | 2020 |
| First demonstration of BEOL-compatible ferroelectric TCAM featuring a-IGZO Fe-TFTs with large memory window of 2.9 V, scaled channel length of 40 nm, and high endurance of 10 8 … C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 41 | 2021 |
| Demonstration of ferroelectricity in Al-doped HfO₂ with a low thermal budget of 500° C J Zhou, Z Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, X Gong IEEE Electron Device Letters 41 (7), 1130-1133, 2020 | 36 | 2020 |
| First demonstration of oxide semiconductor nanowire transistors: A novel digital etch technique, IGZO channel, nanowire width down to~ 20 nm, and I on exceeding 1300 μA/μm K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 35 | 2021 |
| Temperature-dependent operation of InGaZnO ferroelectric thin-film transistors with a metal-ferroelectric-metal-insulator-semiconductor structure C Sun, Z Zheng, K Han, S Samanta, J Zhou, Q Kong, J Zhang, H Xu, ... IEEE Electron Device Letters 42 (12), 1786-1789, 2021 | 25 | 2021 |
| A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film Z Zhou, J Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, Z Zheng, H Ni, ... IEEE Electron Device Letters 41 (12), 1837-1840, 2020 | 25 | 2020 |
| Amorphous InGaZnO thin-film transistors with sub-10-nm channel thickness and ultrascaled channel length S Samanta, K Han, C Sun, C Wang, A Kumar, AVY Thean, X Gong IEEE Transactions on Electron Devices 68 (3), 1050-1056, 2021 | 23 | 2021 |
| Indium-gallium-zinc-oxide (IGZO) nanowire transistors K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ... IEEE Transactions on Electron Devices 68 (12), 6610-6616, 2021 | 18 | 2021 |
| Highly scaled InGaZnO ferroelectric field-effect transistors and ternary content-addressable memory C Sun, K Han, S Samanta, Q Kong, J Zhang, H Xu, X Wang, A Kumar, ... IEEE Transactions on Electron Devices 69 (9), 5262-5269, 2022 | 17 | 2022 |
| Low-power and scalable retention-enhanced IGZO TFT eDRAM-based charge-domain computing J Liu#, C Sun#, W Tang, Z Zheng, Y Liu, H Yang, C Jiang, K Ni, X Gong, ... 2021 IEEE International Electron Devices Meeting (IEDM), 21.1. 1-21.1. 4, 2021 | 17 | 2021 |
| Temperature Dependence of Ferroelectricity in Al-Doped HfO2 Featuring a High Pr of 23.7 μC/cm2 J Zhou, Z Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, X Gong IEEE Transactions on Electron Devices 67 (12), 5633-5638, 2020 | 16 | 2020 |
| First demonstration of complementary FinFETs and tunneling FinFETs co-integrated on a 200 mm GeSnOI substrate: A pathway towards future hybrid nano-electronics systems K Han, Y Wu, YC Huang, S Xu, A Kumar, E Kong, Y Kang, J Zhang, ... 2019 Symposium on VLSI Technology, T182-T183, 2019 | 12 | 2019 |
| Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High G m of 479.5 μS/μm (V DS of 1 V) and f T of 18.3 GHz (V DS of 3 V) C Wang, A Kumar, K Han, C Sun, H Xu, J Zhang, Y Kang, Q Kong, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 11 | 2022 |
| Time-dependent Landau-Ginzburg equation-based ferroelectric tunnel junction modeling with dynamic response and multi-domain characteristics Z Zhou, L Jiao, J Zhou, Q Kong, S Luo, C Sun, Z Zheng, X Wang, D Zhang, ... IEEE Electron Device Letters 43 (1), 158-161, 2021 | 11 | 2021 |
| Top-gate short channel amorphous indium-gallium-zinc-oxide thin film transistors with sub-1.2 nm equivalent oxide thickness K Han, S Samanta, C Sun, J Zhang, Z Zheng, X Gong 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 11 | 2021 |
| New insights into the impact of hydrogen evolution on the reliability of IGZO FETs: Experiment and modeling Q Kong, G Liu, C Sun, Z Zheng, D Zhang, J Zhang, H Xu, L Liu, Z Zhou, ... 2022 International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2022 | 10 | 2022 |
| Back-end-of-line compatible fully depleted CMOS inverters employing Ge p-FETs and α-InGaZnO n-FETs Y Kang, K Han, A Kumar, C Wang, C Sun, Z Zhou, J Zhou, X Gong IEEE Electron Device Letters 42 (10), 1488-1491, 2021 | 9 | 2021 |
| A Novel Fast-Turn-Around Ladder TLM Methodology with Parasitic Metal Resistance Elimination, and 2×10−10 Ω-cm2Resolution: Theoretical Design and … Y Wu, H Xu, LH Chua, K Han, W Zou, T Henry, J Zhang, C Wang, C Sun, ... 2019 Symposium on VLSI Technology, T150-T151, 2019 | 9 | 2019 |
| Hybrid design using metal–oxide–semiconductor field-effect transistors and negative-capacitance field-effect transistors for analog circuit applications K Han, C Sun, EYJ Kong, Y Wu, CH Heng, X Gong IEEE Transactions on Electron Devices 68 (2), 846-852, 2020 | 8 | 2020 |
| Boosting the memory window of the BEOL-compatible MFMIS ferroelectric/anti-ferroelectric FETs by charge injection Z Zheng, C Sun, L Jiao, D Zhang, Z Zhou, X Wang, G Liu, Q Kong, Y Chen, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 7 | 2022 |
