| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 168 | 2017 |
| Vertical GaN junction barrier Schottky diodes AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ... ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016 | 44 | 2016 |
| Ultra-broadband photodetectors based on epitaxial graphene quantum dots A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ... Nanophotonics 7 (4), 735-740, 2018 | 43 | 2018 |
| Microwave annealing of very high dose aluminum-implanted 4H-SiC R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian Applied Physics Express 4 (11), 111301, 2011 | 42 | 2011 |
| Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene KM Daniels, MM Jadidi, AB Sushkov, A Nath, AK Boyd, K Sridhara, ... 2D Materials 4 (2), 025034, 2017 | 41 | 2017 |
| Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ... Applied Physics Letters 104 (22), 2014 | 41 | 2014 |
| Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti 2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014 | 34 | 2014 |
| Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN CR English, VD Wheeler, NY Garces, N Nepal, A Nath, JK Hite, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 31 | 2014 |
| Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ... Applied Physics Express 10 (12), 126501, 2017 | 29 | 2017 |
| Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti Journal of Applied Physics 118 (3), 2015 | 29 | 2015 |
| Plasma-based chemical modification of epitaxial graphene with oxygen functionalities SC Hernández, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ... Surface and Coatings Technology 241, 8-12, 2014 | 28 | 2014 |
| Functionalized graphene as a model system for the two-dimensional metal-insulator transition MS Osofsky, SC Hernandez, A Nath, VD Wheeler, SG Walton, CM Krowne, ... Scientific Reports 6 (1), 19939, 2016 | 25 | 2016 |
| Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ... Journal of Vacuum Science & Technology A 35 (3), 2017 | 23 | 2017 |
| High-dose phosphorus-implanted 4H-SiC: Microwave and conventional post-implantation annealing at temperatures≥ 1700° C R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, MV Rao Journal of electronic materials 41, 457-465, 2012 | 23 | 2012 |
| Electrothermal evaluation of AlGaN/GaN membrane high electron mobility transistors by transient thermoreflectance MJ Tadjer, PE Raad, PL Komarov, KD Hobart, TI Feygelson, AD Koehler, ... IEEE Journal of the Electron Devices Society 6, 922-930, 2018 | 20 | 2018 |
| High voltage GaN lateral photoconductive semiconductor switches AD Koehler, TJ Anderson, A Khachatrian, A Nath, MJ Tadjer, SP Buchner, ... ECS Journal of Solid State Science and Technology 6 (11), S3099, 2017 | 18 | 2017 |
| In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface A Nath, M Currie, AK Boyd, VD Wheeler, AD Koehler, MJ Tadjer, ... 2D Materials 3 (2), 025013, 2016 | 18 | 2016 |
| Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ... ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017 | 16 | 2017 |
| Challenges to graphene growth on SiC (0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient ZR Robinson, GG Jernigan, M Currie, JK Hite, KM Bussmann, LO Nyakiti, ... Carbon 81, 73-82, 2015 | 16 | 2015 |
| Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride K Sridhara, BN Feigelson, JA Wollmershauser, JK Hite, A Nath, ... Crystal Growth & Design 17 (4), 1669-1678, 2017 | 13 | 2017 |
Mulpuri V RaoGeorge Mason University在 gmu.edu 的电子邮件经过验证
