| Energetic molding of chiral magnetic bubbles D Lau, V Sundar, JG Zhu, V Sokalski Physical review B 94 (6), 060401, 2016 | 59 | 2016 |
| Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage D Shen, YJ Wang, RY Tong, V Sundar, S Patel US Patent 10,522,749, 2019 | 57 | 2019 |
| High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory JM Iwata-Harms, G Jan, H Liu, S Serrano-Guisan, J Zhu, L Thomas, ... Scientific reports 8 (1), 14409, 2018 | 50 | 2018 |
| Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ... 2018 IEEE Symposium on VLSI Technology, 65-66, 2018 | 34 | 2018 |
| Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory JM Iwata-Harms, G Jan, S Serrano-Guisan, L Thomas, H Liu, J Zhu, ... Scientific reports 9 (1), 19407, 2019 | 29 | 2019 |
| Basic principles, challenges and opportunities of stt-mram for embedded memory applications L Thomas MSST 2017, 2017 | 26 | 2017 |
| Novel scheme for producing nanoscale uniform grains based on templated two-phase growth V Sundar, J Zhu, DE Laughlin, JG Zhu Nano letters 14 (3), 1609-1613, 2014 | 20 | 2014 |
| Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) JM Iwata, G Jan, RY Tong, V Sundar, J Zhu, H Liu US Patent 10,665,773, 2020 | 19 | 2020 |
| STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes L Thomas, G Jan, S Serrano-Guisan, H Liu, J Zhu, YJ Lee, S Le, ... 2018 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2018 | 19 | 2018 |
| Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR L Thomas, G Jan, S Le, S Serrano-Guisan, YJ Lee, H Liu, J Zhu, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2017 | 15 | 2017 |
| Modeling of electrically controlled molecular diffusion in a nanofluidic channel S Kim, EI Ozalp, V Sundar, JG Zhu, JA Weldon Journal of Applied Physics 118 (7), 2015 | 15 | 2015 |
| Dual magnetic tunnel junction (DMTJ) stack design V Sundar, YJ Wang, L Thomas, G Jan, S Patel, RY Tong US Patent 10,797,225, 2020 | 12 | 2020 |
| Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) V Sundar, YJ Wang, L Thomas, G Jan US Patent 10,522,746, 2019 | 9 | 2019 |
| Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions S Patel, G Jan, RY Tong, V Sundar, D Shen, YJ Wang, PK Wang, H Liu US Patent 10,522,745, 2019 | 9 | 2019 |
| Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering S Patel, RY Tong, D Shen, YJ Wang, V Sundar US Patent 9,935,261, 2018 | 9 | 2018 |
| Silicon oxynitride based encapsulation layer for magnetic tunnel junctions V Sundar, YJ Wang, D Shen, S Patel, RY Tong US Patent 10,516,100, 2019 | 7 | 2019 |
| Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer H Fukuzawa, V Sundar, YJ Wang, RY Tong US Patent 10,622,047, 2020 | 6 | 2020 |
| Post treatment to reduce shunting devices for physical etching process YJ Wang, D Shen, V Sundar, S Patel US Patent 10,297,746, 2019 | 6 | 2019 |
| Multilayer structure for reducing film roughness in magnetic devices J Zhu, G Jan, YJ Lee, H Liu, RY Tong, JM Iwata, V Sundar, L Thomas, ... US Patent 10,115,892, 2018 | 6 | 2018 |
| Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-deposition Y Yang, D Shen, V Sundar, YJ Wang US Patent 10,868,237, 2020 | 5 | 2020 |
