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Shraddha Pali
Shraddha Pali
在 iitd.ac.in 的电子邮件经过验证
标题
引用次数
引用次数
年份
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5nm Node Junctionless Multi-Nanowire FETs
N Kumar, S Pali, A Gupta, P Singh
IEEE Transactions on Device and Materials Reliability, 2023
42023
Design of Drain-Extended MOS Devices Using RESURF Techniques for High Switching Performance and Avalanche Reliability
S Pali, A Gupta
IEEE Access 9, 155370-155379, 2021
42021
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions
S Pali, N Kumar, A Gupta
IEEE Transactions on Device and Materials Reliability 23 (1), 134-141, 2023
22023
Drain-extended MOS design using High-k dielectric to control off-state BTBT with enhanced switching performance
S Pali, PK Kaushik, A Gupta
Engineering Research Express 4 (3), 035011, 2022
22022
High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications
S Pali, A Gupta
Microelectronics Journal 130, 105615, 2022
12022
Physical Insights on Current Dynamics of RESURF DeMOS Designed for High-Frequency CMOS Level Shifter Application
S Pali, A Gupta
IETE Technical Review 40 (5), 611-620, 2023
2023
P-type trench gate based drain-extended N-type MOS design for high unclamped inductive switching reliability
S Pali, N Kumar, A Gupta
Microelectronics Journal 139, 105894, 2023
2023
Design and analysis of drain-extended MOS (DeMOS) for improved switching performance and electrothermal switching reliability
S Pali
IIT Delhi, 2023
2023
Optimization of Drain Extended MOS Devices for Reliability in High Switching applications
S Pali, A Gupta
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
2020
Drain-extended NMOS(DeNMOS) and a method thereof to optimize parasitic BJT trigger voltage and self-heating induced thermal runaway
IN Patent App. 202,211,037,982, 0
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