受强制性开放获取政策约束的文章 - Arman Rashidi了解详情
无法在其他位置公开访问的文章：5 篇
Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth
A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell
IEEE Electron Device Letters 39 (4), 520-523, 2018
强制性开放获取政策： US Department of Defense
Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity
M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ...
Acs Photonics 6 (7), 1618-1625, 2019
强制性开放获取政策： US Department of Energy, US Department of Defense
Topological Semimetals for Electronic Devices
A Rashidi, OF Shoron, M Goyal, DA Kealhofer, S Stemmer
2021 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2021
强制性开放获取政策： US Department of Defense
GHz-bandwidth nonpolar InGaN/GaN micro-LED operating at low current density for visible-light communication
A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell
2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018
强制性开放获取政策： US Department of Defense
Carrier Dynamics in InGaN/GaN Micro-LEDs: An RF Appraoch to Understand Efficiency Issues
A Rashidi, M Monavarian, A Aragon, A Rishinaramangalam, D Feezell
2019 IEEE Photonics Conference (IPC), 1-2, 2019
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：21 篇
High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication
A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
IEEE Photonics Technology Letters 29 (4), 2017
强制性开放获取政策： US Department of Defense
Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes
M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ...
Applied Physics Letters 112 (4), 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes
A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 2017
强制性开放获取政策： US Department of Defense
Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients
M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ...
Optics express 25 (16), 19343-19353, 2017
强制性开放获取政策： US National Science Foundation, US Department of Defense
Two-dimensional topological insulator state in cadmium arsenide thin films
AC Lygo, B Guo, A Rashidi, V Huang, P Cuadros-Romero, S Stemmer
Physical Review Letters 130 (4), 046201, 2023
强制性开放获取政策： US National Science Foundation, US Department of Defense
Trade-off between bandwidth and efficiency in semipolar (202 1) InGaN/GaN single-and multiple-quantum-well light-emitting diodes
M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ...
Applied Physics Letters 112 (19), 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
A Rashidi, M Monavarian, A Aragon, D Feezell
Scientific Reports 9 (1), 19921, 2019
强制性开放获取政策： US Department of Defense
High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth
A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ...
IEEE Photonics Technology Letters 32 (7), 383-386, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy
Exclusion of injection efficiency as the primary cause of efficiency droop in semipolar (202¯ 1¯) InGaN/GaN light-emitting diodes
A Rashidi, M Monavarian, A Aragon, D Feezell
Applied Physics Letters 113 (3), 2018
强制性开放获取政策： US Department of Defense
Anomalous superconducting diode effect in a polar superconductor
R Kealhofer, H Jeong, A Rashidi, L Balents, S Stemmer
Physical Review B 107 (10), L100504, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy
Reducing surface depletion of superconducting SrTiO3 films with EuTiO3 capping layers
H Jeong, NG Combs, S Munyan, A Rashidi, S Stemmer
Applied Physics Letters 119 (16), 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes
F Mirkhosravi, A Rashidi, AT Elshafiey, J Gallagher, Z Abedi, K Ahn, ...
Journal of Applied Physics 133 (1), 2023
强制性开放获取政策： US Department of Energy, US Department of Defense
Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes
F Mirkhosravi, A Rashidi, J Gallagher, M Monavarian, A Aragon, K Ahn, ...
AIP Advances 11 (2), 2021
强制性开放获取政策： US Department of Energy, US Department of Defense
Edge channel transmission through a quantum point contact in the two-dimensional topological insulator cadmium arsenide
S Munyan, A Rashidi, AC Lygo, R Kealhofer, S Stemmer
Nano Letters 23 (12), 5648-5653, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Induced superconductivity in the two-dimensional topological insulator phase of cadmium arsenide
A Rashidi, R Kealhofer, AC Lygo, V Huang, S Stemmer
APL Materials 11 (4), 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
出版信息和资助信息由计算机程序自动确定