| Ferroelectricity in Simple Binary ZrO2 and HfO2 J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ... Nano letters 12 (8), 4318-4323, 2012 | 1621 | 2012 |
| Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012 | 807 | 2012 |
| Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30, 2015 | 508 | 2015 |
| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 483 | 2017 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 382 | 2016 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 symposium on VLSI technology (VLSIT), 25-26, 2012 | 308 | 2012 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 307 | 2017 |
| Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories E Yurchuk, J Müller, S Müller, J Paul, M Pešić, R van Bentum, ... IEEE Transactions on Electron Devices 63 (9), 3501-3507, 2016 | 286 | 2016 |
| Ferroelectricity in Gd-doped HfO2 thin films S Mueller, C Adelmann, A Singh, S Van Elshocht, U Schroeder, ... ECS Journal of Solid State Science and Technology 1 (6), N123, 2012 | 286 | 2012 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 251 | 2017 |
| About the deformation of ferroelectric hystereses T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ... Applied physics reviews 1 (4), 2014 | 209 | 2014 |
| Reliability Characteristics of Ferroelectric Thin Films for Memory Applications S Mueller, J Muller, U Schroeder, T Mikolajick IEEE Transactions on Device and Materials Reliability 13 (1), 93-97, 2012 | 207 | 2012 |
| Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties T Olsen, U Schröder, S Müller, A Krause, D Martin, A Singh, J Müller, ... Applied Physics Letters 101 (8), 2012 | 200 | 2012 |
| Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric. D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ... Advanced Materials (Deerfield Beach, Fla.) 26 (48), 8198-8202, 2014 | 183 | 2014 |
| Ten-Nanometer Ferroelectric Films for Next-Generation FRAM Capacitors S Mueller, SR Summerfelt, J Muller, U Schroeder, T Mikolajick IEEE Electron Device Letters 33 (9), 1300-1302, 2012 | 165 | 2012 |
| From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices S Mueller, J Müller, R Hoffmann, E Yurchuk, T Schlösser, R Boschke, ... IEEE transactions on electron devices 60 (12), 4199-4205, 2013 | 151 | 2013 |
| Hafnium oxide based CMOS compatible ferroelectric materials U Schroeder, S Mueller, J Mueller, E Yurchuk, D Martin, C Adelmann, ... ECS Journal of Solid State Science and Technology 2 (4), N69, 2013 | 141 | 2013 |
| Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories T Schenk, S Mueller, U Schroeder, R Materlik, A Kersch, M Popovici, ... 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 125 | 2013 |
| Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories E Yurchuk, S Mueller, D Martin, S Slesazeck, U Schroeder, T Mikolajick, ... 2014 IEEE International Reliability Physics Symposium, 2E. 5.1-2E. 5.5, 2014 | 121 | 2014 |
| High endurance strategies for hafnium oxide based ferroelectric field effect transistor J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ... 2016 16th non-volatile memory technology symposium (NVMTS), 1-7, 2016 | 97 | 2016 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden在 namlab.com 的电子邮件经过验证
