| Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell IEEE Electron Device Letters 39 (4), 520-523, 2018 | 113 | 2018 |
| A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges M Monavarian, A Rashidi, D Feezell physica status solidi (a) 216 (1), 1800628, 2019 | 105 | 2019 |
| High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ... IEEE Photonics Technology Letters 29 (4), 2017 | 80 | 2017 |
| High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, O Okur, M Nami, ... CLEO: Science and Innovations 2017, paper STh1C.7, 2017 | 80 | 2017 |
| Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ... Applied Physics Letters 112 (4), 2018 | 70 | 2018 |
| Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ... Journal of Applied Physics 122 (3), 2017 | 61 | 2017 |
| Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ... Acs Photonics 6 (7), 1618-1625, 2019 | 56 | 2019 |
| Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ... Optics express 25 (16), 19343-19353, 2017 | 39 | 2017 |
| Trade-off between bandwidth and efficiency in semipolar (202 1) InGaN/GaN single-and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ... Applied Physics Letters 112 (19), 2018 | 33 | 2018 |
| Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements A Rashidi, M Monavarian, A Aragon, D Feezell Scientific Reports 9 (1), 19921, 2019 | 27 | 2019 |
| Two-dimensional topological insulator state in cadmium arsenide thin films AC Lygo, B Guo, A Rashidi, V Huang, P Cuadros-Romero, S Stemmer Physical Review Letters 130 (4), 046201, 2023 | 24 | 2023 |
| High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ... IEEE Photonics Technology Letters 32 (7), 383-386, 2020 | 15 | 2020 |
| Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar (202¯ 1¯) InGaN/GaN light-emitting diodes A Rashidi, M Monavarian, A Aragon, D Feezell Applied Physics Letters 113 (3), 2018 | 14 | 2018 |
| Reducing surface depletion of superconducting SrTiO3 films with EuTiO3 capping layers H Jeong, NG Combs, S Munyan, A Rashidi, S Stemmer Applied Physics Letters 119 (16), 2021 | 8 | 2021 |
| Anomalous superconducting diode effect in a polar superconductor R Kealhofer, H Jeong, A Rashidi, L Balents, S Stemmer Physical Review B 107 (10), L100504, 2023 | 7 | 2023 |
| Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes F Mirkhosravi, A Rashidi, J Gallagher, M Monavarian, A Aragon, K Ahn, ... AIP Advances 11 (2), 2021 | 6 | 2021 |
| GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition A Tarief Elshafiey, KM DaVico, AK Rishinaramangalam, A Rashidi, ... physica status solidi (a) 217 (7), 1900800, 2020 | 5 | 2020 |
| Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide A Rashidi, R Kealhofer, AC Lygo, V Huang, S Stemmer APL Materials 11 (4), 2023 | 4 | 2023 |
| Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes F Mirkhosravi, A Rashidi, AT Elshafiey, J Gallagher, Z Abedi, K Ahn, ... Journal of Applied Physics 133 (1), 2023 | 4 | 2023 |
| Nonpolar GaN-based superluminescent diode with 2.5 GHz modulation bandwidth AK Rishinaramangalam, A Rashidi, SMU Masabih, AA Aragon, ... 2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018 | 4 | 2018 |
Daniel FeezellUniversity of New Mexico在 unm.edu 的电子邮件经过验证
