| Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors RE Stahlbush, AH Edwards, DL Griscom, BJ Mrstik Journal of applied physics 73 (2), 658-667, 1993 | 212 | 1993 |
| Bias‐dependent etching of silicon in aqueous KOH OJ Glembocki, RE Stahlbush, M Tomkiewicz Journal of the Electrochemical Society 132 (1), 145, 1985 | 188 | 1985 |
| Interface states induced by the presence of trapped holes near the silicon–silicon‐dioxide interface DJ DiMaria, DA Buchanan, JH Stathis, RE Stahlbush Journal of applied physics 77 (5), 2032-2040, 1995 | 114 | 1995 |
| Post-irradiation behavior of the interface state density and the trapped positive charge RE Stahlbush, BJ Mrstik, RK Lawrence IEEE Transactions on Nuclear Science 37 (6), 1641-1649, 1990 | 114 | 1990 |
| Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions RE Stahlbush, BL VanMil, RL Myers-Ward, KK Lew, DK Gaskill, CR Eddy Applied Physics Letters 94 (4), 2009 | 108 | 2009 |
| Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides RE Stahlbush, GJ Campisi, JB McKitterick, WP Maszara, P Roitman, ... IEEE transactions on nuclear science 39 (6), 2086-2097, 1992 | 106 | 1992 |
| On the driving force for recombination-induced stacking fault motion in 4H–SiC JD Caldwell, RE Stahlbush, MG Ancona, OJ Glembocki, KD Hobart Journal of Applied Physics 108 (4), 2010 | 99 | 2010 |
| Stacking-fault formation and propagation in 4H-SiC PiN diodes RE Stahlbush, M Fatemi, JB Fedison, SD Arthur, LB Rowland, S Wang Journal of electronic materials 31, 370-375, 2002 | 94 | 2002 |
| X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates M Fatemi, RE Stahlbush Applied physics letters 58 (8), 825-827, 1991 | 94 | 1991 |
| Glide and multiplication of basal plane dislocations during 4H‐SiC homoepitaxy X Zhang, M Skowronski, KX Liu, RE Stahlbush, JJ Sumakeris, MJ Paisley, ... Journal of Applied Physics 102 (9), 2007 | 85 | 2007 |
| Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy PE Thompson, JL Davis, J Waterman, RJ Wagner, D Gammon, DK Gaskill, ... Journal of applied physics 69 (10), 7166-7172, 1991 | 83 | 1991 |
| Turning of basal plane dislocations during epitaxial growth on 4 off-axis 4H-SiC RL Myers-Ward, BL VanMil, RE Stahlbush, SL Katz, JM McCrate, SA Kitt, ... Materials Science Forum 615, 105-108, 2009 | 79 | 2009 |
| Structure of stacking faults formed during the forward bias of diodes ME Twigg, RE Stahlbush, M Fatemi, SD Arthur, JB Fedison, JB Tucker, ... Applied physics letters 82 (15), 2410-2412, 2003 | 74 | 2003 |
| Whole-wafer mapping of dislocations in 4H-SiC epitaxy RE Stahlbush, KX Liu, Q Zhang, JJ Sumakeris Materials science forum 556, 295-298, 2007 | 70 | 2007 |
| Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers NA Mahadik, RE Stahlbush, MG Ancona, EA Imhoff, KD Hobart, ... Applied Physics Letters 100 (4), 2012 | 69 | 2012 |
| Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes JD Caldwell, RE Stahlbush, EA Imhoff, KD Hobart, MJ Tadjer, Q Zhang, ... Journal of Applied Physics 106 (4), 2009 | 69 | 2009 |
| Effect of oxidation and reoxidation on the oxide-substrate interface of 4H-and 6H-SiC GG Jernigan, RE Stahlbush, NS Saks Applied Physics Letters 77 (10), 1437-1439, 2000 | 66 | 2000 |
| Anomalous positive charge formation by atomic hydrogen exposure RE Stahlbush, E Cartier, DA Buchanan Microelectronic Engineering 28 (1-4), 15-18, 1995 | 62 | 1995 |
| Basal plane dislocation reduction for 8 off-cut, 4H-SiC using in situ variable temperature growth interruptions BL VanMil, RE Stahlbush, RL Myers-Ward, KK Lew, CR Eddy, DK Gaskill Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 56 | 2008 |
| Interfacial differences between SiO2 grown on 6H-SiC and on Si (100) GG Jernigan, RE Stahlbush, MK Das, JA Cooper, LA Lipkin Applied physics letters 74 (10), 1448-1450, 1999 | 56 | 1999 |
